KR100387549B1 - 피처리기판을가열하면서처리가스를이용해반도체를처리하는방법및그장치 - Google Patents

피처리기판을가열하면서처리가스를이용해반도체를처리하는방법및그장치 Download PDF

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Publication number
KR100387549B1
KR100387549B1 KR10-1998-0703990A KR19980703990A KR100387549B1 KR 100387549 B1 KR100387549 B1 KR 100387549B1 KR 19980703990 A KR19980703990 A KR 19980703990A KR 100387549 B1 KR100387549 B1 KR 100387549B1
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KR
South Korea
Prior art keywords
substrate
processed
mounting surface
processing
wafer
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Expired - Fee Related
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KR10-1998-0703990A
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English (en)
Korean (ko)
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KR19990071713A (ko
Inventor
하루노리 우시카와
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동경 엘렉트론 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR10-1998-0703990A 1995-11-28 1996-11-25 피처리기판을가열하면서처리가스를이용해반도체를처리하는방법및그장치 Expired - Fee Related KR100387549B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP33407695 1995-11-28
JP95-334076 1995-11-28
JP20901896 1996-07-19
JP96-209018 1996-07-19

Publications (2)

Publication Number Publication Date
KR19990071713A KR19990071713A (ko) 1999-09-27
KR100387549B1 true KR100387549B1 (ko) 2003-08-19

Family

ID=26517180

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0703990A Expired - Fee Related KR100387549B1 (ko) 1995-11-28 1996-11-25 피처리기판을가열하면서처리가스를이용해반도체를처리하는방법및그장치

Country Status (5)

Country Link
US (1) US6140256A (enExample)
EP (1) EP0935281A1 (enExample)
KR (1) KR100387549B1 (enExample)
TW (1) TW308710B (enExample)
WO (1) WO1997020340A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084888A1 (fr) * 2000-04-29 2001-11-08 Ibiden Co., Ltd. Element chauffant en ceramique
EP1174910A3 (en) 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
JP2002064132A (ja) * 2000-08-22 2002-02-28 Tokyo Electron Ltd 被処理体の受け渡し方法、被処理体の載置機構及びプローブ装置
US6559039B2 (en) * 2001-05-15 2003-05-06 Applied Materials, Inc. Doped silicon deposition process in resistively heated single wafer chamber
US6672864B2 (en) * 2001-08-31 2004-01-06 Applied Materials, Inc. Method and apparatus for processing substrates in a system having high and low pressure areas
JP4244555B2 (ja) 2002-02-25 2009-03-25 東京エレクトロン株式会社 被処理体の支持機構
JP4030787B2 (ja) * 2002-03-04 2008-01-09 東京エレクトロン株式会社 基板加熱方法、基板加熱装置及び塗布、現像装置
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US20030173346A1 (en) * 2002-03-18 2003-09-18 Renken Wayne Glenn System and method for heating and cooling wafer at accelerated rates
AU2003248121A1 (en) * 2002-07-25 2004-02-16 Tokyo Electron Limited Substrate processing container
KR101018259B1 (ko) * 2002-09-10 2011-03-03 액셀리스 테크놀로지스, 인크. 일정 온도 척을 사용하여 가변 온도 프로세스로 기판을 가열하는 방법
US20040096636A1 (en) * 2002-11-18 2004-05-20 Applied Materials, Inc. Lifting glass substrate without center lift pins
US6954585B2 (en) * 2002-12-03 2005-10-11 Tokyo Electron Limited Substrate processing method and apparatus
US7651583B2 (en) * 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
US7434712B2 (en) * 2004-07-09 2008-10-14 Blackhawk Industries Product Group Unlimited Llc Hooded holster
US11587807B2 (en) * 2018-10-28 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Annealing apparatus and method thereof
CN111489949B (zh) * 2020-04-22 2023-12-22 北京北方华创微电子装备有限公司 半导体加工设备及其工艺控制方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435187A2 (en) * 1989-12-26 1991-07-03 Fujitsu Limited Method of fabricating a semiconductor device

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US34910A (en) * 1862-04-08 Improvement in piano-forte actions
JPS557008B2 (enExample) * 1972-02-29 1980-02-21
US4507078A (en) * 1983-03-28 1985-03-26 Silicon Valley Group, Inc. Wafer handling apparatus and method
JPS6130237U (ja) * 1984-07-26 1986-02-24 日立電子エンジニアリング株式会社 ウエハ処理装置のウエハロ−ド機構
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
JPH0353076A (ja) * 1989-07-17 1991-03-07 Fuji Electric Co Ltd Ｃｖｄ装置の半導体基板加熱制御機構
US5108597A (en) 1990-03-22 1992-04-28 Regents Of The University Of Minnesota Carbon-clad zirconium oxide particles
JPH0459131U (enExample) * 1990-09-25 1992-05-21
US5411654A (en) * 1993-07-02 1995-05-02 Massachusetts Institute Of Technology Method of maximizing anharmonic oscillations in deuterated alloys
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JP3052116B2 (ja) * 1994-10-26 2000-06-12 東京エレクトロン株式会社 熱処理装置
JP3276553B2 (ja) * 1995-01-19 2002-04-22 東京エレクトロン株式会社 処理装置及び処理方法
JPH08236533A (ja) * 1995-02-24 1996-09-13 Toshiba Corp ウエハ加熱冷却装置
US5697427A (en) * 1995-12-22 1997-12-16 Applied Materials, Inc. Apparatus and method for cooling a substrate
US5837555A (en) * 1996-04-12 1998-11-17 Ast Electronik Apparatus and method for rapid thermal processing
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus

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Publication number Priority date Publication date Assignee Title
EP0435187A2 (en) * 1989-12-26 1991-07-03 Fujitsu Limited Method of fabricating a semiconductor device

Also Published As

Publication number Publication date
WO1997020340A1 (en) 1997-06-05
EP0935281A4 (enExample) 1999-08-11
US6140256A (en) 2000-10-31
KR19990071713A (ko) 1999-09-27
EP0935281A1 (en) 1999-08-11
TW308710B (enExample) 1997-06-21

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