TW272305B - - Google Patents

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Publication number
TW272305B
TW272305B TW083102461A TW83102461A TW272305B TW 272305 B TW272305 B TW 272305B TW 083102461 A TW083102461 A TW 083102461A TW 83102461 A TW83102461 A TW 83102461A TW 272305 B TW272305 B TW 272305B
Authority
TW
Taiwan
Application number
TW083102461A
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Application granted granted Critical
Publication of TW272305B publication Critical patent/TW272305B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW083102461A 1993-04-13 1994-03-21 TW272305B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/047,265 US5360524A (en) 1993-04-13 1993-04-13 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits

Publications (1)

Publication Number Publication Date
TW272305B true TW272305B (zh) 1996-03-11

Family

ID=21947981

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083102461A TW272305B (zh) 1993-04-13 1994-03-21

Country Status (9)

Country Link
US (1) US5360524A (zh)
EP (1) EP0694086B1 (zh)
JP (1) JP3400454B2 (zh)
KR (1) KR100308467B1 (zh)
AU (1) AU6525294A (zh)
CA (1) CA2159648A1 (zh)
DE (1) DE69428113T2 (zh)
TW (1) TW272305B (zh)
WO (1) WO1994024330A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device having a multi-layer interconnection structure.
JP3382031B2 (ja) * 1993-11-16 2003-03-04 株式会社東芝 半導体装置の製造方法
US5668055A (en) * 1995-05-05 1997-09-16 Applied Materials, Inc. Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer
JPH0936230A (ja) * 1995-05-15 1997-02-07 Sony Corp 半導体装置の製造方法
JPH09115866A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体装置の製造方法
US5851920A (en) * 1996-01-22 1998-12-22 Motorola, Inc. Method of fabrication of metallization system
US5789317A (en) 1996-04-12 1998-08-04 Micron Technology, Inc. Low temperature reflow method for filling high aspect ratio contacts
US5891803A (en) * 1996-06-26 1999-04-06 Intel Corporation Rapid reflow of conductive layers by directional sputtering for interconnections in integrated circuits
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
TW460597B (en) 1997-03-27 2001-10-21 Applied Materials Inc A barrier layer structure for use in semiconductors and a method of producing an aluminum-comprising layer having a 111 crystal orientation
US5882399A (en) * 1997-08-23 1999-03-16 Applied Materials, Inc. Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
FR2769923B1 (fr) * 1997-10-17 2001-12-28 Cypress Semiconductor Corp Procede ameliore de metallisation a chaud
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US7405149B1 (en) * 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US7381642B2 (en) 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
US4657628A (en) * 1985-05-01 1987-04-14 Texas Instruments Incorporated Process for patterning local interconnects
EP0544648B1 (en) * 1985-05-13 1997-04-09 Nippon Telegraph And Telephone Corporation Method for forming a planarized Al thin film
JPS63162854A (ja) * 1986-12-25 1988-07-06 Fujitsu Ltd 金属膜形成方法
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
US4994162A (en) * 1989-09-29 1991-02-19 Materials Research Corporation Planarization method
US5108570A (en) * 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
KR920010620A (ko) * 1990-11-30 1992-06-26 원본미기재 다층 상호접속선을 위한 알루미늄 적층 접점/통로 형성방법
JPH07109030B2 (ja) * 1991-02-12 1995-11-22 アプライド マテリアルズ インコーポレイテッド 半導体ウェーハ上にアルミニウム層をスパッタする方法

Also Published As

Publication number Publication date
DE69428113T2 (de) 2002-01-24
WO1994024330A1 (en) 1994-10-27
DE69428113D1 (de) 2001-10-04
KR100308467B1 (ko) 2001-11-30
US5360524A (en) 1994-11-01
KR960702014A (ko) 1996-03-28
EP0694086A1 (en) 1996-01-31
EP0694086B1 (en) 2001-08-29
JPH08509101A (ja) 1996-09-24
JP3400454B2 (ja) 2003-04-28
CA2159648A1 (en) 1994-10-27
AU6525294A (en) 1994-11-08
EP0694086A4 (en) 1998-03-04

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