KR100540314B1 - 광학 검사 모듈, 및 통합 처리 도구 내에서 기판 상의 입자 및 결함을 검출하기 위한 방법 - Google Patents

광학 검사 모듈, 및 통합 처리 도구 내에서 기판 상의 입자 및 결함을 검출하기 위한 방법 Download PDF

Info

Publication number
KR100540314B1
KR100540314B1 KR1019997008951A KR19997008951A KR100540314B1 KR 100540314 B1 KR100540314 B1 KR 100540314B1 KR 1019997008951 A KR1019997008951 A KR 1019997008951A KR 19997008951 A KR19997008951 A KR 19997008951A KR 100540314 B1 KR100540314 B1 KR 100540314B1
Authority
KR
South Korea
Prior art keywords
substrate
inspection
pixels
light beam
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019997008951A
Other languages
English (en)
Korean (ko)
Other versions
KR20010005875A (ko
Inventor
키니패트릭디
라오나가라자피
Original Assignee
마이크로썸, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마이크로썸, 엘엘씨 filed Critical 마이크로썸, 엘엘씨
Publication of KR20010005875A publication Critical patent/KR20010005875A/ko
Application granted granted Critical
Publication of KR100540314B1 publication Critical patent/KR100540314B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Image Input (AREA)
  • Image Processing (AREA)
KR1019997008951A 1997-03-31 1998-03-30 광학 검사 모듈, 및 통합 처리 도구 내에서 기판 상의 입자 및 결함을 검출하기 위한 방법 Expired - Fee Related KR100540314B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4220297P 1997-03-31 1997-03-31
US60/042,202 1997-03-31
PCT/US1998/006222 WO1998044330A2 (en) 1997-03-31 1998-03-30 Optical inspection module and method for detecting particles and defects on substrates in integrated process tools

Publications (2)

Publication Number Publication Date
KR20010005875A KR20010005875A (ko) 2001-01-15
KR100540314B1 true KR100540314B1 (ko) 2006-01-10

Family

ID=21920611

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997008951A Expired - Fee Related KR100540314B1 (ko) 1997-03-31 1998-03-30 광학 검사 모듈, 및 통합 처리 도구 내에서 기판 상의 입자 및 결함을 검출하기 위한 방법

Country Status (6)

Country Link
US (1) US5909276A (https=)
EP (1) EP1016126B1 (https=)
JP (1) JP4527205B2 (https=)
KR (1) KR100540314B1 (https=)
AU (1) AU6942998A (https=)
WO (1) WO1998044330A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101020046B1 (ko) 2008-08-22 2011-03-09 주식회사 티엔텍 기판 표면 검사장치
KR101302710B1 (ko) * 2005-03-18 2013-09-03 덴마크스 텍니스케 유니버시테트 복수의 광 트랩을 사용하는 광 조작 시스템

