KR100496526B1 - 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 - Google Patents

표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 Download PDF

Info

Publication number
KR100496526B1
KR100496526B1 KR10-2002-0058216A KR20020058216A KR100496526B1 KR 100496526 B1 KR100496526 B1 KR 100496526B1 KR 20020058216 A KR20020058216 A KR 20020058216A KR 100496526 B1 KR100496526 B1 KR 100496526B1
Authority
KR
South Korea
Prior art keywords
lithium tantalate
single crystal
substrate
tantalate single
acoustic wave
Prior art date
Application number
KR10-2002-0058216A
Other languages
English (en)
Korean (ko)
Other versions
KR20040029247A (ko
Inventor
채수병
김윤성
김한균
강진기
Original Assignee
일진디스플레이(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일진디스플레이(주) filed Critical 일진디스플레이(주)
Priority to KR10-2002-0058216A priority Critical patent/KR100496526B1/ko
Priority to PCT/KR2003/001958 priority patent/WO2004030046A1/en
Priority to JP2004539629A priority patent/JP2005535555A/ja
Priority to AU2003267833A priority patent/AU2003267833A1/en
Publication of KR20040029247A publication Critical patent/KR20040029247A/ko
Application granted granted Critical
Publication of KR100496526B1 publication Critical patent/KR100496526B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02921—Measures for preventing electric discharge due to pyroelectricity

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR10-2002-0058216A 2002-09-25 2002-09-25 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 KR100496526B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR10-2002-0058216A KR100496526B1 (ko) 2002-09-25 2002-09-25 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법
PCT/KR2003/001958 WO2004030046A1 (en) 2002-09-25 2003-09-25 Method of producing lithium tantalate substrate for surface acoustic wave element
JP2004539629A JP2005535555A (ja) 2002-09-25 2003-09-25 表面弾性波素子用タンタル酸リチウム単結晶基板の製造方法
AU2003267833A AU2003267833A1 (en) 2002-09-25 2003-09-25 Method of producing lithium tantalate substrate for surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0058216A KR100496526B1 (ko) 2002-09-25 2002-09-25 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법

Publications (2)

Publication Number Publication Date
KR20040029247A KR20040029247A (ko) 2004-04-06
KR100496526B1 true KR100496526B1 (ko) 2005-06-22

Family

ID=32040925

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0058216A KR100496526B1 (ko) 2002-09-25 2002-09-25 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법

Country Status (4)

