KR100383504B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100383504B1
KR100383504B1 KR10-2000-0068722A KR20000068722A KR100383504B1 KR 100383504 B1 KR100383504 B1 KR 100383504B1 KR 20000068722 A KR20000068722 A KR 20000068722A KR 100383504 B1 KR100383504 B1 KR 100383504B1
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KR
South Korea
Prior art keywords
pattern
oxide film
region
dummy
semiconductor device
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Expired - Lifetime
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KR10-2000-0068722A
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English (en)
Korean (ko)
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KR20010060349A (ko
Inventor
도미따가즈오
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20010060349A publication Critical patent/KR20010060349A/ko
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Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 미쓰비시덴키 가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions

Landscapes

  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR10-2000-0068722A 1999-12-15 2000-11-18 반도체 장치 및 그 제조 방법 Expired - Lifetime KR100383504B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35564599A JP4836304B2 (ja) 1999-12-15 1999-12-15 半導体装置
JP1999-355645 1999-12-15

Publications (2)

Publication Number Publication Date
KR20010060349A KR20010060349A (ko) 2001-07-06
KR100383504B1 true KR100383504B1 (ko) 2003-05-12

Family

ID=18445043

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0068722A Expired - Lifetime KR100383504B1 (ko) 1999-12-15 2000-11-18 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
US (9) US6521969B1 (https=)
JP (1) JP4836304B2 (https=)
KR (1) KR100383504B1 (https=)
TW (1) TW522509B (https=)

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JP2002158278A (ja) 2000-11-20 2002-05-31 Hitachi Ltd 半導体装置およびその製造方法ならびに設計方法
KR100753390B1 (ko) * 2001-12-15 2007-08-30 매그나칩 반도체 유한회사 산화막 연마 공정의 두께 모니터링 패턴
JP4229617B2 (ja) 2002-02-04 2009-02-25 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその設計方法
US6667531B1 (en) * 2002-08-29 2003-12-23 Micron Technology, Inc. Method and apparatus for a deposited fill layer
DE10245159B4 (de) * 2002-09-27 2006-10-12 Infineon Technologies Ag Photomaske, insbesondere alternierende Phasenmaske, mit Kompensationsstruktur
JP2004265989A (ja) 2003-02-28 2004-09-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4198502B2 (ja) * 2003-03-28 2008-12-17 富士通マイクロエレクトロニクス株式会社 パターン発生方法
EP1505653A1 (en) * 2003-08-04 2005-02-09 STMicroelectronics S.r.l. Layout method for dummy structures and corresponding integrated circuit
US7071074B2 (en) * 2003-09-24 2006-07-04 Infineon Technologies Ag Structure and method for placement, sizing and shaping of dummy structures
KR100712996B1 (ko) 2005-09-20 2007-05-02 주식회사 하이닉스반도체 패턴더미를 갖는 반도체소자 및 패턴더미를 이용한반도체소자의 제조방법
JP2007250705A (ja) * 2006-03-15 2007-09-27 Nec Electronics Corp 半導体集積回路装置及びダミーパターンの配置方法
US8741743B2 (en) * 2007-01-05 2014-06-03 Freescale Semiconductor, Inc. Integrated assist features for epitaxial growth
JP2008226935A (ja) * 2007-03-09 2008-09-25 Fujitsu Ltd 半導体装置の製造方法
JP2008235350A (ja) * 2007-03-16 2008-10-02 Matsushita Electric Ind Co Ltd 半導体集積回路
KR100939425B1 (ko) * 2008-01-14 2010-01-28 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP5415710B2 (ja) * 2008-04-10 2014-02-12 ルネサスエレクトロニクス株式会社 半導体装置
KR101468027B1 (ko) 2008-06-12 2014-12-03 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
JP4786697B2 (ja) * 2008-11-17 2011-10-05 ルネサスエレクトロニクス株式会社 半導体装置
JP2009060143A (ja) * 2008-12-01 2009-03-19 Renesas Technology Corp 半導体装置
JP5489791B2 (ja) * 2010-03-10 2014-05-14 三菱電機株式会社 電力用半導体装置の製造方法
JP5554736B2 (ja) * 2011-03-09 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置
US8597860B2 (en) 2011-05-20 2013-12-03 United Microelectronics Corp. Dummy patterns and method for generating dummy patterns
JP2012004592A (ja) * 2011-08-31 2012-01-05 Renesas Electronics Corp 半導体装置の製造方法
US10026656B2 (en) * 2011-12-06 2018-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate features of semiconductor die
US9274413B2 (en) 2013-09-11 2016-03-01 United Microelectronics Corp. Method for forming layout pattern
US12040238B2 (en) * 2013-11-12 2024-07-16 Skyworks Solutions, Inc. Radio-frequency switching devices having improved voltage handling capability
CN106340540B (zh) * 2015-07-07 2020-09-01 联华电子股份有限公司 半导体元件及填补图案的方法
TWI758408B (zh) * 2018-02-09 2022-03-21 聯華電子股份有限公司 半導體結構
CN112885781B (zh) * 2019-11-29 2022-06-24 长鑫存储技术有限公司 有源区的制备方法及半导体器件