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985680A (en) * 1997-08-08 1999-11-16 Applied Materials, Inc. Method and apparatus for transforming a substrate coordinate system into a wafer analysis tool coordinate system
US6897957B2 (en) 2001-03-26 2005-05-24 Candela Instruments Material independent optical profilometer
US6930765B2 (en) * 2001-03-26 2005-08-16 Kla-Tencor Technologies Multiple spot size optical profilometer, ellipsometer, reflectometer and scatterometer
US6665078B1 (en) * 1997-09-22 2003-12-16 Candela Instruments System and method for simultaneously measuring thin film layer thickness, reflectivity, roughness, surface profile and magnetic pattern in thin film magnetic disks and silicon wafers
US7123357B2 (en) 1997-09-22 2006-10-17 Candela Instruments Method of detecting and classifying scratches and particles on thin film disks or wafers
US6909500B2 (en) * 2001-03-26 2005-06-21 Candela Instruments Method of detecting and classifying scratches, particles and pits on thin film disks or wafers
US6757056B1 (en) * 2001-03-26 2004-06-29 Candela Instruments Combined high speed optical profilometer and ellipsometer
US6031615A (en) * 1997-09-22 2000-02-29 Candela Instruments System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness
JP3867402B2 (ja) * 1998-05-29 2007-01-10 株式会社日立製作所 半導体デバイス検査分析方法
US6424733B2 (en) * 1998-07-20 2002-07-23 Micron Technology, Inc. Method and apparatus for inspecting wafers
US6535628B2 (en) * 1998-10-15 2003-03-18 Applied Materials, Inc. Detection of wafer fragments in a wafer processing apparatus
JP2002529697A (ja) * 1998-10-29 2002-09-10 アプライド マテリアルズ インコーポレイテッド 欠陥検出の方法及び装置
US7177019B2 (en) * 1999-02-01 2007-02-13 Tokyo Electron Limited Apparatus for imaging metrology
US6091493A (en) * 1999-03-30 2000-07-18 Scatter Works, Inc. Process for particle size measurement
US6548821B1 (en) 1999-06-21 2003-04-15 Komag, Inc. Method and apparatus for inspecting substrates
US6566674B1 (en) 1999-06-21 2003-05-20 Komag, Inc. Method and apparatus for inspecting substrates
US7061601B2 (en) * 1999-07-02 2006-06-13 Kla-Tencor Technologies Corporation System and method for double sided optical inspection of thin film disks or wafers
US6274478B1 (en) 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6573173B2 (en) 1999-07-13 2003-06-03 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6721045B1 (en) 1999-09-07 2004-04-13 Applied Materials, Inc. Method and apparatus to provide embedded substrate process monitoring through consolidation of multiple process inspection techniques
US6813032B1 (en) 1999-09-07 2004-11-02 Applied Materials, Inc. Method and apparatus for enhanced embedded substrate inspection through process data collection and substrate imaging techniques
US6630995B1 (en) 1999-09-07 2003-10-07 Applied Materials, Inc. Method and apparatus for embedded substrate and system status monitoring
US6693708B1 (en) 1999-09-07 2004-02-17 Applied Materials, Inc. Method and apparatus for substrate surface inspection using spectral profiling techniques
US6707545B1 (en) * 1999-09-07 2004-03-16 Applied Materials, Inc. Optical signal routing method and apparatus providing multiple inspection collection points on semiconductor manufacturing systems
US7012684B1 (en) 1999-09-07 2006-03-14 Applied Materials, Inc. Method and apparatus to provide for automated process verification and hierarchical substrate examination
US6707544B1 (en) 1999-09-07 2004-03-16 Applied Materials, Inc. Particle detection and embedded vision system to enhance substrate yield and throughput
JP4312910B2 (ja) * 1999-12-02 2009-08-12 株式会社日立製作所 レビューｓｅｍ
JP2001291054A (ja) * 2000-04-07 2001-10-19 Nec Corp 半導体ウエハのｉｄ認識装置及びｉｄ認識ソータシステム
US6620631B1 (en) 2000-05-18 2003-09-16 Taiwan Semiconductor Manufacturing Co., Ltd Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control
US6490032B1 (en) * 2000-05-31 2002-12-03 Newport Fab, Llc Method and apparatus for improving a dark field inspection environment
US6392745B1 (en) * 2000-06-13 2002-05-21 American Air Liquide, Inc. Method and apparatus for the fast detection of surface characteristics
US20020018217A1 (en) * 2000-08-11 2002-02-14 Michael Weber-Grabau Optical critical dimension metrology system integrated into semiconductor wafer process tool
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6919957B2 (en) * 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US6633831B2 (en) * 2000-09-20 2003-10-14 Kla Tencor Technologies Methods and systems for determining a critical dimension and a thin film characteristic of a specimen
US6809809B2 (en) * 2000-11-15 2004-10-26 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
AU2002219847A1 (en) 2000-11-15 2002-05-27 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
KR20020053621A (ko) * 2000-12-27 2002-07-05 이 창 세 웨이퍼 표면의 미세 결함 측정 장치
US6696362B2 (en) * 2001-02-08 2004-02-24 Applied Materials Inc. Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
US7027165B2 (en) * 2001-04-06 2006-04-11 Akzo Nobel N.V. Method and device for surface evaluation
BR0208660A (pt) * 2001-04-06 2004-03-09 Akzo Nobel Coatings Int Bv Método e dispositivo para avaliação de superfìcie
US6999164B2 (en) * 2001-04-26 2006-02-14 Tokyo Electron Limited Measurement system cluster
EP1258915A1 (en) 2001-05-17 2002-11-20 Infineon Technologies SC300 GmbH & Co. KG Method of detecting defects on a semiconductor device in a processing tool and an arrangement therefore
US20020196336A1 (en) * 2001-06-19 2002-12-26 Applied Materials, Inc. Method and apparatus for substrate imaging
ATE423975T1 (de) 2001-08-03 2009-03-15 Nanosphere Inc Nanopartikelabbildungssystem und -verfahren
IL144806A (en) * 2001-08-08 2005-11-20 Nova Measuring Instr Ltd Method and apparatus for process control in semiconductor manufacturing
WO2003021642A2 (en) * 2001-08-31 2003-03-13 Applied Materials, Inc. Method and apparatus for processing a wafer
US20030045098A1 (en) * 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
WO2003021231A2 (en) * 2001-09-05 2003-03-13 Genicon Sciences Corporation Method and apparatus for normalization and deconvolution of assay data
JP4067799B2 (ja) * 2001-09-07 2008-03-26 日立オムロンターミナルソリューションズ株式会社 画像認識装置およびそれに用いるスタンド型イメージスキャナ
US7049586B2 (en) * 2002-02-21 2006-05-23 Applied Material Israel, Ltd. Multi beam scanning with bright/dark field imaging
US6899765B2 (en) * 2002-03-29 2005-05-31 Applied Materials Israel, Ltd. Chamber elements defining a movable internal chamber
US6645782B1 (en) * 2002-04-25 2003-11-11 Advanced Micro Devices, Inc. Qualitative method for troubleshooting a dielectric tool
US6862491B2 (en) * 2002-05-22 2005-03-01 Applied Materials Israel, Ltd. System and method for process variation monitor
CN1282942C (zh) * 2002-07-26 2006-11-01 松下电工株式会社 用于外表检测的图像处理方法
AU2003255332A1 (en) * 2002-07-30 2004-02-23 Steinbeis-Transferzentrum Analytische Elektronenmikroskopie, Biomedizin, Biotechnologie-Heidelberg Method and apparatus for multiple labeling detection and evaluation of a plurality of particles
US7042564B2 (en) * 2002-08-08 2006-05-09 Applied Materials, Israel, Ltd. Wafer inspection methods and an optical inspection tool
US6902647B2 (en) * 2002-08-29 2005-06-07 Asm International N.V. Method of processing substrates with integrated weighing steps
WO2004031753A1 (en) * 2002-09-30 2004-04-15 Applied Materials Israel, Ltd. Inspection system with oblique viewing angle
US7525659B2 (en) * 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
KR100524213B1 (ko) * 2003-02-28 2005-10-27 삼성전자주식회사 기판 검사 방법 및 장치
DE10330005B4 (de) * 2003-07-03 2006-12-21 Leica Microsystems Semiconductor Gmbh Vorrichtung zur Inspektion eines Wafers
DE10332572A1 (de) * 2003-07-11 2005-02-17 Nanophotonics Ag Fertigungsanlage für Halbleiterbauelemente und Messkammern für Fertigungsanlagen für Halbleiterbauelemente
US7340087B2 (en) * 2003-07-14 2008-03-04 Rudolph Technologies, Inc. Edge inspection
US7366344B2 (en) * 2003-07-14 2008-04-29 Rudolph Technologies, Inc. Edge normal process
US7227628B1 (en) * 2003-10-10 2007-06-05 Kla-Tencor Technologies Corp. Wafer inspection systems and methods for analyzing inspection data
TWI231557B (en) * 2004-05-10 2005-04-21 Powerchip Semiconductor Corp Method of defect inspection
US7075741B1 (en) 2004-06-14 2006-07-11 Kla Tencor Technologues Corporation System and method for automatically determining magnetic eccentricity of a disk
US7397552B2 (en) 2004-09-27 2008-07-08 Applied Materials, Israel, Ltd. Optical inspection with alternating configurations
US7396022B1 (en) 2004-09-28 2008-07-08 Kla-Tencor Technologies Corp. System and method for optimizing wafer flatness at high rotational speeds
US7201799B1 (en) 2004-11-24 2007-04-10 Kla-Tencor Technologies Corporation System and method for classifying, detecting, and counting micropipes
US7804934B2 (en) 2004-12-22 2010-09-28 Jordan Valley Semiconductors Ltd. Accurate measurement of layer dimensions using XRF
US7684032B1 (en) 2005-01-06 2010-03-23 Kla-Tencor Corporation Multi-wavelength system and method for detecting epitaxial layer defects
US20060154385A1 (en) * 2005-01-07 2006-07-13 Ravinder Aggarwal Fabrication pathway integrated metrology device
