JP6698560B2 - マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法 - Google Patents
マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法 Download PDFInfo
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- JP6698560B2 JP6698560B2 JP2017016664A JP2017016664A JP6698560B2 JP 6698560 B2 JP6698560 B2 JP 6698560B2 JP 2017016664 A JP2017016664 A JP 2017016664A JP 2017016664 A JP2017016664 A JP 2017016664A JP 6698560 B2 JP6698560 B2 JP 6698560B2
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- plasma processing
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- 238000012545 processing Methods 0.000 title claims description 59
- 238000003672 processing method Methods 0.000 title claims description 6
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- 239000007769 metal material Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 73
- 230000005684 electric field Effects 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
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- 238000004088 simulation Methods 0.000 description 7
- 238000005121 nitriding Methods 0.000 description 6
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- 230000000875 corresponding effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
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- 238000012544 monitoring process Methods 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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- 230000000979 retarding effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
図1は本発明の一実施形態に係るマイクロ波プラズマ処理装置の概略構成を示す断面図である。図1のマイクロ波プラズマ処理装置は、RLSA(登録商標)マイクロ波プラズマ処理装置等の、スロットアンテナを用いたマイクロ波プラズマ処理装置であり、絶縁膜、例えばSiN等の窒化膜する際のプラズマ処理を行う装置として構成されている。
次に、このように構成されるマイクロ波プラズマ処理装置100の動作について説明する。
本実施形態では、ソリッドステートアンプ46として周波数変調機能を有するものを用いており、例えば、中心周波数が2450MHzに対して2400〜2500MHzの間で周波数を変化させることができる。このように周波数を変化させることによりスロットアンテナ31のスロット32から放射されるマイクロ波の放射特性が変化し、スロット32から放射される電界の分布を変化させることができる。このように電界分布が変化すると、これにともなってプラズマ密度分布も変化する。このため、マイクロ波の周波数を変化させることにより、プラズマ密度分布を制御することができ、マイクロ波パワーやガス条件等によりプラズマ密度分布がスロットパターンにより狙った分布からずれたとしても、これを所望のプラズマ密度分布に向けて高精度で制御することができる。例えば、プラズマ密度が均一になるように設定したスロットパターンでプラズマ密度に不均一が生じた場合に、このような制御により、高精度で均一化することができる。
次に、本発明を検証した実験について説明する。
まず、電磁シミュレーションにより、マイクロ波プラズマ装置においてマイクロ波周波数を変化させた際のマイクロ波透過板下面の電界分布を求めた。図2は各周波数での電界強度分布を示す図である。図2では、白色側が電界強度が高く、黒色側が電界強度が低いことを示している。
ここでは、プラズマ密度分布をモニタするモニタ手段として、アンテナ部のチャンバー外部中央に対応する同軸導波管のテーパーコネクタに温度検出器として熱電対を設け、天板下面の中央の温度との相関を求めた。ここでは、チャンバー内圧力を2Torr、マイクロ波パワーを2000Wとし、ガス系を、図6の実験と同様、2種類の組成比(No.1,No.2)のアルゴン混合ガスとし、マイクロ波周波数を変化させた。その際の天板下面の温度分布測定結果と、テーパーコネクタ温度およびIRによる天板センター温度(IRセンター温度)を図7に示す。この図に示すように、マイクロ波パワーを固定し、マイクロ波周波数を変化させることにより天板下面の温度分布(プラズマ密度分布)を変化させると、テーパーコネクタ温度は、IRセンター温度とともに変動することが確認された。その際のこれらの関係を図8に示すが、テーパーコネクタ温度とIRセンター温度との間に強い相関関係が見られた。なお、同様に、アンテナ部のチャンバー外部の端部に対応する位置に熱電対を設けることによって、天板下面端部の温度をモニタすることができる。
以上、添付図面を参照して本発明の実施形態について説明したが、本発明は、上記の実施の形態に限定されることなく、本発明の思想の範囲内において種々変形可能である。
2;サセプタ
5;ヒーター
24;排気機構
28;マイクロ波透過板
30;アンテナ部
31;スロットアンテナ
32;スロット
33;遅波材
37;同軸導波管
38;モード変換器
39;導波管
40;マイクロ波発生器
41;チューナ
