KR100377490B1 - 비휘발성 반도체 기억 장치 - Google Patents

비휘발성 반도체 기억 장치 Download PDF

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Publication number
KR100377490B1
KR100377490B1 KR10-2000-0074918A KR20000074918A KR100377490B1 KR 100377490 B1 KR100377490 B1 KR 100377490B1 KR 20000074918 A KR20000074918 A KR 20000074918A KR 100377490 B1 KR100377490 B1 KR 100377490B1
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KR
South Korea
Prior art keywords
circuit
error correction
information data
correction code
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0074918A
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English (en)
Korean (ko)
Other versions
KR20010070291A (ko
Inventor
가사이다까미찌
가사이노조미
Original Assignee
가부시끼가이샤 도시바
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Publication of KR20010070291A publication Critical patent/KR20010070291A/ko
Application granted granted Critical
Publication of KR100377490B1 publication Critical patent/KR100377490B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Detection And Correction Of Errors (AREA)
KR10-2000-0074918A 1999-12-09 2000-12-09 비휘발성 반도체 기억 장치 Expired - Fee Related KR100377490B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35065599A JP2001167596A (ja) 1999-12-09 1999-12-09 不揮発性半導体記憶装置
JP1999-350655 1999-12-09

Publications (2)

Publication Number Publication Date
KR20010070291A KR20010070291A (ko) 2001-07-25
KR100377490B1 true KR100377490B1 (ko) 2003-03-26

Family

ID=18411967

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0074918A Expired - Fee Related KR100377490B1 (ko) 1999-12-09 2000-12-09 비휘발성 반도체 기억 장치

Country Status (2)

Country Link
JP (1) JP2001167596A (enExample)
KR (1) KR100377490B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4704078B2 (ja) * 2004-12-20 2011-06-15 富士通セミコンダクター株式会社 半導体メモリ
US7437653B2 (en) * 2004-12-22 2008-10-14 Sandisk Corporation Erased sector detection mechanisms
JP5134569B2 (ja) * 2009-02-23 2013-01-30 ラピスセミコンダクタ株式会社 メモリ装置
US8370702B2 (en) * 2009-06-10 2013-02-05 Micron Technology, Inc. Error correcting codes for increased storage capacity in multilevel memory devices
JP5153895B2 (ja) * 2011-01-12 2013-02-27 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置の書込方法
JP6018508B2 (ja) * 2013-01-09 2016-11-02 エスアイアイ・セミコンダクタ株式会社 不揮発性半導体記憶装置及びそのテスト方法
JP6405612B2 (ja) * 2013-10-03 2018-10-17 富士通セミコンダクター株式会社 強誘電体メモリ装置及びメモリ書き込み方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132500A (ja) * 1983-01-19 1984-07-30 Nec Corp ２ビツト誤り訂正方式
JP2745252B2 (ja) * 1991-06-24 1998-04-28 三菱電機株式会社 半導体記憶装置
JPH08137763A (ja) * 1994-11-04 1996-05-31 Fujitsu Ltd フラッシュメモリ制御装置
JP2908272B2 (ja) * 1995-03-22 1999-06-21 甲府日本電気株式会社 情報処理装置
JPH11242899A (ja) * 1997-11-14 1999-09-07 Nec Ic Microcomput Syst Ltd 半導体記憶回路

Also Published As

Publication number Publication date
KR20010070291A (ko) 2001-07-25
JP2001167596A (ja) 2001-06-22

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