KR100444655B1 - 반도체장치의결정성규소막의형성방법 - Google Patents

반도체장치의결정성규소막의형성방법 Download PDF

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Publication number
KR100444655B1
KR100444655B1 KR1019950047680A KR19950047680A KR100444655B1 KR 100444655 B1 KR100444655 B1 KR 100444655B1 KR 1019950047680 A KR1019950047680 A KR 1019950047680A KR 19950047680 A KR19950047680 A KR 19950047680A KR 100444655 B1 KR100444655 B1 KR 100444655B1
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KR
South Korea
Prior art keywords
film
metal element
surfactant
forming
crystalline silicon
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Expired - Fee Related
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KR1019950047680A
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English (en)
Korean (ko)
Inventor
야마자끼순페이
미야나가아키하루
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR100444655B1 publication Critical patent/KR100444655B1/ko
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Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1019950047680A 1994-12-09 1995-12-08 반도체장치의결정성규소막의형성방법 Expired - Fee Related KR100444655B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33160894A JP3418647B2 (ja) 1994-12-09 1994-12-09 半導体装置作製方法および結晶成長促進剤
JP94-331608 1994-12-09

Publications (1)

Publication Number Publication Date
KR100444655B1 true KR100444655B1 (ko) 2004-11-26

Family

ID=18245564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950047680A Expired - Fee Related KR100444655B1 (ko) 1994-12-09 1995-12-08 반도체장치의결정성규소막의형성방법

Country Status (4)

Country Link
JP (1) JP3418647B2 (enrdf_load_stackoverflow)
KR (1) KR100444655B1 (enrdf_load_stackoverflow)
CN (1) CN1090813C (enrdf_load_stackoverflow)
TW (1) TW285778B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144643B1 (ko) * 1994-12-28 1998-08-17 심상철 금속흡착법에 의한 다결정 규소박막의 제조방법
JPH10228248A (ja) 1996-12-09 1998-08-25 Semiconductor Energy Lab Co Ltd アクティブマトリクス表示装置およびその作製方法
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6794229B2 (en) 2000-04-28 2004-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
CN100337304C (zh) * 2003-08-22 2007-09-12 友达光电股份有限公司 形成多晶硅层的方法
JP2007108785A (ja) * 2006-12-25 2007-04-26 Semiconductor Energy Lab Co Ltd 半導体装置
CN105632923B (zh) * 2014-10-28 2018-11-16 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
KR0171923B1 (ko) * 1993-02-15 1999-02-01 순페이 야마자끼 반도체장치 제작방법

Also Published As

Publication number Publication date
JP3418647B2 (ja) 2003-06-23
CN1132409A (zh) 1996-10-02
CN1090813C (zh) 2002-09-11
TW285778B (enrdf_load_stackoverflow) 1996-09-11
JPH08167572A (ja) 1996-06-25

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