KR100285219B1 - 비휘발성 메모리 셀의 스트레스 감소 방법 - Google Patents

비휘발성 메모리 셀의 스트레스 감소 방법 Download PDF

Info

Publication number
KR100285219B1
KR100285219B1 KR1019950000816A KR19950000816A KR100285219B1 KR 100285219 B1 KR100285219 B1 KR 100285219B1 KR 1019950000816 A KR1019950000816 A KR 1019950000816A KR 19950000816 A KR19950000816 A KR 19950000816A KR 100285219 B1 KR100285219 B1 KR 100285219B1
Authority
KR
South Korea
Prior art keywords
memory cell
transistor
word line
line
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950000816A
Other languages
English (en)
Korean (ko)
Other versions
KR950034268A (ko
Inventor
스마랜듀 조오지
제이. 슈만 스티븐
충칭 우
Original Assignee
페레고스 조지
아트멜 코포레이숀
마이크 로스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 페레고스 조지, 아트멜 코포레이숀, 마이크 로스 filed Critical 페레고스 조지
Publication of KR950034268A publication Critical patent/KR950034268A/ko
Application granted granted Critical
Publication of KR100285219B1 publication Critical patent/KR100285219B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
KR1019950000816A 1994-01-19 1995-01-19 비휘발성 메모리 셀의 스트레스 감소 방법 Expired - Fee Related KR100285219B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/184,227 1994-01-19
US08/184,227 US5434815A (en) 1994-01-19 1994-01-19 Stress reduction for non-volatile memory cell
US8/184227 1994-01-19

Publications (2)

Publication Number Publication Date
KR950034268A KR950034268A (ko) 1995-12-28
KR100285219B1 true KR100285219B1 (ko) 2001-04-02

Family

ID=22676058

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950000816A Expired - Fee Related KR100285219B1 (ko) 1994-01-19 1995-01-19 비휘발성 메모리 셀의 스트레스 감소 방법

Country Status (7)

Country Link
US (1) US5434815A (enExample)
EP (1) EP0664544B1 (enExample)
JP (2) JPH07254295A (enExample)
KR (1) KR100285219B1 (enExample)
CN (1) CN1039172C (enExample)
DE (1) DE69517060T2 (enExample)
TW (1) TW281763B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5617350A (en) * 1995-08-01 1997-04-01 Roohparvar; Frankie F. Flash memory system having reduced disturb and method
US5657268A (en) * 1995-11-20 1997-08-12 Texas Instruments Incorporated Array-source line, bitline and wordline sequence in flash operations
US5959891A (en) * 1996-08-16 1999-09-28 Altera Corporation Evaluation of memory cell characteristics
US5852306A (en) 1997-01-29 1998-12-22 Micron Technology, Inc. Flash memory with nanocrystalline silicon film floating gate
US5754477A (en) * 1997-01-29 1998-05-19 Micron Technology, Inc. Differential flash memory cell and method for programming
US5740104A (en) * 1997-01-29 1998-04-14 Micron Technology, Inc. Multi-state flash memory cell and method for programming single electron differences
US5801401A (en) * 1997-01-29 1998-09-01 Micron Technology, Inc. Flash memory with microcrystalline silicon carbide film floating gate
US6232643B1 (en) 1997-11-13 2001-05-15 Micron Technology, Inc. Memory using insulator traps
US6493270B2 (en) 1999-07-01 2002-12-10 Micron Technology, Inc. Leakage detection in programming algorithm for a flash memory device
US6108241A (en) * 1999-07-01 2000-08-22 Micron Technology, Inc. Leakage detection in flash memory cell
US7193893B2 (en) 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US6804136B2 (en) * 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US7154140B2 (en) 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6996009B2 (en) * 2002-06-21 2006-02-07 Micron Technology, Inc. NOR flash memory cell with high storage density
US6888739B2 (en) * 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7847344B2 (en) * 2002-07-08 2010-12-07 Micron Technology, Inc. Memory utilizing oxide-nitride nanolaminates
JP4314056B2 (ja) * 2003-04-17 2009-08-12 パナソニック株式会社 半導体記憶装置
US7054216B2 (en) * 2004-03-17 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Programmable MOS device formed by hot carrier effect
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP2007193928A (ja) * 2005-12-19 2007-08-02 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
JP4504397B2 (ja) 2007-05-29 2010-07-14 株式会社東芝 半導体記憶装置
CN103943136B (zh) * 2013-01-17 2017-09-08 旺宏电子股份有限公司 一种存储器电路及其操作方法
JP6166810B1 (ja) * 2016-03-08 2017-07-19 力晶科技股▲ふん▼有限公司 半導体記憶装置
FR3136583A1 (fr) 2022-06-08 2023-12-15 Stmicroelectronics (Rousset) Sas Dispositif de verrou, en particulier pour le décodage rangée et le décodage colonne d’un plan mémoire EEPROM
FR3139658B1 (fr) * 2022-09-08 2025-05-23 St Microelectronics Rousset Dispositif de du type mémoire EEPROM à architecture du type à « tension partagée ».

