DE60108078D1 - Heizungsanlage und Verfahren zur Heizung für einen Reaktor - Google Patents

Heizungsanlage und Verfahren zur Heizung für einen Reaktor

Info

Publication number
DE60108078D1
DE60108078D1 DE60108078T DE60108078T DE60108078D1 DE 60108078 D1 DE60108078 D1 DE 60108078D1 DE 60108078 T DE60108078 T DE 60108078T DE 60108078 T DE60108078 T DE 60108078T DE 60108078 D1 DE60108078 D1 DE 60108078D1
Authority
DE
Germany
Prior art keywords
heating
reactor
heating system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60108078T
Other languages
English (en)
Other versions
DE60108078T2 (de
Inventor
Henry Bernhardt
Michael Stadtmueller
Thomas Seidemann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies SC300 GmbH and Co KG
Aviza Technology Inc
Original Assignee
Infineon Technologies SC300 GmbH and Co KG
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies SC300 GmbH and Co KG, ASML Netherlands BV filed Critical Infineon Technologies SC300 GmbH and Co KG
Application granted granted Critical
Publication of DE60108078D1 publication Critical patent/DE60108078D1/de
Publication of DE60108078T2 publication Critical patent/DE60108078T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
DE60108078T 2001-04-12 2001-04-12 Heizungsanlage und Verfahren zur Heizung für einen Reaktor Expired - Fee Related DE60108078T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01109164A EP1256973B1 (de) 2001-04-12 2001-04-12 Heizungsanlage und Verfahren zur Heizung für einen Reaktor

Publications (2)

Publication Number Publication Date
DE60108078D1 true DE60108078D1 (de) 2005-02-03
DE60108078T2 DE60108078T2 (de) 2005-12-01

Family

ID=8177130

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60108078T Expired - Fee Related DE60108078T2 (de) 2001-04-12 2001-04-12 Heizungsanlage und Verfahren zur Heizung für einen Reaktor

Country Status (8)

Country Link
US (1) US6802712B2 (de)
EP (1) EP1256973B1 (de)
JP (1) JP2004529497A (de)
KR (1) KR100561120B1 (de)
CN (1) CN1288713C (de)
DE (1) DE60108078T2 (de)
TW (1) TW541576B (de)
WO (1) WO2002084711A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
FR2847714B1 (fr) 2002-11-27 2005-02-18 Soitec Silicon On Insulator Procede et dispositif de recuit de tranche de semiconducteur
FR2858715B1 (fr) 2003-08-04 2005-12-30 Soitec Silicon On Insulator Procede de detachement de couche de semiconducteur
US8053324B2 (en) * 2007-08-01 2011-11-08 Texas Instruments Incorporated Method of manufacturing a semiconductor device having improved transistor performance
CN102969220A (zh) * 2011-09-02 2013-03-13 上海华虹Nec电子有限公司 使用炉管进行工艺加工的方法
US10741426B2 (en) * 2017-09-27 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for controlling temperature of furnace in semiconductor fabrication process
TWI750749B (zh) * 2020-07-28 2021-12-21 華邦電子股份有限公司 化學氣相沉積製程及膜層的形成方法
CN114308947A (zh) * 2020-09-30 2022-04-12 中国科学院微电子研究所 多晶硅生产设备的清洗方法、清洗装置及多晶硅生产设备
CN112941489A (zh) * 2021-01-27 2021-06-11 长鑫存储技术有限公司 薄膜沉积方法以及薄膜沉积装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960001160B1 (ko) * 1987-07-31 1996-01-19 도오교오 에레구토론 가부시끼가이샤 가열로(加熱爐)
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
US5775889A (en) * 1994-05-17 1998-07-07 Tokyo Electron Limited Heat treatment process for preventing slips in semiconductor wafers
EP1093664A4 (de) * 1998-05-11 2003-07-09 Semitool Inc Temperaturkontrollsystem für thermoreaktor
ATE279784T1 (de) * 1998-12-17 2004-10-15 Vishay Semiconductor Itzehoe G Verfahren zur bor-dotierung von wafern unter einsatz eines vertikalofensystems
EP1187188A4 (de) * 2000-02-18 2004-05-26 Tokyo Electron Ltd Waferverarbeitungsverfahren
US6495805B2 (en) * 2000-06-30 2002-12-17 Tokyo Electron Limited Method of determining set temperature trajectory for heat treatment system
US6572371B1 (en) * 2002-05-06 2003-06-03 Messier-Bugatti Gas preheater and process for controlling distribution of preheated reactive gas in a CVI furnace for densification of porous annular substrates

Also Published As

Publication number Publication date
CN1559079A (zh) 2004-12-29
KR100561120B1 (ko) 2006-03-15
EP1256973B1 (de) 2004-12-29
EP1256973A1 (de) 2002-11-13
CN1288713C (zh) 2006-12-06
DE60108078T2 (de) 2005-12-01
KR20040018352A (ko) 2004-03-03
US6802712B2 (en) 2004-10-12
JP2004529497A (ja) 2004-09-24
WO2002084711A1 (en) 2002-10-24
TW541576B (en) 2003-07-11
US20040157183A1 (en) 2004-08-12

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: INFINEON TECHNOLOGIES SC300 GMBH & CO. OHG, 01099

Owner name: AVIZA TECHNOLOGY, INC., SCOTTS VALLEY, CALIF., US

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee