JP2001167596A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JP2001167596A
JP2001167596A JP35065599A JP35065599A JP2001167596A JP 2001167596 A JP2001167596 A JP 2001167596A JP 35065599 A JP35065599 A JP 35065599A JP 35065599 A JP35065599 A JP 35065599A JP 2001167596 A JP2001167596 A JP 2001167596A
Authority
JP
Japan
Prior art keywords
circuit
check
error correction
information data
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35065599A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001167596A5 (enExample
Inventor
Hisamichi Kasai
央倫 葛西
Nozomi Nishimura
望 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP35065599A priority Critical patent/JP2001167596A/ja
Priority to US09/732,478 priority patent/US6331948B2/en
Priority to KR10-2000-0074918A priority patent/KR100377490B1/ko
Publication of JP2001167596A publication Critical patent/JP2001167596A/ja
Publication of JP2001167596A5 publication Critical patent/JP2001167596A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Detection And Correction Of Errors (AREA)
JP35065599A 1999-12-09 1999-12-09 不揮発性半導体記憶装置 Pending JP2001167596A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP35065599A JP2001167596A (ja) 1999-12-09 1999-12-09 不揮発性半導体記憶装置
US09/732,478 US6331948B2 (en) 1999-12-09 2000-12-07 Error correcting circuit for making efficient error correction, and involatile semiconductor memory device incorporating the same error correcting circuit
KR10-2000-0074918A KR100377490B1 (ko) 1999-12-09 2000-12-09 비휘발성 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35065599A JP2001167596A (ja) 1999-12-09 1999-12-09 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2001167596A true JP2001167596A (ja) 2001-06-22
JP2001167596A5 JP2001167596A5 (enExample) 2006-11-24

Family

ID=18411967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35065599A Pending JP2001167596A (ja) 1999-12-09 1999-12-09 不揮発性半導体記憶装置

Country Status (2)

Country Link
JP (1) JP2001167596A (enExample)
KR (1) KR100377490B1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202457A (ja) * 2004-12-20 2006-08-03 Fujitsu Ltd 半導体メモリ
JP2008525937A (ja) * 2004-12-22 2008-07-17 サンディスク コーポレイション 消去されたセクタの検出メカニズム
JP2010198657A (ja) * 2009-02-23 2010-09-09 Oki Semiconductor Co Ltd メモリ装置
JP2010287305A (ja) * 2009-06-10 2010-12-24 Numonyx Bv 多値レベルメモリデバイスにおける増大した記憶容量のための誤り訂正符号
JP2011070768A (ja) * 2011-01-12 2011-04-07 Renesas Electronics Corp 不揮発性半導体記憶装置の書込方法
WO2014109107A1 (ja) * 2013-01-09 2014-07-17 セイコーインスツル株式会社 不揮発性半導体記憶装置及びそのテスト方法
JP2015072727A (ja) * 2013-10-03 2015-04-16 富士通セミコンダクター株式会社 強誘電体メモリ装置及びメモリ書き込み方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0241057B2 (enExample) * 1983-01-19 1990-09-14 Nippon Electric Co
JPH052898A (ja) * 1991-06-24 1993-01-08 Mitsubishi Electric Corp 半導体記憶装置
JPH08137763A (ja) * 1994-11-04 1996-05-31 Fujitsu Ltd フラッシュメモリ制御装置
JPH08263391A (ja) * 1995-03-22 1996-10-11 Kofu Nippon Denki Kk 情報処理装置
JPH11242899A (ja) * 1997-11-14 1999-09-07 Nec Ic Microcomput Syst Ltd 半導体記憶回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0241057B2 (enExample) * 1983-01-19 1990-09-14 Nippon Electric Co
JPH052898A (ja) * 1991-06-24 1993-01-08 Mitsubishi Electric Corp 半導体記憶装置
JPH08137763A (ja) * 1994-11-04 1996-05-31 Fujitsu Ltd フラッシュメモリ制御装置
JPH08263391A (ja) * 1995-03-22 1996-10-11 Kofu Nippon Denki Kk 情報処理装置
JPH11242899A (ja) * 1997-11-14 1999-09-07 Nec Ic Microcomput Syst Ltd 半導体記憶回路