US7720631B2 (en) 2005-01-20 2010-05-18 Revera, Incorporated Semiconductor substrate processing method and apparatus
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
KR100663365B1 (ko) * 2005-07-18 2007-01-02 삼성전자주식회사 내부에 적어도 한 쌍의 빔 경로들을 갖는 렌즈 유니트를구비하는 광학적 검사장비들 및 이를 사용하여 기판의 표면결함들을 검출하는 방법들
KR101374308B1 (ko) * 2005-12-23 2014-03-14 조르단 밸리 세미컨덕터즈 리미티드 Ｘｒｆ를 사용한 층 치수의 정밀 측정법
US7417733B2 (en) * 2006-02-08 2008-08-26 Lam Research Corporation Chamber particle detection system
JP2009526240A (ja) * 2006-02-09 2009-07-16 ケーエルエー−テンカー テクノロジィース コーポレイション ウエハの特性決定のための方法とシステム
US8031931B2 (en) * 2006-04-24 2011-10-04 Applied Materials South East Asia Pte. Ltd. Printed fourier filtering in optical inspection tools
WO2007137261A2 (en) * 2006-05-22 2007-11-29 Kla-Tencor Technologies Corporation Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool
CN101449194B (zh) * 2006-06-20 2012-06-13 数据逻辑扫描公司 具有多个像场的成像扫描仪
WO2008001922A1 (en) * 2006-06-27 2008-01-03 Nec Corporation Method for analyzing warp of board or electronic component, system for analyzing warp of board or electronic component and program for analyzing warp of board or electronic component
JP5349742B2 (ja) * 2006-07-07 2013-11-20 株式会社日立ハイテクノロジーズ 表面検査方法及び表面検査装置
KR20080013059A (ko) * 2006-08-07 2008-02-13 삼성전자주식회사 씨엠피공정설비의 웨이퍼 검사장치 및 그 방법
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
JP5531408B2 (ja) * 2006-09-08 2014-06-25 大日本印刷株式会社 汚染性評価方法、汚染性評価装置、光学部材の製造方法、光学積層体及びディスプレイ製品
US7740437B2 (en) * 2006-09-22 2010-06-22 Asm International N.V. Processing system with increased cassette storage capacity
IL180482A0 (en) * 2007-01-01 2007-06-03 Jordan Valley Semiconductors Inspection of small features using x - ray fluorescence
US7817262B2 (en) * 2007-06-27 2010-10-19 Vistec Semiconductor Systems Gmbh Device for measuring positions of structures on a substrate
US8611639B2 (en) 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
DE102007036813B4 (de) * 2007-08-03 2010-12-30 Vistec Semiconductor Systems Gmbh Verfahren zum Bestimmen von Positionen von Strukturen auf einem Substrat
DE102007000991B4 (de) * 2007-11-15 2010-07-15 Vistec Semiconductor Systems Gmbh Vorrichtung zur Positionsmessung mindestens einer Struktur auf einem Substrat
US8608076B2 (en) * 2008-02-12 2013-12-17 Datalogic ADC, Inc. Monolithic mirror structure for use in a multi-perspective optical code reader
EP2248069B1 (en) 2008-02-12 2013-08-28 Datalogic ADC, Inc. Systems and methods for forming a composite image of multiple portions of an object from multiple perspectives
US8353457B2 (en) * 2008-02-12 2013-01-15 Datalogic ADC, Inc. Systems and methods for forming a composite image of multiple portions of an object from multiple perspectives
US8678287B2 (en) * 2008-02-12 2014-03-25 Datalogic ADC, Inc. Two-plane optical code reader for acquisition of multiple views of an object
CN102016554B (zh) * 2008-04-04 2013-01-30 南达技术公司 光学检验系统及方法
CN102037371B (zh) * 2008-05-21 2015-11-25 光子动力学公司 使用前侧照射增强显示面板的缺陷检测
US7912658B2 (en) * 2008-05-28 2011-03-22 Kla-Tencor Corp. Systems and methods for determining two or more characteristics of a wafer
KR101647010B1 (ko) * 2008-06-19 2016-08-10 케이엘에이-텐코어 코오포레이션 웨이퍼의 하나 이상의 특성들을 결정하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들
US8269960B2 (en) * 2008-07-24 2012-09-18 Kla-Tencor Corp. Computer-implemented methods for inspecting and/or classifying a wafer
US8261990B2 (en) 2008-12-26 2012-09-11 Datalogic ADC, Inc. Data reader having compact arrangement for acquisition of multiple views of an object
US8322621B2 (en) 2008-12-26 2012-12-04 Datalogic ADC, Inc. Image-based code reader for acquisition of multiple views of an object and methods for employing same
US8229204B2 (en) 2009-06-29 2012-07-24 Ecolab Inc. Optical processing of surfaces to determine cleanliness
US8509473B2 (en) 2009-06-29 2013-08-13 Ecolab Inc. Optical processing to control a washing apparatus
US9390984B2 (en) 2011-10-11 2016-07-12 Bruker Jv Israel Ltd. X-ray inspection of bumps on a semiconductor substrate
US9036142B2 (en) * 2012-05-09 2015-05-19 Seagate Technology Llc Surface features mapping
US9389192B2 (en) 2013-03-24 2016-07-12 Bruker Jv Israel Ltd. Estimation of XRF intensity from an array of micro-bumps
US9406330B1 (en) * 2013-06-19 2016-08-02 WD Media, LLC Method for HDD disk defect source detection
US9632043B2 (en) 2014-05-13 2017-04-25 Bruker Jv Israel Ltd. Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF
US9829448B2 (en) 2014-10-30 2017-11-28 Bruker Jv Israel Ltd. Measurement of small features using XRF