Citations (1)

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KR19980050146A (ko) * 1996-12-20 1998-09-15 김영환 반도체 소자의 미세패턴 형성방법

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US4949162A (en) * 1987-06-05 1990-08-14 Hitachi, Ltd. Semiconductor integrated circuit with dummy pedestals
JP2874486B2 (ja) * 1991-11-29 1999-03-24 ソニー株式会社 ポリッシュ工程を備えたトレンチアイソレーションの形成方法及び半導体装置の製造方法
JP3128205B2 (ja) * 1996-03-14 2001-01-29 松下電器産業株式会社 平坦化パターンの生成方法、平坦化パターンの生成装置及び半導体集積回路装置
US5902752A (en) 1996-05-16 1999-05-11 United Microelectronics Corporation Active layer mask with dummy pattern
JPH1050146A (ja) 1996-08-02 1998-02-20 Amp Japan Ltd 偏平ケーブル及び偏平ケーブル用コネクタ
US5885856A (en) * 1996-08-21 1999-03-23 Motorola, Inc. Integrated circuit having a dummy structure and method of making
TW334614B (en) 1997-03-04 1998-06-21 Winbond Electronics Corp The method of forming shallow trench isolation
US5911110A (en) 1997-10-28 1999-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming shallow trench isolation with dummy pattern in reverse tone mask
US6281049B1 (en) * 1998-01-14 2001-08-28 Hyundai Electronics Industries Co., Ltd. Semiconductor device mask and method for forming the same
US6020616A (en) 1998-03-31 2000-02-01 Vlsi Technology, Inc. Automated design of on-chip capacitive structures for suppressing inductive noise
JP3555074B2 (ja) * 1999-11-17 2004-08-18 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980050146A (ko) * 1996-12-20 1998-09-15 김영환 반도체 소자의 미세패턴 형성방법

Also Published As

Publication number Publication date
US20050206006A1 (en) 2005-09-22
US20030102562A1 (en) 2003-06-05
JP2001176959A (ja) 2001-06-29
TW522509B (en) 2003-03-01
US20090072345A1 (en) 2009-03-19
KR20010060349A (ko) 2001-07-06
US7550815B2 (en) 2009-06-23
US20080283961A1 (en) 2008-11-20
US8569145B2 (en) 2013-10-29
US20130040434A1 (en) 2013-02-14
US6905942B2 (en) 2005-06-14
US20110012225A1 (en) 2011-01-20
JP4836304B2 (ja) 2011-12-14
US20090072346A1 (en) 2009-03-19
US6521969B1 (en) 2003-02-18
US7719078B2 (en) 2010-05-18
US7304365B2 (en) 2007-12-04
US20110012224A1 (en) 2011-01-20
US7825489B2 (en) 2010-11-02

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