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202457A (ja) * 2004-12-20 2006-08-03 Fujitsu Ltd 半導体メモリ
JP2008525937A (ja) * 2004-12-22 2008-07-17 サンディスク コーポレイション 消去されたセクタの検出メカニズム
JP2010198657A (ja) * 2009-02-23 2010-09-09 Oki Semiconductor Co Ltd メモリ装置
US8397132B2 (en) 2009-02-23 2013-03-12 Oki Semiconductor Co., Ltd. Memory device
JP2010287305A (ja) * 2009-06-10 2010-12-24 Numonyx Bv 多値レベルメモリデバイスにおける増大した記憶容量のための誤り訂正符号
US8370702B2 (en) 2009-06-10 2013-02-05 Micron Technology, Inc. Error correcting codes for increased storage capacity in multilevel memory devices
US8745463B2 (en) 2009-06-10 2014-06-03 Micron Technology, Inc. Error correcting codes for increased storage capacity in multilevel memory devices
JP2011070768A (ja) * 2011-01-12 2011-04-07 Renesas Electronics Corp 不揮発性半導体記憶装置の書込方法
WO2014109107A1 (ja) * 2013-01-09 2014-07-17 セイコーインスツル株式会社 不揮発性半導体記憶装置及びそのテスト方法
US9875154B2 (en) 2013-01-09 2018-01-23 Sii Semiconductor Corporation Non-volatile semiconductor storage device and method of testing the same
JP2015072727A (ja) * 2013-10-03 2015-04-16 富士通セミコンダクター株式会社 強誘電体メモリ装置及びメモリ書き込み方法

Also Published As

Publication number Publication date
KR20010070291A (ko) 2001-07-25
KR100377490B1 (ko) 2003-03-26

Similar Documents

Publication Publication Date Title
CN110580927B (zh) 可变电阻随机存取存储器
US10459794B2 (en) Memory systems having extended product lifetime and methods of operating the same
KR100996009B1 (ko) 불휘발성 메모리 소자 및 그 동작 방법
US6917547B2 (en) Non-volatile semiconductor memory device
US8732553B2 (en) Memory system and control method thereof
US8832526B2 (en) Data reading method, memory controller, and memory storage device
JP4135680B2 (ja) 半導体記憶装置および信号処理システム
JP5303325B2 (ja) データ処理装置
US20110119436A1 (en) Flash memory system and data writing method thereof
CN103871447B (zh) 与非门快闪存储器阵列及芯片及其存取、读取及管理方法
US9543983B2 (en) Decoding method, memory storage device and memory control circuit unit
US20100205504A1 (en) Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process
JP7018089B2 (ja) 半導体記憶装置および読出し方法
TW201637019A (zh) 讀取電壓準位估測方法、記憶體儲存裝置及記憶體控制電路單元
US10514980B2 (en) Encoding method and memory storage apparatus using the same
US6331948B2 (en) Error correcting circuit for making efficient error correction, and involatile semiconductor memory device incorporating the same error correcting circuit
US11704055B2 (en) Storage device, controller and method for operating thereof
US7886211B2 (en) Memory controller
JP2000348497A (ja) 半導体記憶装置
JP2001167596A (ja) 不揮発性半導体記憶装置
US10937495B2 (en) Resistive memory apparatus and method for writing data thereof
KR20080114208A (ko) 에러 정정 기능을 갖는 불휘발성 메모리 장치의 카피투프로그램방법
TWI910940B (zh) 執行瞬間斷電恢復處理的方法及電腦程式產品及裝置
JP7679526B1 (ja) Ｎｏｒ型フラッシュメモリおよびその動作方法
JP4582078B2 (ja) メモリコントローラ及びフラッシュメモリシステム、並びにフラッシュメモリの制御方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061004

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061004

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090904

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090929

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100810

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101207