KR100277184B1 - 액정 표시 장치의 제조방법 - