KR100289742B1 - 반절연폴리실리콘막을이용한전력반도체장치 - Google Patents
반절연폴리실리콘막을이용한전력반도체장치 Download PDFInfo
- Publication number
- KR100289742B1 KR100289742B1 KR1019970046396A KR19970046396A KR100289742B1 KR 100289742 B1 KR100289742 B1 KR 100289742B1 KR 1019970046396 A KR1019970046396 A KR 1019970046396A KR 19970046396 A KR19970046396 A KR 19970046396A KR 100289742 B1 KR100289742 B1 KR 100289742B1
- Authority
- KR
- South Korea
- Prior art keywords
- region
- film
- base
- channel stop
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 title description 2
- 239000010703 silicon Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 229920005591 polysilicon Polymers 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 29
- 230000001681 protective effect Effects 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970046396A KR100289742B1 (ko) | 1997-09-09 | 1997-09-09 | 반절연폴리실리콘막을이용한전력반도체장치 |
| DE19836283A DE19836283A1 (de) | 1997-09-09 | 1998-08-11 | Leistungshalbleiterbauelement mit einem halbisolierenden polykristallinen Silizium (SIPOS)-Film |
| JP10255292A JPH11145151A (ja) | 1997-09-09 | 1998-09-09 | 半絶縁ポリシリコン膜を用いた電力半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970046396A KR100289742B1 (ko) | 1997-09-09 | 1997-09-09 | 반절연폴리실리콘막을이용한전력반도체장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990024987A KR19990024987A (ko) | 1999-04-06 |
| KR100289742B1 true KR100289742B1 (ko) | 2001-05-15 |
Family
ID=19521069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970046396A KR100289742B1 (ko) | 1997-09-09 | 1997-09-09 | 반절연폴리실리콘막을이용한전력반도체장치 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH11145151A (ja) |
| KR (1) | KR100289742B1 (ja) |
| DE (1) | DE19836283A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100343151B1 (ko) * | 1999-10-28 | 2002-07-05 | 김덕중 | Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법 |
| JP6183075B2 (ja) * | 2013-09-03 | 2017-08-23 | 株式会社デンソー | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697439A (ja) * | 1992-09-10 | 1994-04-08 | Toshiba Corp | 高耐圧半導体素子 |
-
1997
- 1997-09-09 KR KR1019970046396A patent/KR100289742B1/ko not_active IP Right Cessation
-
1998
- 1998-08-11 DE DE19836283A patent/DE19836283A1/de not_active Withdrawn
- 1998-09-09 JP JP10255292A patent/JPH11145151A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697439A (ja) * | 1992-09-10 | 1994-04-08 | Toshiba Corp | 高耐圧半導体素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19836283A1 (de) | 1999-03-11 |
| KR19990024987A (ko) | 1999-04-06 |
| JPH11145151A (ja) | 1999-05-28 |
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| A201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
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| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
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