KR100358144B1 - 아날로그 소자의 제조 방법 - Google Patents
아날로그 소자의 제조 방법 Download PDFInfo
- Publication number
- KR100358144B1 KR100358144B1 KR1020000086559A KR20000086559A KR100358144B1 KR 100358144 B1 KR100358144 B1 KR 100358144B1 KR 1020000086559 A KR1020000086559 A KR 1020000086559A KR 20000086559 A KR20000086559 A KR 20000086559A KR 100358144 B1 KR100358144 B1 KR 100358144B1
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon
- film
- forming
- silicide
- semiconductor substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 77
- 229920005591 polysilicon Polymers 0.000 claims abstract description 77
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011229 interlayer Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (5)
- 아날로그 소자의 제조 방법에 있어서,반도체기판상에 제 1 폴리실리콘, 유전막을 순차적으로 형성하는 단계;상기 유전막과 제 1 폴리실리콘을 선택적으로 식각하여 폴리실리콘저항과 유전막패턴의 적층막을 형성하는 단계;상기 반도체기판의 전면에 제 2 폴리실리콘을 형성하는 단계;상기 제 2 폴리실리콘을 선택적으로 식각하여 상기 반도체 기판상에 게이트전극을 형성하는 단계;상기 게이트전극상에 제 1 실리사이드막을 형성하는 단계;상기 게이트전극을 포함한 전면에 층간절연막을 형성하는 단계;상기 층간절연막과 유전막패턴을 선택적으로 식각하여 상기 폴리실리콘저항의 소정 부분만을 노출시키는 단계; 및상기 노출된 폴리실리콘저항상에 제 2 실리사이드막을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 아날로그 소자의 제조 방법.
- 제 1 항에 있어서,상기 폴리실리콘저항의 소정 부분을 노출시키는 단계는,상기 층간절연막상에 감광막을 도포하고 노광 및 현상으로 패터닝하는 단계;상기 패터닝된 감광막을 마스크로 이용하여 상기 층간절연막과 유전막패턴을 식각하는 단계를 포함하여 이루어짐을 특징으로 하는 아날로그 소자의 제조 방법.
- 제 1 항에 있어서,상기 제 2 실리사이드막 형성후,상기 제 2 실리사이드막과 제 1 실리사이드막에 접속되는 금속배선을 형성하는 단계를 더 포함하여 이루어짐을 특징으로 하는 아날로그 소자의 제조 방법.
- 제 1 항에 있어서,상기 제 1 제 2 실리사이드막은 동일한 실리사이드막인 것을 특징으로 하는 아날로그 소자의 제조 방법.
- 제 1 항에 있어서,상기 제 2 실리사이드막 형성후,상기 폴리실리콘저항상에 상기 유전막패턴의 소정 부분이 잔류하는 것을 특징으로 하는 아날로그 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000086559A KR100358144B1 (ko) | 2000-12-30 | 2000-12-30 | 아날로그 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000086559A KR100358144B1 (ko) | 2000-12-30 | 2000-12-30 | 아날로그 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020058453A KR20020058453A (ko) | 2002-07-12 |
KR100358144B1 true KR100358144B1 (ko) | 2002-10-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000086559A KR100358144B1 (ko) | 2000-12-30 | 2000-12-30 | 아날로그 소자의 제조 방법 |
Country Status (1)
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KR (1) | KR100358144B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102938365B (zh) * | 2012-11-30 | 2017-02-08 | 上海华虹宏力半导体制造有限公司 | 多晶硅电阻器结构及其制造方法、多晶硅电阻器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04218956A (ja) * | 1990-02-23 | 1992-08-10 | Centre Natl Etud Telecommun (Ptt) | 局所的珪化物内部接続ラインを用いた速いアナログチップ用の集積回路製造法 |
US5780333A (en) * | 1996-06-29 | 1998-07-14 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating an analog semiconductor device having a salicide layer |
KR19990047737A (ko) * | 1997-12-05 | 1999-07-05 | 구본준 | 반도체소자 및 이의 제조방법 |
KR19990080726A (ko) * | 1998-04-21 | 1999-11-15 | 김영환 | 아날로그 반도체 소자 제조방법 |
US6069036A (en) * | 1995-12-30 | 2000-05-30 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating semiconductor device |
US6103622A (en) * | 1997-12-15 | 2000-08-15 | Taiwan Semiconductor Manufacturing | Silicide process for mixed mode product with dual layer capacitor and polysilicon resistor which is protected with a capacitor protective oxide during silicidation of FET device |
-
2000
- 2000-12-30 KR KR1020000086559A patent/KR100358144B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04218956A (ja) * | 1990-02-23 | 1992-08-10 | Centre Natl Etud Telecommun (Ptt) | 局所的珪化物内部接続ラインを用いた速いアナログチップ用の集積回路製造法 |
US6069036A (en) * | 1995-12-30 | 2000-05-30 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating semiconductor device |
US5780333A (en) * | 1996-06-29 | 1998-07-14 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating an analog semiconductor device having a salicide layer |
KR19990047737A (ko) * | 1997-12-05 | 1999-07-05 | 구본준 | 반도체소자 및 이의 제조방법 |
US6103622A (en) * | 1997-12-15 | 2000-08-15 | Taiwan Semiconductor Manufacturing | Silicide process for mixed mode product with dual layer capacitor and polysilicon resistor which is protected with a capacitor protective oxide during silicidation of FET device |
KR19990080726A (ko) * | 1998-04-21 | 1999-11-15 | 김영환 | 아날로그 반도체 소자 제조방법 |
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KR20020058453A (ko) | 2002-07-12 |
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