KR100286427B1 - 감광성수지조성물및전자부품용보호막 - Google Patents

감광성수지조성물및전자부품용보호막 Download PDF

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Publication number
KR100286427B1
KR100286427B1 KR1019940002703A KR19940002703A KR100286427B1 KR 100286427 B1 KR100286427 B1 KR 100286427B1 KR 1019940002703 A KR1019940002703 A KR 1019940002703A KR 19940002703 A KR19940002703 A KR 19940002703A KR 100286427 B1 KR100286427 B1 KR 100286427B1
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KR
South Korea
Prior art keywords
resin composition
film
photosensitive resin
group
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940002703A
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English (en)
Korean (ko)
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KR940020174A (ko
Inventor
오끼노시마히로시게
가또히데또
Original Assignee
카나가와 치히로
신에쓰 가가꾸 고교 가부시끼가이샤
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Publication of KR940020174A publication Critical patent/KR940020174A/ko
Application granted granted Critical
Publication of KR100286427B1 publication Critical patent/KR100286427B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
KR1019940002703A 1993-02-17 1994-02-16 감광성수지조성물및전자부품용보호막 Expired - Fee Related KR100286427B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5051418A JP2787531B2 (ja) 1993-02-17 1993-02-17 感光性樹脂組成物及び電子部品用保護膜
JP93-51418 1993-02-17

Publications (2)

Publication Number Publication Date
KR940020174A KR940020174A (ko) 1994-09-15
KR100286427B1 true KR100286427B1 (ko) 2001-09-17

Family

ID=12886386

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940002703A Expired - Fee Related KR100286427B1 (ko) 1993-02-17 1994-02-16 감광성수지조성물및전자부품용보호막

Country Status (4)

Country Link
US (1) US5441845A (enExample)
JP (1) JP2787531B2 (enExample)
KR (1) KR100286427B1 (enExample)
TW (1) TW270979B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573886A (en) * 1994-01-21 1996-11-12 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition comprising a polyimide precursor and method for making a polyimide film pattern from the same
JPH09319082A (ja) * 1996-05-27 1997-12-12 Hitachi Ltd ポジ型感光性樹脂組成物及びそれを用いた電子装置
JP3037633B2 (ja) * 1997-04-18 2000-04-24 オクシデンタル ケミカル コーポレイション ポリイミドのパターン作製
CN1279395C (zh) * 1998-08-26 2006-10-11 日产化学工业株式会社 液晶取向处理剂和用该处理剂的液晶元件以及液晶的取向方法
JP4604141B2 (ja) * 2000-02-16 2010-12-22 株式会社ピーアイ技術研究所 感光性ポリイミドを用いたポリイミドパターンの形成方法及びそのための組成物
EP1491952B1 (en) * 2003-06-23 2015-10-07 Sumitomo Bakelite Co., Ltd. Positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
TW200512543A (en) * 2003-08-06 2005-04-01 Sumitomo Bakelite Co Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
EP1708026B1 (en) 2004-01-14 2011-10-05 Hitachi Chemical DuPont Microsystems Ltd. Photosensitive polymer composition, process for producing pattern, and electronic part
CN101373296B (zh) 2007-08-24 2012-07-04 株式会社日立显示器 液晶显示装置及其制造方法
CN101477309B (zh) * 2009-01-21 2014-05-07 北京波米科技有限公司 正性光敏性聚酰胺酸酯树脂组合物及其制备方法与应用
TWI534178B (zh) * 2011-03-31 2016-05-21 Nissan Chemical Ind Ltd Liquid crystal aligning agent and liquid crystal alignment film using the same
JP7469744B2 (ja) * 2019-01-31 2024-04-17 日産化学株式会社 液晶配向剤及びそれを用いた液晶配向膜及び液晶表示素子
JP7431696B2 (ja) * 2020-08-04 2024-02-15 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7638174B2 (ja) * 2020-08-04 2025-03-03 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623870A (en) * 1969-07-22 1971-11-30 Bell Telephone Labor Inc Technique for the preparation of thermally stable photoresist
NL177718C (nl) * 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
JPS5545746A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Reactive polymer composition
US4515887A (en) * 1983-08-29 1985-05-07 General Electric Company Photopatternable dielectric compositions, method for making and use
US4587204A (en) * 1983-08-29 1986-05-06 General Electric Company Photopatternable dielectric compositions, method for making and use
JPS62275129A (ja) * 1986-05-23 1987-11-30 Mitsubishi Chem Ind Ltd 耐熱感光性材料
JPS6431150A (en) * 1987-07-27 1989-02-01 Toa Nenryo Kogyo Kk Heat resistant photosensitive material
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
US5288588A (en) * 1989-10-27 1994-02-22 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition comprising an o-quinone diazide as a photosensitive compound
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
JPH03259260A (ja) * 1990-03-09 1991-11-19 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JP3011457B2 (ja) * 1990-11-30 2000-02-21 株式会社東芝 感光性樹脂組成物
JPH04313756A (ja) * 1991-04-11 1992-11-05 Shin Etsu Chem Co Ltd 感光材及びその製造方法
US5302489A (en) * 1991-10-29 1994-04-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions containing base polymer which is substantially insoluble at pH between 7 and 10, quinonediazide acid generator and silanol solubility enhancer
JP2674415B2 (ja) * 1992-01-27 1997-11-12 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
JPH06208226A (ja) * 1993-01-11 1994-07-26 Hitachi Chem Co Ltd 耐熱性感光性重合体組成物及びレリーフパターンの製造法

Also Published As

Publication number Publication date
US5441845A (en) 1995-08-15
JPH07319162A (ja) 1995-12-08
KR940020174A (ko) 1994-09-15
JP2787531B2 (ja) 1998-08-20
TW270979B (enExample) 1996-02-21

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