CN108351306A (zh) * 2015-10-28 2018-07-31 应用材料公司 用以处理基板上的材料的设备、用于处理设备的冷却配置、和用以测量于基板上处理的材料的性质的方法
US10565701B2 (en) * 2015-11-16 2020-02-18 Applied Materials, Inc. Color imaging for CMP monitoring
EP3820610A1 (en) 2018-07-12 2021-05-19 Luminex Corporation Systems and methods for performing variable sample preparation and analysis processes
US11637031B2 (en) * 2019-11-04 2023-04-25 Tokyo Electron Limited Systems and methods for spin process video analysis during substrate processing
US11187730B2 (en) * 2019-11-19 2021-11-30 Rohde & Schwarz Gmbh & Co. Kg Probe head, probe coupler and probe arrangement
DE102020102419A1 (de) * 2020-01-31 2021-08-05 Carl Zeiss Microscopy Gmbh Partikelanalyse mit Lichtmikroskop und Mehrpixelpolarisationsfilter
KR20220119492A (ko) * 2020-02-03 2022-08-29 에이에스엠엘 홀딩 엔.브이. 산란계 기반의 입자 검사 시스템의 개선된 정렬
CN115427787A (zh) 2020-04-15 2022-12-02 Asml控股股份有限公司 污染物分析量测系统、光刻设备及其方法
US11699595B2 (en) * 2021-02-25 2023-07-11 Applied Materials, Inc. Imaging for monitoring thickness in a substrate cleaning system
US12094740B2 (en) * 2021-03-25 2024-09-17 Applied Materials, Inc. Automated dry-in dry-out dual side polishing of silicon substrates with integrated spin rinse dry and metrology
US20240351162A1 (en) * 2023-04-18 2024-10-24 Globalfoundries U.S. Inc. System for imaging substrate surface and related method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07333164A (ja) * 1994-06-14 1995-12-22 Hitachi Ltd 検査方法および検査装置
KR960036673A (ko) * 1995-03-15 1996-10-28 르네 뮬러 반사표면 코팅부에 있는 결함을 인식 평가하는 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790287A (en) * 1972-03-31 1974-02-05 Western Electric Co Surface inspection with scanned focused light beams
US4342515A (en) * 1978-01-27 1982-08-03 Hitachi, Ltd. Method of inspecting the surface of an object and apparatus therefor
US4377340A (en) * 1980-10-24 1983-03-22 Hamamatsu Systems, Inc. Method and apparatus for detecting particles on a material
US4378159A (en) * 1981-03-30 1983-03-29 Tencor Instruments Scanning contaminant and defect detector
US4376583A (en) * 1981-05-12 1983-03-15 Aeronca Electronics, Inc. Surface inspection scanning system
US4569695A (en) * 1983-04-21 1986-02-11 Nec Corporation Method of cleaning a photo-mask
US4655592A (en) * 1983-12-30 1987-04-07 Hamamatsu Systems, Inc. Particle detection method and apparatus
US4659220A (en) * 1984-10-22 1987-04-21 International Business Machines Corporation Optical inspection system for semiconductor wafers
DE3517665A1 (de) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von siliciumscheiben
US4772126A (en) * 1986-10-23 1988-09-20 Inspex Incorporated Particle detection method and apparatus
US4895446A (en) * 1986-10-23 1990-01-23 Inspex Incorporated Particle detection method and apparatus
US5274434A (en) * 1990-04-02 1993-12-28 Hitachi, Ltd. Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line
US5317380A (en) * 1991-02-19 1994-05-31 Inspex, Inc. Particle detection method and apparatus
US5189481A (en) * 1991-07-26 1993-02-23 Tencor Instruments Particle detector for rough surfaces
US5766360A (en) * 1992-03-27 1998-06-16 Kabushiki Kaisha Toshiba Substrate processing apparatus and substrate processing method
JPH05322781A (ja) * 1992-05-19 1993-12-07 Sony Corp 表面異物検査装置
US5417537A (en) * 1993-05-07 1995-05-23 Miller; Kenneth C. Wafer transport device
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5479252A (en) * 1993-06-17 1995-12-26 Ultrapointe Corporation Laser imaging system for inspection and analysis of sub-micron particles
US5493123A (en) * 1994-04-28 1996-02-20 Particle Measuring Systems, Inc. Surface defect inspection system and method
US5535005A (en) * 1994-08-25 1996-07-09 Texas Instruments Incorporated Method and system for inspecting polished surface texture
JP3483948B2 (ja) * 1994-09-01 2004-01-06 オリンパス株式会社 欠陥検出装置
US5631733A (en) * 1995-01-20 1997-05-20 Photon Dynamics, Inc. Large area defect monitor tool for manufacture of clean surfaces
US5712701A (en) * 1995-03-06 1998-01-27 Ade Optical Systems Corporation Surface inspection system and method of inspecting surface of workpiece
JP3523764B2 (ja) * 1997-01-23 2004-04-26 株式会社ニレコ 非金属介在物測定における異物検出装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07333164A (ja) * 1994-06-14 1995-12-22 Hitachi Ltd 検査方法および検査装置
KR960036673A (ko) * 1995-03-15 1996-10-28 르네 뮬러 반사표면 코팅부에 있는 결함을 인식 평가하는 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101302710B1 (ko) * 2005-03-18 2013-09-03 덴마크스 텍니스케 유니버시테트 복수의 광 트랩을 사용하는 광 조작 시스템
KR101020046B1 (ko) 2008-08-22 2011-03-09 주식회사 티엔텍 기판 표면 검사장치

