KR100305415B1 - 에칭재료와에칭방법및전자장치제조방법 - Google Patents

에칭재료와에칭방법및전자장치제조방법 Download PDF

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Publication number
KR100305415B1
KR100305415B1 KR1019960014144A KR19960014144A KR100305415B1 KR 100305415 B1 KR100305415 B1 KR 100305415B1 KR 1019960014144 A KR1019960014144 A KR 1019960014144A KR 19960014144 A KR19960014144 A KR 19960014144A KR 100305415 B1 KR100305415 B1 KR 100305415B1
Authority
KR
South Korea
Prior art keywords
etching
film
aluminum
ammonium fluoride
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019960014144A
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English (en)
Korean (ko)
Inventor
도시미쯔 고누마
아키라 수가와라
다케시 니시
유키코 우에하라
사토시 무라카미
미사코 나카자와
Original Assignee
야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12591095A external-priority patent/JPH08295881A/ja
Priority claimed from JP12892395A external-priority patent/JPH08302343A/ja
Application filed by 야마자끼 순페이, 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 야마자끼 순페이
Application granted granted Critical
Publication of KR100305415B1 publication Critical patent/KR100305415B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
KR1019960014144A 1995-04-26 1996-04-26 에칭재료와에칭방법및전자장치제조방법 Expired - Lifetime KR100305415B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12591095A JPH08295881A (ja) 1995-04-26 1995-04-26 エッチング材料およびエッチング方法
JP95-125910 1995-04-26
JP95-128923 1995-04-28
JP12892395A JPH08302343A (ja) 1995-04-28 1995-04-28 エッチング材料およびエッチング方法

Publications (1)

Publication Number Publication Date
KR100305415B1 true KR100305415B1 (ko) 2001-11-22

Family

ID=26462210

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014144A Expired - Lifetime KR100305415B1 (ko) 1995-04-26 1996-04-26 에칭재료와에칭방법및전자장치제조방법

Country Status (3)

Country Link
US (1) US5976988A (https=)
KR (1) KR100305415B1 (https=)
TW (1) TW294831B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same
JP3491571B2 (ja) * 1999-07-13 2004-01-26 日本電気株式会社 半導体薄膜の形成方法
US6506678B1 (en) * 2000-05-19 2003-01-14 Lsi Logic Corporation Integrated circuit structures having low k porous aluminum oxide dielectric material separating aluminum lines, and method of making same
JP4590700B2 (ja) * 2000-07-14 2010-12-01 ソニー株式会社 基板洗浄方法及び基板洗浄装置
US6799589B2 (en) * 2000-11-08 2004-10-05 Sony Corporation Method and apparatus for wet-cleaning substrate
US6638365B2 (en) 2001-10-09 2003-10-28 Chartered Semiconductor Manufacturing Ltd. Method for obtaining clean silicon surfaces for semiconductor manufacturing
KR100415617B1 (ko) * 2001-12-06 2004-01-24 엘지.필립스 엘시디 주식회사 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법
JP2003253482A (ja) * 2002-03-01 2003-09-10 Ngk Insulators Ltd チタン系膜及びチタン酸化物の除去方法
US6972265B1 (en) * 2002-04-15 2005-12-06 Silicon Magnetic Systems Metal etch process selective to metallic insulating materials
US8003513B2 (en) * 2002-09-27 2011-08-23 Medtronic Minimed, Inc. Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures
US20040061232A1 (en) * 2002-09-27 2004-04-01 Medtronic Minimed, Inc. Multilayer substrate
JP4093147B2 (ja) * 2003-09-04 2008-06-04 三菱電機株式会社 エッチング液及びエッチング方法
US7030034B2 (en) * 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
GB0418633D0 (en) * 2004-08-20 2004-09-22 3M Innovative Properties Co Method of making abrasive article
AU2006283664B2 (en) * 2005-08-19 2012-04-12 Houghton Technical Corp. Methods and compositions for acid treatment of a metal surface
JP2009010107A (ja) * 2007-06-27 2009-01-15 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US20100320457A1 (en) * 2007-11-22 2010-12-23 Masahito Matsubara Etching solution composition
KR101030057B1 (ko) 2008-07-16 2011-04-22 (주) 이피웍스 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물
TWI654764B (zh) 2010-11-11 2019-03-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置及其製造方法
SG187274A1 (en) 2011-07-14 2013-02-28 3M Innovative Properties Co Etching method and devices produced using the etching method
US9252053B2 (en) * 2014-01-16 2016-02-02 International Business Machines Corporation Self-aligned contact structure
US20160079592A1 (en) * 2014-09-17 2016-03-17 Massachusetts Institute Of Technology Aluminum based electroactive materials
US11961735B2 (en) 2021-06-04 2024-04-16 Tokyo Electron Limited Cyclic plasma processing
KR102603439B1 (ko) * 2022-03-07 2023-11-20 제엠제코(주) 음각기판을 구비한 반도체 패키지 및 이의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353084A (ja) * 1989-07-18 1991-03-07 Citizen Watch Co Ltd タンタル用エッチング液

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1348811A (en) * 1970-11-27 1974-03-27 Siemens Ag Production of schottky contacts
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
JPS5816534A (ja) * 1981-07-23 1983-01-31 Nec Corp 半導体装置の製造方法
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions
US4761244A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353084A (ja) * 1989-07-18 1991-03-07 Citizen Watch Co Ltd タンタル用エッチング液

Also Published As

Publication number Publication date
US5976988A (en) 1999-11-02
TW294831B (https=) 1997-01-01

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