AU2003267833A1 - Method of producing lithium tantalate substrate for surface acoustic wave element - Google Patents

Method of producing lithium tantalate substrate for surface acoustic wave element

Info

Publication number
AU2003267833A1
AU2003267833A1 AU2003267833A AU2003267833A AU2003267833A1 AU 2003267833 A1 AU2003267833 A1 AU 2003267833A1 AU 2003267833 A AU2003267833 A AU 2003267833A AU 2003267833 A AU2003267833 A AU 2003267833A AU 2003267833 A1 AU2003267833 A1 AU 2003267833A1
Authority
AU
Australia
Prior art keywords
acoustic wave
surface acoustic
wave element
lithium tantalate
producing lithium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003267833A
Inventor
Soo-Byong Chea
Jin-Ki Kang
Han-Gyun Kim
Yoon-Seong Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iljin Diamond Co Ltd
Original Assignee
Iljin Diamond Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iljin Diamond Co Ltd filed Critical Iljin Diamond Co Ltd
Publication of AU2003267833A1 publication Critical patent/AU2003267833A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02921—Measures for preventing electric discharge due to pyroelectricity

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
AU2003267833A 2002-09-25 2003-09-25 Method of producing lithium tantalate substrate for surface acoustic wave element Abandoned AU2003267833A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2002-0058216A KR100496526B1 (en) 2002-09-25 2002-09-25 Method of producing lithium tantalate substrate for surface acoustic wave element
KR10-2002-0058216 2002-09-25
PCT/KR2003/001958 WO2004030046A1 (en) 2002-09-25 2003-09-25 Method of producing lithium tantalate substrate for surface acoustic wave element

Publications (1)

Publication Number Publication Date
AU2003267833A1 true AU2003267833A1 (en) 2004-04-19

Family

ID=32040925

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003267833A Abandoned AU2003267833A1 (en) 2002-09-25 2003-09-25 Method of producing lithium tantalate substrate for surface acoustic wave element

Country Status (4)

Country Link
JP (1) JP2005535555A (en)
KR (1) KR100496526B1 (en)
AU (1) AU2003267833A1 (en)
WO (1) WO2004030046A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6932957B2 (en) 2002-06-28 2005-08-23 Silicon Light Machines Corporation Method and apparatus for increasing bulk conductivity of a ferroelectric material
US7309392B2 (en) 2003-11-25 2007-12-18 Sumitomo Metal Mining Co., Ltd. Lithium niobate substrate and method of producing the same
KR100651760B1 (en) * 2004-05-14 2006-12-01 일진디스플레이(주) Method of producing lithium tantalate substrate for surface acoustic wave element and the substrate the same
US7153487B2 (en) 2004-05-25 2006-12-26 Crystal Technology, Inc. Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals
US7728697B2 (en) 2006-09-26 2010-06-01 Mg Materials Corporation Systems and methods for electrically reducing ferroelectric materials to increase bulk conductivity
CN108624961B (en) * 2018-05-29 2020-06-30 中国电子科技集团公司第二十六研究所 Method for recycling lithium tantalate black chips
JP7099203B2 (en) * 2018-09-06 2022-07-12 住友金属鉱山株式会社 Manufacturing method of lithium tantalate substrate
WO2022176689A1 (en) * 2021-02-19 2022-08-25 信越化学工業株式会社 Composite wafer and method for producing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246299A (en) * 1985-04-22 1985-12-05 Toshiba Corp Production of lithium tantalate single crystal wafer
JPS63218596A (en) * 1987-03-05 1988-09-12 Hitachi Metals Ltd Lithium tantalate single crystal excellent in light transmittance and production thereof
JP3261594B2 (en) * 1992-04-24 2002-03-04 日立金属株式会社 Lithium tantalate single crystal, single crystal substrate and optical device
JPH06250399A (en) * 1993-02-24 1994-09-09 Fuji Elelctrochem Co Ltd Method and apparatus for heat treatment of material having pyroelectric property
JP3724509B2 (en) * 1993-04-05 2005-12-07 信越化学工業株式会社 LiTaO3 single crystal for light and manufacturing method thereof
JPH10270977A (en) * 1997-03-21 1998-10-09 Mitsubishi Materials Corp Surface acoustic wave element
US6319430B1 (en) * 1997-07-25 2001-11-20 Crystal Technology, Inc. Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same
JP3712035B2 (en) * 1999-04-28 2005-11-02 株式会社村田製作所 Manufacturing method of surface wave device
JP2002226299A (en) * 2000-12-01 2002-08-14 Toshiba Corp Apparatus and method for manufacturing single crystal

Also Published As

Publication number Publication date
KR100496526B1 (en) 2005-06-22
WO2004030046A1 (en) 2004-04-08
KR20040029247A (en) 2004-04-06
JP2005535555A (en) 2005-11-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase