KR100358307B1 - 이종접합 바이폴라 소자 - Google Patents
이종접합 바이폴라 소자 Download PDFInfo
- Publication number
- KR100358307B1 KR100358307B1 KR1020010001286A KR20010001286A KR100358307B1 KR 100358307 B1 KR100358307 B1 KR 100358307B1 KR 1020010001286 A KR1020010001286 A KR 1020010001286A KR 20010001286 A KR20010001286 A KR 20010001286A KR 100358307 B1 KR100358307 B1 KR 100358307B1
- Authority
- KR
- South Korea
- Prior art keywords
- base
- field oxide
- emitter
- metal electrode
- epitaxial layer
- Prior art date
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 description 25
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (3)
- 반도체 기판;상기 기판 상에 성장된 에피택셜층;상기 에피택셜층 상의 소자분리영역에 형성된 제 1 필드산화막;상기 에피택셜층 상의 액티브영역에 형성된 다수의 제 2 필드산화막;상기 결과물 상에 형성된 박막 형상의 베이스;상기 액티브영역 상의 상기 베이스 위에 형성된 도전막 재질의 에미터;상기 에미터에 개별 접속된 제 1 금속전극; 및상기 제 1, 제 2 필드 산화막 상의 상기 베이스에 개별 접속된 제 2 금속전극을 포함하는 것을 특징으로 하는 이종접합 바이폴라 소자
- 제 1항에 있어서, 상기 베이스는 SiGe 재질로 이루어진 것을 특징으로 하는 이종접합 바이폴라 소자.
- 제 1항에 있어서, 상기 에미터는 불순물이 도핑된 폴리실리콘 재질로 이루어진 것을 특징으로 하는 이종접합 바이폴라 소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010001286A KR100358307B1 (ko) | 2001-01-10 | 2001-01-10 | 이종접합 바이폴라 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010001286A KR100358307B1 (ko) | 2001-01-10 | 2001-01-10 | 이종접합 바이폴라 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020060296A KR20020060296A (ko) | 2002-07-18 |
KR100358307B1 true KR100358307B1 (ko) | 2002-10-25 |
Family
ID=27691243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010001286A KR100358307B1 (ko) | 2001-01-10 | 2001-01-10 | 이종접합 바이폴라 소자 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100358307B1 (ko) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910001882A (ko) * | 1989-06-27 | 1991-01-31 | 금성일렉트론 주식회사 | 적층 고주파 바이폴라 접합 트랜지스터 제조방법 |
JPH03227023A (ja) * | 1990-01-31 | 1991-10-08 | Nec Corp | バイポーラ・トランジスタの製造方法 |
US5557118A (en) * | 1993-12-20 | 1996-09-17 | Nec Corporation | Hetero-junction type bipolar transistor |
WO1996029740A1 (en) * | 1995-03-17 | 1996-09-26 | Hitachi, Ltd. | Semiconductor device and production method therefor |
JPH11260829A (ja) * | 1998-03-13 | 1999-09-24 | Hitachi Ltd | 半導体装置及びその製造方法 |
-
2001
- 2001-01-10 KR KR1020010001286A patent/KR100358307B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910001882A (ko) * | 1989-06-27 | 1991-01-31 | 금성일렉트론 주식회사 | 적층 고주파 바이폴라 접합 트랜지스터 제조방법 |
JPH03227023A (ja) * | 1990-01-31 | 1991-10-08 | Nec Corp | バイポーラ・トランジスタの製造方法 |
US5557118A (en) * | 1993-12-20 | 1996-09-17 | Nec Corporation | Hetero-junction type bipolar transistor |
WO1996029740A1 (en) * | 1995-03-17 | 1996-09-26 | Hitachi, Ltd. | Semiconductor device and production method therefor |
JPH11260829A (ja) * | 1998-03-13 | 1999-09-24 | Hitachi Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20020060296A (ko) | 2002-07-18 |
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