KR100557695B1 - 다공성 영역들을 갖는 정전기 척 - Google Patents

다공성 영역들을 갖는 정전기 척 Download PDF

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Publication number
KR100557695B1
KR100557695B1 KR1020037003208A KR20037003208A KR100557695B1 KR 100557695 B1 KR100557695 B1 KR 100557695B1 KR 1020037003208 A KR1020037003208 A KR 1020037003208A KR 20037003208 A KR20037003208 A KR 20037003208A KR 100557695 B1 KR100557695 B1 KR 100557695B1
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KR
South Korea
Prior art keywords
delete delete
chuck
porous
electrostatic chuck
porous region
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Expired - Lifetime
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KR1020037003208A
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English (en)
Korean (ko)
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KR20030031177A (ko
Inventor
라메쉬 디바카
Original Assignee
생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
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Publication of KR20030031177A publication Critical patent/KR20030031177A/ko
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Publication of KR100557695B1 publication Critical patent/KR100557695B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Holding Or Fastening Of Disk On Rotational Shaft (AREA)
KR1020037003208A 2000-09-05 2001-08-01 다공성 영역들을 갖는 정전기 척 Expired - Lifetime KR100557695B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/655,324 US6606234B1 (en) 2000-09-05 2000-09-05 Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
US09/655,324 2000-09-05
PCT/US2001/024135 WO2002021590A2 (en) 2000-09-05 2001-08-01 Electrostatic chuck with porous regions

Publications (2)

Publication Number Publication Date
KR20030031177A KR20030031177A (ko) 2003-04-18
KR100557695B1 true KR100557695B1 (ko) 2006-03-07

Family

ID=24628428

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037003208A Expired - Lifetime KR100557695B1 (ko) 2000-09-05 2001-08-01 다공성 영역들을 갖는 정전기 척

Country Status (9)

Country Link
US (1) US6606234B1 (enExample)
EP (1) EP1316110B1 (enExample)
JP (1) JP4959905B2 (enExample)
KR (1) KR100557695B1 (enExample)
AT (1) ATE417358T1 (enExample)
AU (1) AU2001277237A1 (enExample)
DE (1) DE60136940D1 (enExample)
TW (1) TW526521B (enExample)
WO (1) WO2002021590A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858780B1 (ko) * 2004-12-01 2008-09-17 가부시끼가이샤 퓨처 비전 피처리 기판의 표면 처리 장치
KR20190073900A (ko) * 2017-12-19 2019-06-27 한국세라믹기술원 정전척용 세라믹 본체