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179626A (en) * 1978-06-29 1979-12-18 Westinghouse Electric Corp. Sense circuit for use in variable threshold transistor memory arrays
JPS62266798A (ja) * 1986-05-13 1987-11-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5033023A (en) * 1988-04-08 1991-07-16 Catalyst Semiconductor, Inc. High density EEPROM cell and process for making the cell
JP2685966B2 (ja) * 1990-06-22 1997-12-08 株式会社東芝 不揮発性半導体記憶装置
KR920006988A (ko) * 1990-09-25 1992-04-28 아오이 죠이치 불휘발성 반도체메모리
JPH0721790A (ja) * 1993-07-05 1995-01-24 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
DE69517060D1 (de) 2000-06-29
EP0664544A2 (en) 1995-07-26
EP0664544A3 (en) 1996-10-02
JPH07254295A (ja) 1995-10-03
TW281763B (enExample) 1996-07-21
DE69517060T2 (de) 2001-02-15
EP0664544B1 (en) 2000-05-24
CN1039172C (zh) 1998-07-15
KR950034268A (ko) 1995-12-28
US5434815A (en) 1995-07-18
JP2005228475A (ja) 2005-08-25
CN1117644A (zh) 1996-02-28

Similar Documents

Publication Publication Date Title
KR100285219B1 (ko) 비휘발성 메모리 셀의 스트레스 감소 방법
US5991201A (en) Non-volatile memory with over-program protection and method therefor
KR0182866B1 (ko) 플래쉬 메모리 장치
KR100338772B1 (ko) 바이어스 라인이 분리된 비휘발성 메모리 장치의 워드라인 드라이버 및 워드 라인 드라이빙 방법
US5463583A (en) Non-volatile semiconductor memory device
JPH11500855A (ja) Ｅｐｒｏｍメモリアレー用切換グラウンドリード
KR940006611B1 (ko) 전기적으로 소거 및 프로그램이 가능한 반도체 메모리장치의 자동 소거 최적화회로 및 방법
US6735120B2 (en) Semiconductor device having a high-speed data read operation
US5400287A (en) Method for erasing and verifying nonvolatile semiconductor memory device
JP2007323808A (ja) 半導体記憶装置用ｘデコーダ
JP3548830B2 (ja) 擾乱が減ぜられたフラッシュ・メモリ・システム及びその方法
US6870771B2 (en) Nonvolatile semiconductor memory device that can suppress effect of threshold voltage variation of memory cell transistor
KR100605275B1 (ko) 반도체 기억 장치
EP0377840A2 (en) Nonvolatile semiconductor memory device having reference potential generating circuit
US6151250A (en) Flash memory device and verify method thereof
US6166957A (en) Nonvolatile semiconductor memory device with a level shifter circuit
US6101126A (en) Nonvolatile semiconductor memory device with a level shifter circuit
JP2000137990A (ja) フラッシュメモリ装置の消去方法及びリカバリ用基板電圧供給回路
US6178118B1 (en) Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages
US5896319A (en) Current control circuit and non-volatile semiconductor memory device having the same
KR100341380B1 (ko) 비휘발성 반도체 메모리
JP3110395B2 (ja) ベリファイ装置
KR100187665B1 (ko) 플래쉬 메모리 장치
EP0460648A2 (en) Programming circuit for use in nonvolatile semiconductor memory device
JPH09180480A (ja) 不揮発性メモリデバイス用スナッププログラミング予調整手順

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20041119

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20060103

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20060103

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000