CA2159648A1 - Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits - Google Patents

Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits

Info

Publication number
CA2159648A1
CA2159648A1 CA002159648A CA2159648A CA2159648A1 CA 2159648 A1 CA2159648 A1 CA 2159648A1 CA 002159648 A CA002159648 A CA 002159648A CA 2159648 A CA2159648 A CA 2159648A CA 2159648 A1 CA2159648 A1 CA 2159648A1
Authority
CA
Canada
Prior art keywords
temperature
substrate
conductor
vias
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002159648A
Other languages
English (en)
French (fr)
Inventor
Rudi Hendel
Hyman Levinstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2159648A1 publication Critical patent/CA2159648A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10W20/059—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H10P95/04—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CA002159648A 1993-04-13 1994-03-25 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits Abandoned CA2159648A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/047,265 US5360524A (en) 1993-04-13 1993-04-13 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
US047,265 1993-04-13

Publications (1)

Publication Number Publication Date
CA2159648A1 true CA2159648A1 (en) 1994-10-27

Family

ID=21947981

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002159648A Abandoned CA2159648A1 (en) 1993-04-13 1994-03-25 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits

Country Status (9)

Country Link
US (1) US5360524A (enExample)
EP (1) EP0694086B1 (enExample)
JP (1) JP3400454B2 (enExample)
KR (1) KR100308467B1 (enExample)
AU (1) AU6525294A (enExample)
CA (1) CA2159648A1 (enExample)
DE (1) DE69428113T2 (enExample)
TW (1) TW272305B (enExample)
WO (1) WO1994024330A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device with a multilayer connection structure.
JP3382031B2 (ja) * 1993-11-16 2003-03-04 株式会社東芝 半導体装置の製造方法
US5668055A (en) * 1995-05-05 1997-09-16 Applied Materials, Inc. Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer
JPH0936230A (ja) * 1995-05-15 1997-02-07 Sony Corp 半導体装置の製造方法
JPH09115866A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体装置の製造方法
US5851920A (en) * 1996-01-22 1998-12-22 Motorola, Inc. Method of fabrication of metallization system
US5789317A (en) 1996-04-12 1998-08-04 Micron Technology, Inc. Low temperature reflow method for filling high aspect ratio contacts
US5891803A (en) * 1996-06-26 1999-04-06 Intel Corporation Rapid reflow of conductive layers by directional sputtering for interconnections in integrated circuits
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
TW460597B (en) 1997-03-27 2001-10-21 Applied Materials Inc A barrier layer structure for use in semiconductors and a method of producing an aluminum-comprising layer having a 111 crystal orientation
US5882399A (en) * 1997-08-23 1999-03-16 Applied Materials, Inc. Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
FR2769923B1 (fr) * 1997-10-17 2001-12-28 Cypress Semiconductor Corp Procede ameliore de metallisation a chaud
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US7405149B1 (en) 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US7381642B2 (en) 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4657628A (en) * 1985-05-01 1987-04-14 Texas Instruments Incorporated Process for patterning local interconnects
CA1247464A (en) * 1985-05-13 1988-12-28 Hiroaki Nakamura Method for forming a planarized thin film
JPS63162854A (ja) * 1986-12-25 1988-07-06 Fujitsu Ltd 金属膜形成方法
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
US4994162A (en) * 1989-09-29 1991-02-19 Materials Research Corporation Planarization method
US5108570A (en) * 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
KR920010620A (ko) * 1990-11-30 1992-06-26 원본미기재 다층 상호접속선을 위한 알루미늄 적층 접점/통로 형성방법
JPH07109030B2 (ja) * 1991-02-12 1995-11-22 アプライド マテリアルズ インコーポレイテッド 半導体ウェーハ上にアルミニウム層をスパッタする方法

Also Published As

Publication number Publication date
DE69428113T2 (de) 2002-01-24
KR100308467B1 (ko) 2001-11-30
EP0694086B1 (en) 2001-08-29
KR960702014A (ko) 1996-03-28
JP3400454B2 (ja) 2003-04-28
DE69428113D1 (de) 2001-10-04
EP0694086A1 (en) 1996-01-31
WO1994024330A1 (en) 1994-10-27
TW272305B (enExample) 1996-03-11
EP0694086A4 (en) 1998-03-04
AU6525294A (en) 1994-11-08
US5360524A (en) 1994-11-01
JPH08509101A (ja) 1996-09-24

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Legal Events

Date Code Title Description
FZDE Discontinued