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7988999B2 (en) * 2000-12-07 2011-08-02 Nycomed Gmbh Pharmaceutical preparation in the form of a paste comprising an acid-labile active ingredient
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6490145B1 (en) * 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
US20030219986A1 (en) * 2002-05-22 2003-11-27 Applied Materials, Inc. Substrate carrier for processing substrates
KR100457833B1 (ko) * 2002-05-24 2004-11-18 주성엔지니어링(주) 플라즈마 식각 장치
JP4095842B2 (ja) * 2002-06-26 2008-06-04 日本特殊陶業株式会社 静電チャック
JP2004306191A (ja) * 2003-04-07 2004-11-04 Seiko Epson Corp テーブル装置、成膜装置、光学素子、半導体素子及び電子機器
DE102004060625A1 (de) * 2004-12-16 2006-06-29 Siltronic Ag Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe
US7235139B2 (en) * 2003-10-28 2007-06-26 Veeco Instruments Inc. Wafer carrier for growing GaN wafers
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US20060023395A1 (en) * 2004-07-30 2006-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for temperature control of semiconductor wafers
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7731798B2 (en) * 2004-12-01 2010-06-08 Ultratech, Inc. Heated chuck for laser thermal processing
WO2006088448A1 (en) * 2005-02-16 2006-08-24 Veeco Instruments Inc. Wafer carrier for growing gan wafers
US20090016941A1 (en) * 2006-01-11 2009-01-15 Ngk Insulators Ltd. Electrode Device For Plasma Discharge
US20080009417A1 (en) * 2006-07-05 2008-01-10 General Electric Company Coating composition, article, and associated method
WO2008082978A2 (en) * 2006-12-26 2008-07-10 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
US7848076B2 (en) * 2007-07-31 2010-12-07 Applied Materials, Inc. Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US9202736B2 (en) * 2007-07-31 2015-12-01 Applied Materials, Inc. Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
US8108981B2 (en) * 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
JP2008172255A (ja) * 2008-01-25 2008-07-24 Ngk Spark Plug Co Ltd 静電チャック
US8681472B2 (en) * 2008-06-20 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Platen ground pin for connecting substrate to ground
US8218284B2 (en) * 2008-07-24 2012-07-10 Hermes-Microvision, Inc. Apparatus for increasing electric conductivity to a semiconductor wafer substrate when exposure to electron beam
US8094428B2 (en) * 2008-10-27 2012-01-10 Hermes-Microvision, Inc. Wafer grounding methodology
US20100107974A1 (en) * 2008-11-06 2010-05-06 Asm America, Inc. Substrate holder with varying density
US9218997B2 (en) * 2008-11-06 2015-12-22 Applied Materials, Inc. Electrostatic chuck having reduced arcing
US20100177454A1 (en) * 2009-01-09 2010-07-15 Component Re-Engineering Company, Inc. Electrostatic chuck with dielectric inserts
US20110024049A1 (en) 2009-07-30 2011-02-03 c/o Lam Research Corporation Light-up prevention in electrostatic chucks
US9338871B2 (en) * 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) * 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8608852B2 (en) 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US8906164B2 (en) 2010-08-05 2014-12-09 Lam Research Corporation Methods for stabilizing contact surfaces of electrostatic chucks
JP5458050B2 (ja) 2011-03-30 2014-04-02 日本碍子株式会社 静電チャックの製法
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5956379B2 (ja) * 2012-04-27 2016-07-27 日本碍子株式会社 半導体製造装置用部材
KR102032744B1 (ko) 2012-09-05 2019-11-11 삼성디스플레이 주식회사 기판 고정장치 및 이의 제조방법
CN104748574A (zh) * 2013-12-27 2015-07-01 北京思能达节能电气股份有限公司 一种用于监测自焙电极焙烧状态的系统和方法
US9976211B2 (en) * 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
CN107004626B (zh) * 2014-11-20 2019-02-05 住友大阪水泥股份有限公司 静电卡盘装置
WO2016135565A1 (en) 2015-02-23 2016-09-01 M Cubed Technologies, Inc. Film electrode for electrostatic chuck
JP6722518B2 (ja) 2016-06-09 2020-07-15 新光電気工業株式会社 焼結体及びその製造方法と静電チャック
JP6854600B2 (ja) * 2016-07-15 2021-04-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および基板載置台
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
US10975469B2 (en) * 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
JP2019029384A (ja) * 2017-07-25 2019-02-21 新光電気工業株式会社 セラミックス混合物、多孔質体及びその製造方法、静電チャック及びその製造方法、基板固定装置
WO2019065233A1 (ja) * 2017-09-29 2019-04-04 住友大阪セメント株式会社 静電チャック装置
US10411380B1 (en) 2018-05-24 2019-09-10 Microsoft Technology Licensing, Llc Connectors with liquid metal and gas permeable plugs
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
CN111668148B (zh) * 2019-03-05 2024-09-03 Toto株式会社 静电吸盘及处理装置
JP7345379B2 (ja) * 2019-12-06 2023-09-15 株式会社ディスコ ゲッタリング性評価装置
JP7634644B2 (ja) * 2021-02-17 2025-02-21 アプライド マテリアルズ インコーポレイテッド 多孔性プラグ結合
US11794296B2 (en) * 2022-02-03 2023-10-24 Applied Materials, Inc. Electrostatic chuck with porous plug
CN119404302A (zh) 2022-07-07 2025-02-07 日本特殊陶业株式会社 保持装置
CN119968703A (zh) * 2022-09-30 2025-05-09 应用材料公司 用于氩气输送的大直径多孔栓塞及两阶段软性夹持方法
US20240158308A1 (en) * 2022-11-11 2024-05-16 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same
KR20250126049A (ko) * 2022-12-21 2025-08-22 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 정전 척
KR102795089B1 (ko) * 2022-12-28 2025-04-15 세메스 주식회사 서셉터 및 그 제조방법
KR20250068704A (ko) 2023-04-19 2025-05-16 니혼도꾸슈도교 가부시키가이샤 유지 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155517A (ja) * 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JPH0917770A (ja) * 1995-06-28 1997-01-17 Sony Corp プラズマ処理方法およびこれに用いるプラズマ装置
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US6399143B1 (en) 1996-04-09 2002-06-04 Delsys Pharmaceutical Corporation Method for clamping and electrostatically coating a substrate
JPH09289201A (ja) * 1996-04-23 1997-11-04 Tokyo Electron Ltd プラズマ処理装置
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US6004752A (en) * 1997-07-29 1999-12-21 Sarnoff Corporation Solid support with attached molecules
US6045753A (en) * 1997-07-29 2000-04-04 Sarnoff Corporation Deposited reagents for chemical processes
JPH11260899A (ja) * 1998-03-10 1999-09-24 Nippon Steel Corp 静電チャック
JP2001308075A (ja) * 2000-04-26 2001-11-02 Toshiba Ceramics Co Ltd ウェーハ支持体

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858780B1 (ko) * 2004-12-01 2008-09-17 가부시끼가이샤 퓨처 비전 피처리 기판의 표면 처리 장치
KR20190073900A (ko) * 2017-12-19 2019-06-27 한국세라믹기술원 정전척용 세라믹 본체
KR102039802B1 (ko) * 2017-12-19 2019-11-26 한국세라믹기술원 정전척용 세라믹 본체

Also Published As

Publication number Publication date
JP2004508728A (ja) 2004-03-18
JP4959905B2 (ja) 2012-06-27
EP1316110B1 (en) 2008-12-10
DE60136940D1 (de) 2009-01-22
WO2002021590A2 (en) 2002-03-14
AU2001277237A1 (en) 2002-03-22
KR20030031177A (ko) 2003-04-18
WO2002021590A3 (en) 2002-08-01
TW526521B (en) 2003-04-01
EP1316110A2 (en) 2003-06-04
ATE417358T1 (de) 2008-12-15
US6606234B1 (en) 2003-08-12

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