42;スタブ部材
43;テーパーコネクタ
45;シグナルジェネレータ
46;ソリッドステートアンプ
50;周波数制御器
51;第1熱電対
52;第2熱電対
60;ガス供給機構
70;全体制御部
100;マイクロ波プラズマ処理装置
W;半導体ウエハ(被処理体)
Claims (16)
- チャンバー内にマイクロ波を放射して前記チャンバー内にマイクロ波プラズマを生成するマイクロ波プラズマ源であって、
マイクロ波を発振するとともに、マイクロ波の発振周波数が可変のマイクロ波発振器と、
前記マイクロ波発振器で発振されたマイクロ波を伝播する導波路と、
前記導波路を伝播したマイクロ波を前記チャンバー内に放射する、所定パターンのスロットが形成されたスロットアンテナ、および前記チャンバーの天板を構成し、前記スロットから放射されたマイクロ波を透過する誘電体からなるマイクロ波透過板を有するアンテナ部と、
前記チャンバー内にマイクロ波プラズマが生成されているときに、前記アンテナ部の前記チャンバー外における複数の位置の温度を検出する複数の温度検出器と、
前記複数の温度検出器の検出信号が入力され、該検出信号に基づいて、前記チャンバー内のプラズマ密度分布が所望の分布になるように、前記マイクロ波発振器の発振周波数を制御する周波数制御器と
を有することを特徴とするマイクロ波プラズマ源。 - 前記複数の温度検出器は、前記アンテナ部の中央部と前記アンテナ部の端部にそれぞれ設けられることを特徴とする請求項1に記載のマイクロ波プラズマ源。
- 前記導波路は、前記マイクロ波発振器で発生されたマイクロ波をTEモードで伝播する導波管と、前記導波管から導かれたマイクロ波の伝播モードをTEモードからTEMモードに変換するモード変換器と、前記モード変換器でTEMモードに変換されたマイクロ波を前記アンテナ部に導く同軸導波管とを有することを特徴とする請求項2に記載のマイクロ波プラズマ源。
- 前記同軸導波管の内導体の下端部には、前記アンテナ部の一部となるテーパーコネクタを有し、前記テーパーコネクタに前記中央部の温度検出器が設けられていることを特徴とする請求項3に記載のマイクロ波プラズマ源。
- 前記アンテナ部は、前記スロットアンテナの上に設けられた誘電体からなる遅波材と、前記スロットアンテナおよび前記遅波材を覆うように設けられた金属材からなるシールド蓋体とをさらに有し、前記シールド蓋体の端部に前記端部の温度検出器が設けられていることを特徴とする請求項3または請求項4に記載のマイクロ波プラズマ源。
- 前記複数の温度検出器は、熱電対であることを特徴とする請求項1から請求項5のいずれか1項に記載のマイクロ波プラズマ源。
- 前記マイクロ波発振器は、シグナルジェネレータと、前記シグナルジェネレータからの信号波形を増幅して所定パワーのマイクロ波を発振し、周波数変調機能を有するソリッドステートアンプとを有することを特徴とする請求項1から請求項6のいずれか1項に記載のマイクロ波プラズマ源。
- 被処理体が収容されるチャンバーと、
マイクロ波を発振するとともに、マイクロ波の発振周波数が可変のマイクロ波発振器と、
前記マイクロ波発振器で発振されたマイクロ波を伝播する導波路と、
前記導波路を伝播したマイクロ波を前記チャンバー内に放射する、所定パターンのスロットが形成されたスロットアンテナ、および前記スロットから放射されたマイクロ波を透過する、誘電体からなるマイクロ波透過板を有するアンテナ部と、
前記チャンバー内にマイクロ波プラズマが生成されているときに、前記アンテナ部の前記チャンバー外における複数の位置の温度を検出する複数の温度検出器と、
前記複数の温度検出器の検出信号が入力され、該検出信号に基づいて、前記チャンバー内のプラズマ密度分布が所望の分布になるように、前記マイクロ波発振器の発振周波数を制御する周波数制御器と、
前記チャンバー内にプラズマ処理のためのガスを供給するガス供給機構と、
前記チャンバー内を排気する排気機構と
を有することを特徴とするマイクロ波プラズマ処理装置。 - 前記複数の温度検出器は、前記アンテナ部の中央部と前記アンテナ部の端部にそれぞれ設けられることを特徴とする請求項8に記載のマイクロ波プラズマ処理装置。
- 前記導波路は、前記マイクロ波発振器で発生されたマイクロ波をTEモードで伝播する導波管と、前記導波管から導かれたマイクロ波の伝播モードをTEモードからTEMモードに変換するモード変換器と、前記モード変換器でTEMモードに変換されたマイクロ波を前記アンテナ部に導く同軸導波管とを有することを特徴とする請求項9に記載のマイクロ波プラズマ処理装置。
- 前記同軸導波管の内導体の下端部には、前記アンテナ部の一部となるテーパーコネクタを有し、前記テーパーコネクタに前記中央部の温度検出器が設けられていることを特徴とする請求項10に記載のマイクロ波プラズマ処理装置。
- 前記アンテナ部は、前記スロットアンテナの上に設けられた誘電体からなる遅波材と、前記スロットアンテナおよび前記遅波材を覆うように設けられた金属材からなるシールド蓋体とをさらに有し、前記シールド蓋体の端部に前記端部の温度検出器が設けられていることを特徴とする請求項10または請求項11に記載のマイクロ波プラズマ処理装置。
- 前記複数の温度検出器は、熱電対であることを特徴とする請求項8から請求項12のいずれか1項に記載のマイクロ波プラズマ処理装置。
- 前記マイクロ波発振器は、シグナルジェネレータと、前記シグナルジェネレータからの信号波形を増幅して所定パワーのマイクロ波を発振し、周波数変調機能を有するソリッドステートアンプとを有することを特徴とする請求項8から請求項13のいずれか1項に記載のマイクロ波プラズマ処理装置。
- 被処理体が収容されるチャンバーと、
マイクロ波を発振するとともに、マイクロ波の発振周波数が可変のマイクロ波発振器と、
前記マイクロ波発振器で発振されたマイクロ波を伝播する導波路と、
前記導波路を伝播したマイクロ波を前記チャンバー内に放射する、所定パターンのスロットが形成されたスロットアンテナ、および前記スロットから放射されたマイクロ波を透過する、誘電体からなるマイクロ波透過板を有するアンテナ部と、
前記チャンバー内にプラズマ処理のためのガスを供給するガス供給機構と、
前記チャンバー内を排気する排気機構とを有するマイクロ波プラズマ処理装置によりプラズマ処理を行うプラズマ処理方法であって、
前記アンテナ部の前記チャンバー外における複数の位置の温度を検出し、
その温度検出信号に基づいて、前記チャンバー内のプラズマ密度分布が所望の分布になるように、前記マイクロ波発振器の発振周波数を制御することを特徴とするプラズマ処理方法。 - 前記複数の位置は、前記アンテナ部の中央部と前記アンテナ部の端部であることを特徴とする請求項15に記載のプラズマ処理方法。
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