KR100388584B1 - 플라즈마 처리방법 및 플라즈마 처리실의 클리닝 방법 - Google Patents

플라즈마 처리방법 및 플라즈마 처리실의 클리닝 방법 Download PDF

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Publication number
KR100388584B1
KR100388584B1 KR1019940029516A KR19940029516A KR100388584B1 KR 100388584 B1 KR100388584 B1 KR 100388584B1 KR 1019940029516 A KR1019940029516 A KR 1019940029516A KR 19940029516 A KR19940029516 A KR 19940029516A KR 100388584 B1 KR100388584 B1 KR 100388584B1
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KR
South Korea
Prior art keywords
plasma
cleaning
substrate
processing
processed
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Expired - Lifetime
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KR1019940029516A
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English (en)
Korean (ko)
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KR950015620A (ko
Inventor
사또요시아끼
가따모또미쯔루
가와하라히로노브
소라오까미노루
우메모또쯔요시
기하라히데끼
구도우가쯔요시
유끼마사도오루
가리따니히로후미
Original Assignee
가부시끼가이샤 히다치 세이사꾸쇼
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Publication of KR950015620A publication Critical patent/KR950015620A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
KR1019940029516A 1993-11-12 1994-11-11 플라즈마 처리방법 및 플라즈마 처리실의 클리닝 방법 Expired - Lifetime KR100388584B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-283028 1993-11-12
JP5283028A JPH07142444A (ja) 1993-11-12 1993-11-12 マイクロ波プラズマ処理装置および処理方法

Publications (2)

Publication Number Publication Date
KR950015620A KR950015620A (ko) 1995-06-17
KR100388584B1 true KR100388584B1 (ko) 2003-09-19

Family

ID=17660290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940029516A Expired - Lifetime KR100388584B1 (ko) 1993-11-12 1994-11-11 플라즈마 처리방법 및 플라즈마 처리실의 클리닝 방법

Country Status (6)

Country Link
US (1) US5861601A (enExample)
EP (1) EP0653775B1 (enExample)
JP (1) JPH07142444A (enExample)
KR (1) KR100388584B1 (enExample)
DE (1) DE69416489T2 (enExample)
TW (1) TW266307B (enExample)

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JPH07263187A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
DE19713352A1 (de) * 1997-03-29 1998-10-01 Deutsch Zentr Luft & Raumfahrt Plasmabrennersystem
EP1189493A3 (en) * 1997-05-22 2004-06-23 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
JP2000124195A (ja) * 1998-10-14 2000-04-28 Tokyo Electron Ltd 表面処理方法及びその装置
JP3352418B2 (ja) 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
JP3310957B2 (ja) * 1999-08-31 2002-08-05 東京エレクトロン株式会社 プラズマ処理装置
JP2001203099A (ja) 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
JP4504511B2 (ja) 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP3574401B2 (ja) * 2000-12-13 2004-10-06 シャープ株式会社 プラズマプロセス装置
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20040221800A1 (en) * 2001-02-27 2004-11-11 Tokyo Electron Limited Method and apparatus for plasma processing
IL153154A (en) 2001-03-28 2007-03-08 Tadahiro Ohmi Plasma processing device
JP3870909B2 (ja) * 2003-01-31 2007-01-24 株式会社島津製作所 プラズマ処理装置
JP4213482B2 (ja) * 2003-02-07 2009-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5312411B2 (ja) * 2003-02-14 2013-10-09 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
US20060137613A1 (en) * 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
WO2005081302A1 (ja) * 2004-02-19 2005-09-01 Tokyo Electron Limited 基板処理装置における処理室のクリーニング方法およびクリーニングの終点検出方法
JP2006294422A (ja) * 2005-04-11 2006-10-26 Tokyo Electron Ltd プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components
JP4793662B2 (ja) * 2008-03-28 2011-10-12 独立行政法人産業技術総合研究所 マイクロ波プラズマ処理装置
US9890457B2 (en) * 2008-06-16 2018-02-13 Board Of Trustees Of Michigan State University Microwave plasma reactors
JP2011124295A (ja) * 2009-12-09 2011-06-23 Hitachi High-Technologies Corp プラズマ処理装置
JP5657953B2 (ja) * 2010-08-27 2015-01-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20160314939A1 (en) * 2015-04-24 2016-10-27 Surmet Corporation Plasma-resistant Aluminum Oxynitride Based Reactor Components for Semi-Conductor Manufacturing and Processing Equipment
JP6509049B2 (ja) * 2015-06-05 2019-05-08 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
CN107680915B (zh) 2016-08-02 2020-11-10 北京北方华创微电子装备有限公司 等离子体源的冷却机构及半导体加工设备
JP6698560B2 (ja) 2017-02-01 2020-05-27 東京エレクトロン株式会社 マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法
KR102141438B1 (ko) * 2018-07-20 2020-08-05 주식회사 히타치하이테크 플라스마 처리 장치

Citations (2)

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US5006192A (en) * 1988-06-28 1991-04-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for producing semiconductor devices
EP0478283A2 (en) * 1990-09-26 1992-04-01 Hitachi, Ltd. Microwave plasma processing method and apparatus

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FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
US4870245A (en) * 1985-04-01 1989-09-26 Motorola, Inc. Plasma enhanced thermal treatment apparatus
JPS6376434A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd プラズマ処理装置及びプラズマクリーニング方法
DE3750115T2 (de) * 1986-10-20 1995-01-19 Hitachi Ltd Plasmabearbeitungsgerät.
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
JP2680065B2 (ja) * 1988-09-22 1997-11-19 株式会社日立製作所 プラズマクリーニング方法
DE69030140T2 (de) * 1989-06-28 1997-09-04 Canon Kk Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate
US5367139A (en) * 1989-10-23 1994-11-22 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing
EP0502269A1 (en) * 1991-03-06 1992-09-09 Hitachi, Ltd. Method of and system for microwave plasma treatments
EP0510340B1 (de) * 1991-04-23 1995-05-10 Balzers Aktiengesellschaft Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer
US5198725A (en) * 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
KR100293830B1 (ko) * 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5410122A (en) * 1993-03-15 1995-04-25 Applied Materials, Inc. Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers
US5454903A (en) * 1993-10-29 1995-10-03 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization
US5507874A (en) * 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US5006192A (en) * 1988-06-28 1991-04-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for producing semiconductor devices
EP0478283A2 (en) * 1990-09-26 1992-04-01 Hitachi, Ltd. Microwave plasma processing method and apparatus

Also Published As

Publication number Publication date
US5861601A (en) 1999-01-19
EP0653775B1 (en) 1999-02-10
JPH07142444A (ja) 1995-06-02
DE69416489T2 (de) 1999-09-30
KR950015620A (ko) 1995-06-17
TW266307B (enExample) 1995-12-21
EP0653775A1 (en) 1995-05-17
DE69416489D1 (de) 1999-03-25

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