KR100312368B1 - 화합물반도체집적회로및이것을사용하는광재생중계기 - Google Patents
화합물반도체집적회로및이것을사용하는광재생중계기 Download PDFInfo
- Publication number
- KR100312368B1 KR100312368B1 KR1019930004812A KR930004812A KR100312368B1 KR 100312368 B1 KR100312368 B1 KR 100312368B1 KR 1019930004812 A KR1019930004812 A KR 1019930004812A KR 930004812 A KR930004812 A KR 930004812A KR 100312368 B1 KR100312368 B1 KR 100312368B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor layer
- layer
- substrate
- semiconductor
- heterojunction
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 145
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 title description 5
- 238000002955 isolation Methods 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000005669 field effect Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 61
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 59
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 13
- 230000010355 oscillation Effects 0.000 abstract description 24
- 230000000694 effects Effects 0.000 abstract description 21
- 238000005530 etching Methods 0.000 abstract description 14
- 230000001172 regenerating effect Effects 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 134
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 230000003405 preventing effect Effects 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
- Junction Field-Effect Transistors (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04073682A JP3092298B2 (ja) | 1992-03-30 | 1992-03-30 | 化合物半導体集積回路および光再生中継器 |
| JP92-073682 | 1992-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930020752A KR930020752A (ko) | 1993-10-20 |
| KR100312368B1 true KR100312368B1 (ko) | 2002-11-08 |
Family
ID=13525233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930004812A KR100312368B1 (ko) | 1992-03-30 | 1993-03-26 | 화합물반도체집적회로및이것을사용하는광재생중계기 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3092298B2 (ja) |
| KR (1) | KR100312368B1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07263644A (ja) * | 1994-03-17 | 1995-10-13 | Hitachi Ltd | 化合物半導体集積回路 |
| JP3005938B2 (ja) | 1998-01-08 | 2000-02-07 | 松下電子工業株式会社 | 半導体装置及びその製造方法 |
| JP4963120B2 (ja) | 2006-02-14 | 2012-06-27 | 独立行政法人産業技術総合研究所 | 光電界効果トランジスタ，及びそれを用いた集積型フォトディテクタ |
| JP5264089B2 (ja) * | 2006-12-07 | 2013-08-14 | 三星ディスプレイ株式會社 | 半導体要素、これを備えた有機発光ディスプレイ装置及び該半導体要素の製造方法 |
| CN107680977B (zh) * | 2017-08-29 | 2020-06-09 | 上海集成电路研发中心有限公司 | 一种减小暗电流的背照式像素单元结构及其形成方法 |
| CN107706201B (zh) * | 2017-08-29 | 2020-06-30 | 上海微阱电子科技有限公司 | 一种减小暗电流的背照式像素单元结构及其形成方法 |
| CN107919372A (zh) * | 2017-10-26 | 2018-04-17 | 上海集成电路研发中心有限公司 | 一种背照式cmos图像传感器像素单元及其制作方法 |
-
1992
- 1992-03-30 JP JP04073682A patent/JP3092298B2/ja not_active Expired - Fee Related
-
1993
- 1993-03-26 KR KR1019930004812A patent/KR100312368B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP3092298B2 (ja) | 2000-09-25 |
| KR930020752A (ko) | 1993-10-20 |
| JPH05275474A (ja) | 1993-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| AMND | Amendment | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| J201 | Request for trial against refusal decision | ||
| AMND | Amendment | ||
| B701 | Decision to grant | ||
| GRNT | Written decision to grant | ||
| LAPS | Lapse due to unpaid annual fee |