Country Link
JP (1) JP2005535555A (ja)
KR (1) KR100496526B1 (ja)
AU (1) AU2003267833A1 (ja)
WO (1) WO2004030046A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6932957B2 (en) 2002-06-28 2005-08-23 Silicon Light Machines Corporation Method and apparatus for increasing bulk conductivity of a ferroelectric material
US7309392B2 (en) 2003-11-25 2007-12-18 Sumitomo Metal Mining Co., Ltd. Lithium niobate substrate and method of producing the same
KR100651760B1 (ko) * 2004-05-14 2006-12-01 일진디스플레이(주) 표면 탄성파 소자용 탄탈산 리튬 기판의 제조방법과 그 기판
US7153487B2 (en) 2004-05-25 2006-12-26 Crystal Technology, Inc. Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals
US7728697B2 (en) 2006-09-26 2010-06-01 Mg Materials Corporation Systems and methods for electrically reducing ferroelectric materials to increase bulk conductivity
CN108624961B (zh) * 2018-05-29 2020-06-30 中国电子科技集团公司第二十六研究所 一种钽酸锂黑片的回收再利用方法
JP7099203B2 (ja) * 2018-09-06 2022-07-12 住友金属鉱山株式会社 タンタル酸リチウム基板の製造方法
WO2022176689A1 (ja) * 2021-02-19 2022-08-25 信越化学工業株式会社 複合ウェーハおよびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246299A (ja) * 1985-04-22 1985-12-05 Toshiba Corp タンタル酸リチウム単結晶ウエハーの製造方法
JPS63218596A (ja) * 1987-03-05 1988-09-12 Hitachi Metals Ltd 光透過性に優れたリチウムタンタレ−ト単結晶およびその製造方法
JPH06250399A (ja) * 1993-02-24 1994-09-09 Fuji Elelctrochem Co Ltd 焦電性を有する物質の熱処理方法及び装置
JPH06293598A (ja) * 1993-04-05 1994-10-21 Shin Etsu Chem Co Ltd 光用ＬｉＴａＯ３単結晶およびその製造方法
US6319430B1 (en) * 1997-07-25 2001-11-20 Crystal Technology, Inc. Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3261594B2 (ja) * 1992-04-24 2002-03-04 日立金属株式会社 タンタル酸リチウム単結晶、単結晶基板および光素子
JPH10270977A (ja) * 1997-03-21 1998-10-09 Mitsubishi Materials Corp 表面弾性波素子
JP3712035B2 (ja) * 1999-04-28 2005-11-02 株式会社村田製作所 表面波装置の製造方法
JP2002226299A (ja) * 2000-12-01 2002-08-14 Toshiba Corp 単結晶製造装置及び単結晶製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246299A (ja) * 1985-04-22 1985-12-05 Toshiba Corp タンタル酸リチウム単結晶ウエハーの製造方法
JPS63218596A (ja) * 1987-03-05 1988-09-12 Hitachi Metals Ltd 光透過性に優れたリチウムタンタレ−ト単結晶およびその製造方法
JPH06250399A (ja) * 1993-02-24 1994-09-09 Fuji Elelctrochem Co Ltd 焦電性を有する物質の熱処理方法及び装置
JPH06293598A (ja) * 1993-04-05 1994-10-21 Shin Etsu Chem Co Ltd 光用ＬｉＴａＯ３単結晶およびその製造方法
US6319430B1 (en) * 1997-07-25 2001-11-20 Crystal Technology, Inc. Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same

Also Published As

Publication number Publication date
AU2003267833A1 (en) 2004-04-19
KR20040029247A (ko) 2004-04-06
WO2004030046A1 (en) 2004-04-08
JP2005535555A (ja) 2005-11-24

Similar Documents

Publication Publication Date Title
JP3938147B2 (ja) タンタル酸リチウム基板およびその製造方法
KR101213405B1 (ko) 탄탈산 리튬 기판 및 그 제조방법
KR101213411B1 (ko) 탄탈산 리튬 기판 및 그 제조방법
JP4063191B2 (ja) タンタル酸リチウム基板の製造方法
KR100496526B1 (ko) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법
WO2001033260A1 (en) Preconditioned crystals of lithium niobate and lithium tantalate and methods of preparing the same
KR100496527B1 (ko) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법
JP2019156655A (ja) タンタル酸リチウム基板の製造方法
KR100651760B1 (ko) 표면 탄성파 소자용 탄탈산 리튬 기판의 제조방법과 그 기판
JPS6120336A (ja) シリコン表面上に酸化物層を成長させる方法
JP2019112267A (ja) タンタル酸リチウム基板の製造方法
JP7099203B2 (ja) タンタル酸リチウム基板の製造方法
EP3366816B1 (en) Method for producing lithium niobate single crystal substrate
KR100489548B1 (ko) 표면 탄성파 소자용 기판의 제조방법 및 그 기판
JP2004328712A (ja) タンタル酸リチウム基板およびその製造方法
US6338804B1 (en) Method for removing conductive portions
JP2005317822A (ja) 単一分極化されたタンタル酸リチウムの製造方法
JP2007176715A (ja) タンタル酸リチウム基板の製造方法
JP2004152870A (ja) 圧電基板の製造方法、圧電基板及び表面波装置
KR950000646B1 (ko) LiTaO₃단결정의 단일 분역화 방법
JP2004315316A (ja) 単一分極化されたタンタル酸リチウム結晶の製造方法
EP3312313A1 (en) Lithium niobate single crystal substrate and method for producing same
JP2022099960A (ja) 酸化物単結晶の製造方法、及びその製造方法に用いる電極
SU1068554A1 (ru) Способ термообработки полупроводников и устройство дл его осуществлени
WO2006051610A1 (ja) タンタル酸リチウム結晶の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080613

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee