KR100408792B1 - 자성 가넷 단결정 및 이를 이용한 패러데이 회전자 - Google Patents
자성 가넷 단결정 및 이를 이용한 패러데이 회전자 Download PDFInfo
- Publication number
- KR100408792B1 KR100408792B1 KR10-2000-0043761A KR20000043761A KR100408792B1 KR 100408792 B1 KR100408792 B1 KR 100408792B1 KR 20000043761 A KR20000043761 A KR 20000043761A KR 100408792 B1 KR100408792 B1 KR 100408792B1
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- magnetic garnet
- weight
- faraday
- film
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
Claims (7)
- 액상 에피택셜 성장법에 의해 육성되어, 일반식 BiaPbbA3-a-bFe5-c-dBcPtdO12(식 중의 A는 Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu 중에서 선택되는 적어도 1 종류의 원소, B는 Ga, A1, Sc, Ge, Si 중에서 선택되는 적어도 1종류의 원소, a, b, c, d는 각각 0<a<3.0, 0<b≤2.0, 0≤c≤2.0, 0<d≤2.0)로 나타내는 것을 특징으로 하는 자성 가넷 단결정.
- 제 1 항에 있어서, 막두께가 200 μm 이상인 것을 특징으로 하는 자성 가넷 단결정.
- 제 2 항에 있어서, 0.5≤b/d≤2.0인 것을 특징으로 하는 자성 가넷 단결정.
- 액상 에피택셜 성장법에 의해 육성되어, 일반식 BiaPbbA3-a-bFe5-c-dBcGedO12(식 중의 A는 Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu 중에서 선택되는 적어도 1 종류의 원소, B는 Ga, Al, Sc, Pt, Si 중에서 선택되는 적어도 1종류의 원소, a, b, c, d는 각각 0<a<3.0, 0<b≤2.0, 0≤c≤2.0, 0<d≤2.0)로 나타내는 것을 특징으로 하는 자성 가넷 단결정.
- 제 4 항에 있어서, 막두께가 200 μm 이상인 것을 특징으로 하는 자성 가넷 단결정.
- 제 1 항 내지 제 5 항 중 어느 한 항의 자성 가넷 단결정으로 형성되는 것을 특징으로 하는 패러데이 회전자.
- 제 6 항에 있어서, 삽입손실이 0.1 dB 이하인 것을 특징으로 하는 패러데이 회전자.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11218656A JP2001044027A (ja) | 1999-08-02 | 1999-08-02 | 磁性ガーネット単結晶およびそれを用いたファラデー回転子 |
JP99-218655 | 1999-08-02 | ||
JP99-218656 | 1999-08-02 | ||
JP11218655A JP2001044026A (ja) | 1999-08-02 | 1999-08-02 | 磁性ガーネット単結晶およびそれを用いたファラデー回転子 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010049925A KR20010049925A (ko) | 2001-06-15 |
KR100408792B1 true KR100408792B1 (ko) | 2003-12-06 |
Family
ID=26522680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-0043761A KR100408792B1 (ko) | 1999-08-02 | 2000-07-28 | 자성 가넷 단결정 및 이를 이용한 패러데이 회전자 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6641751B1 (ko) |
EP (1) | EP1074872A3 (ko) |
KR (1) | KR100408792B1 (ko) |
CN (1) | CN1165922C (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3753920B2 (ja) * | 2000-03-22 | 2006-03-08 | Tdk株式会社 | 磁性ガーネット単結晶膜及びその製造方法、及びそれを用いたファラデー回転子 |
US7133189B2 (en) * | 2002-02-22 | 2006-11-07 | Tdk Corporation | Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same |
JP4107292B2 (ja) * | 2002-09-27 | 2008-06-25 | 株式会社村田製作所 | テルビウム系常磁性ガーネット単結晶及び磁器光学デバイス |
KR100540449B1 (ko) * | 2002-12-03 | 2006-01-11 | 김유곤 | 자성 가넷 단결정의 제조방법 및 그 방법에 의해 제조된자성 가넷 단결정 |
CN100385693C (zh) * | 2005-08-18 | 2008-04-30 | 中国科学院半导体研究所 | 用等离子体处理提高硅基晶体薄膜发光的方法 |
CN104480525A (zh) * | 2014-12-19 | 2015-04-01 | 单县晶瑞光电有限公司 | 一种铽镓石榴石磁光晶体的生长方法 |
CN107146761B (zh) * | 2017-05-05 | 2020-07-28 | 电子科技大学 | 一种巨磁光效应的钇铁石榴石/铋异质薄膜的制备方法 |
CN111910252A (zh) * | 2020-07-17 | 2020-11-10 | 中国电子科技集团公司第九研究所 | 大尺寸掺杂yig单晶薄膜材料及制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61265809A (ja) * | 1985-05-20 | 1986-11-25 | Sony Corp | ビスマス置換磁性ガーネットの製法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0646604B2 (ja) | 1987-04-01 | 1994-06-15 | ティーディーケイ株式会社 | ビスマス置換磁性ガーネット |
JP2800974B2 (ja) | 1989-03-06 | 1998-09-21 | 信越化学工業株式会社 | ガーネット単結晶膜およびその製造方法 |
JPH06302422A (ja) * | 1991-07-25 | 1994-10-28 | Furukawa Electric Co Ltd:The | 磁界センサー用磁性ガーネット |
JPH0646604A (ja) | 1992-07-28 | 1994-02-22 | Matsushita Electric Works Ltd | 草抜き器 |
JP3649935B2 (ja) * | 1999-03-15 | 2005-05-18 | Tdk株式会社 | 磁性ガーネット材料およびそれを用いたファラデー回転子 |
JP3699629B2 (ja) * | 2000-02-22 | 2005-09-28 | Tdk株式会社 | 磁性ガーネット材料及びそれを用いた磁気光学素子 |
-
2000
- 2000-07-25 US US09/625,417 patent/US6641751B1/en not_active Expired - Lifetime
- 2000-07-27 EP EP00116332A patent/EP1074872A3/en not_active Ceased
- 2000-07-28 KR KR10-2000-0043761A patent/KR100408792B1/ko active IP Right Grant
- 2000-08-02 CN CNB001225200A patent/CN1165922C/zh not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61265809A (ja) * | 1985-05-20 | 1986-11-25 | Sony Corp | ビスマス置換磁性ガーネットの製法 |
Also Published As
Publication number | Publication date |
---|---|
KR20010049925A (ko) | 2001-06-15 |
EP1074872A3 (en) | 2001-07-04 |
CN1282967A (zh) | 2001-02-07 |
US6641751B1 (en) | 2003-11-04 |
CN1165922C (zh) | 2004-09-08 |
EP1074872A2 (en) | 2001-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100408792B1 (ko) | 자성 가넷 단결정 및 이를 이용한 패러데이 회전자 | |
JP2004083390A (ja) | 磁性ガーネット材料、ファラデー回転子、光デバイス、ビスマス置換型希土類鉄ガーネット単結晶膜の製造方法および単結晶膜 | |
EP1128399B1 (en) | Magnetic garnet material and magnetooptical device using the same | |
JP2001044026A (ja) | 磁性ガーネット単結晶およびそれを用いたファラデー回転子 | |
JP2001044027A (ja) | 磁性ガーネット単結晶およびそれを用いたファラデー回転子 | |
EP1162635B1 (en) | Material for bismuth substituted garnet thick film and a manufacturing method thereof | |
JP4802995B2 (ja) | 磁性ガーネット単結晶及びそれを用いた光学素子 | |
JP3816591B2 (ja) | ビスマス置換希土類鉄ガーネット単結晶膜の製造方法 | |
JP3649935B2 (ja) | 磁性ガーネット材料およびそれを用いたファラデー回転子 | |
JPH06281902A (ja) | 磁気光学素子材料 | |
JP3490143B2 (ja) | 酸化物ガーネット単結晶 | |
JP2924282B2 (ja) | 磁気光学材料、その製造法およびそれを用いた光素子 | |
JP2874320B2 (ja) | 磁気光学材料、その製造法およびそれを用いた光素子 | |
EP0634684B1 (en) | Magneto-optical element | |
JP2000086396A (ja) | ビスマス置換型ガーネット厚膜材料及びその製造方法 | |
JP2004168657A (ja) | 磁性ガーネット単結晶およびそれを用いたファラデー回転子 | |
JP2004010395A (ja) | ビスマス置換希土類鉄ガーネット単結晶及びそれを用いたファラデー回転子及びそれを用いた光学素子 | |
JP2867736B2 (ja) | 磁気光学材料、その製造法およびそれを用いた光素子 | |
JP2843433B2 (ja) | Bi置換磁性ガーネット及び磁気光学素子 | |
JP2008074703A (ja) | ビスマス置換型ガーネット厚膜材料 | |
Silliman et al. | Improvement of FMR linewidth in Bi‐substituted lutetium iron garnet thin films for the MSW‐optical‐mode interaction | |
JP2004331454A (ja) | ビスマス置換型磁性ガーネット膜とその製造方法 | |
JP2009013059A (ja) | ビスマス置換型ガーネット厚膜材料及びその製造方法 | |
JPS60145990A (ja) | 液相エピタキシャル磁性ガーネット単結晶 | |
JP2001348298A (ja) | ビスマス置換型ガーネット厚膜材料及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121114 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20131031 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20141103 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20151102 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20161028 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20171030 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20181119 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20191118 Year of fee payment: 17 |