KR100308467B1 - 기판내의서브마이크론비아충전방법 - Google Patents

기판내의서브마이크론비아충전방법 Download PDF

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Publication number
KR100308467B1
KR100308467B1 KR1019950704442A KR19950704442A KR100308467B1 KR 100308467 B1 KR100308467 B1 KR 100308467B1 KR 1019950704442 A KR1019950704442 A KR 1019950704442A KR 19950704442 A KR19950704442 A KR 19950704442A KR 100308467 B1 KR100308467 B1 KR 100308467B1
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KR
South Korea
Prior art keywords
temperature
vias
substrate
conductor
aluminum
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KR1019950704442A
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English (en)
Korean (ko)
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KR960702014A (ko
Inventor
루디헨델
히맨레빈스테인
Original Assignee
히가시 데츠로
도쿄 엘렉트론 가부시키가이샤
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Classifications

    • H10W20/059—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H10P95/04—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019950704442A 1993-04-13 1994-03-25 기판내의서브마이크론비아충전방법 Expired - Lifetime KR100308467B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/047,265 US5360524A (en) 1993-04-13 1993-04-13 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
US047265 1993-04-13
US047,265 1993-04-13
PCT/US1994/003286 WO1994024330A1 (en) 1993-04-13 1994-03-25 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits

Publications (2)

Publication Number Publication Date
KR960702014A KR960702014A (ko) 1996-03-28
KR100308467B1 true KR100308467B1 (ko) 2001-11-30

Family

ID=21947981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950704442A Expired - Lifetime KR100308467B1 (ko) 1993-04-13 1994-03-25 기판내의서브마이크론비아충전방법

Country Status (9)

Country Link
US (1) US5360524A (enExample)
EP (1) EP0694086B1 (enExample)
JP (1) JP3400454B2 (enExample)
KR (1) KR100308467B1 (enExample)
AU (1) AU6525294A (enExample)
CA (1) CA2159648A1 (enExample)
DE (1) DE69428113T2 (enExample)
TW (1) TW272305B (enExample)
WO (1) WO1994024330A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device with a multilayer connection structure.
JP3382031B2 (ja) * 1993-11-16 2003-03-04 株式会社東芝 半導体装置の製造方法
US5668055A (en) * 1995-05-05 1997-09-16 Applied Materials, Inc. Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer
JPH0936230A (ja) * 1995-05-15 1997-02-07 Sony Corp 半導体装置の製造方法
JPH09115866A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体装置の製造方法
US5851920A (en) * 1996-01-22 1998-12-22 Motorola, Inc. Method of fabrication of metallization system
US5789317A (en) 1996-04-12 1998-08-04 Micron Technology, Inc. Low temperature reflow method for filling high aspect ratio contacts
US5891803A (en) * 1996-06-26 1999-04-06 Intel Corporation Rapid reflow of conductive layers by directional sputtering for interconnections in integrated circuits
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
TW460597B (en) 1997-03-27 2001-10-21 Applied Materials Inc A barrier layer structure for use in semiconductors and a method of producing an aluminum-comprising layer having a 111 crystal orientation
US5882399A (en) * 1997-08-23 1999-03-16 Applied Materials, Inc. Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
FR2769923B1 (fr) * 1997-10-17 2001-12-28 Cypress Semiconductor Corp Procede ameliore de metallisation a chaud
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US7405149B1 (en) 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US7381642B2 (en) 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816126A (en) * 1985-05-13 1989-03-28 Nippon Telegraph And Telephone Corporation Method for forming a planarized thin film

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4657628A (en) * 1985-05-01 1987-04-14 Texas Instruments Incorporated Process for patterning local interconnects
JPS63162854A (ja) * 1986-12-25 1988-07-06 Fujitsu Ltd 金属膜形成方法
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
US4994162A (en) * 1989-09-29 1991-02-19 Materials Research Corporation Planarization method
US5108570A (en) * 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
KR920010620A (ko) * 1990-11-30 1992-06-26 원본미기재 다층 상호접속선을 위한 알루미늄 적층 접점/통로 형성방법
JPH07109030B2 (ja) * 1991-02-12 1995-11-22 アプライド マテリアルズ インコーポレイテッド 半導体ウェーハ上にアルミニウム層をスパッタする方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816126A (en) * 1985-05-13 1989-03-28 Nippon Telegraph And Telephone Corporation Method for forming a planarized thin film

Also Published As

Publication number Publication date
DE69428113T2 (de) 2002-01-24
EP0694086B1 (en) 2001-08-29
KR960702014A (ko) 1996-03-28
JP3400454B2 (ja) 2003-04-28
DE69428113D1 (de) 2001-10-04
CA2159648A1 (en) 1994-10-27
EP0694086A1 (en) 1996-01-31
WO1994024330A1 (en) 1994-10-27
TW272305B (enExample) 1996-03-11
EP0694086A4 (en) 1998-03-04
AU6525294A (en) 1994-11-08
US5360524A (en) 1994-11-01
JPH08509101A (ja) 1996-09-24

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