JP2001167596A5 - - Google Patents
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- Publication number
- JP2001167596A5 JP2001167596A5 JP1999350655A JP35065599A JP2001167596A5 JP 2001167596 A5 JP2001167596 A5 JP 2001167596A5 JP 1999350655 A JP1999350655 A JP 1999350655A JP 35065599 A JP35065599 A JP 35065599A JP 2001167596 A5 JP2001167596 A5 JP 2001167596A5
- Authority
- JP
- Japan
- Prior art keywords
- error correction
- correction code
- circuit
- information data
- inspection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007689 inspection Methods 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 3
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35065599A JP2001167596A (ja) | 1999-12-09 | 1999-12-09 | 不揮発性半導体記憶装置 |
| US09/732,478 US6331948B2 (en) | 1999-12-09 | 2000-12-07 | Error correcting circuit for making efficient error correction, and involatile semiconductor memory device incorporating the same error correcting circuit |
| KR10-2000-0074918A KR100377490B1 (ko) | 1999-12-09 | 2000-12-09 | 비휘발성 반도체 기억 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35065599A JP2001167596A (ja) | 1999-12-09 | 1999-12-09 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001167596A JP2001167596A (ja) | 2001-06-22 |
| JP2001167596A5 true JP2001167596A5 (enExample) | 2006-11-24 |
Family
ID=18411967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35065599A Pending JP2001167596A (ja) | 1999-12-09 | 1999-12-09 | 不揮発性半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2001167596A (enExample) |
| KR (1) | KR100377490B1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4704078B2 (ja) * | 2004-12-20 | 2011-06-15 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| US7437653B2 (en) * | 2004-12-22 | 2008-10-14 | Sandisk Corporation | Erased sector detection mechanisms |
| JP5134569B2 (ja) * | 2009-02-23 | 2013-01-30 | ラピスセミコンダクタ株式会社 | メモリ装置 |
| US8370702B2 (en) * | 2009-06-10 | 2013-02-05 | Micron Technology, Inc. | Error correcting codes for increased storage capacity in multilevel memory devices |
| JP5153895B2 (ja) * | 2011-01-12 | 2013-02-27 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置の書込方法 |
| JP6018508B2 (ja) * | 2013-01-09 | 2016-11-02 | エスアイアイ・セミコンダクタ株式会社 | 不揮発性半導体記憶装置及びそのテスト方法 |
| JP6405612B2 (ja) * | 2013-10-03 | 2018-10-17 | 富士通セミコンダクター株式会社 | 強誘電体メモリ装置及びメモリ書き込み方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132500A (ja) * | 1983-01-19 | 1984-07-30 | Nec Corp | 2ビツト誤り訂正方式 |
| JP2745252B2 (ja) * | 1991-06-24 | 1998-04-28 | 三菱電機株式会社 | 半導体記憶装置 |
| JPH08137763A (ja) * | 1994-11-04 | 1996-05-31 | Fujitsu Ltd | フラッシュメモリ制御装置 |
| JP2908272B2 (ja) * | 1995-03-22 | 1999-06-21 | 甲府日本電気株式会社 | 情報処理装置 |
| JPH11242899A (ja) * | 1997-11-14 | 1999-09-07 | Nec Ic Microcomput Syst Ltd | 半導体記憶回路 |
-
1999
- 1999-12-09 JP JP35065599A patent/JP2001167596A/ja active Pending
-
2000
- 2000-12-09 KR KR10-2000-0074918A patent/KR100377490B1/ko not_active Expired - Fee Related
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