Also Published As

Publication number Publication date
JP4527205B2 (ja) 2010-08-18
AU6942998A (en) 1998-10-22
EP1016126A2 (en) 2000-07-05
EP1016126A4 (en) 2009-04-01
US5909276A (en) 1999-06-01
JP2001519021A (ja) 2001-10-16
EP1016126B1 (en) 2018-12-26
WO1998044330A3 (en) 1998-12-23
KR20010005875A (ko) 2001-01-15
WO1998044330A2 (en) 1998-10-08

Similar Documents

Publication Publication Date Title
KR100540314B1 (ko) 광학 검사 모듈, 및 통합 처리 도구 내에서 기판 상의 입자 및 결함을 검출하기 위한 방법
US6809809B2 (en) Optical method and apparatus for inspecting large area planar objects
US6630996B2 (en) Optical method and apparatus for inspecting large area planar objects
CN109427609B (zh) 半导体晶片在线检验的系统及方法
US7072034B2 (en) Systems and methods for inspection of specimen surfaces
US6707544B1 (en) Particle detection and embedded vision system to enhance substrate yield and throughput
US20040207836A1 (en) High dynamic range optical inspection system and method
JP5032114B2 (ja) パターン化ウェハまたは非パターン化ウェハおよびその他の検体の検査システム
US7227628B1 (en) Wafer inspection systems and methods for analyzing inspection data
US5640237A (en) Method and apparatus for detecting non-uniformities in reflective surafaces
Stokowski et al. Wafer inspection technology challenges for ULSI manufacturing
WO1997013140A9 (en) Technique for determining defect positions in three dimensions in a transparent structure
CN112074937A (zh) 半导体晶片上的重复缺陷的捕捉
KR100871495B1 (ko) 자동 프로세스 검증 및 계층적 기판 검사를 위한 방법 및장치
JPH09252035A (ja) 半導体ウェーハの外観検査方法および装置
JP3482425B2 (ja) 検査装置
JP7801311B2 (ja) 高スループット光学計測
US6356091B1 (en) Automatic wafer mapping in a wet environment on a wafer cleaner
CN213580716U (zh) 用于检测晶圆吸盘残留异物的线扫描光学检测系统
JP2008020371A (ja) 検査装置
US20240412350A1 (en) Optical metrology device
WO2002073173A2 (en) Systems and methods for inspection of specimen surfaces
WO2024252981A1 (ja) 基板検査装置、基板検査方法及び記憶媒体

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20111207

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20121227

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20121227

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000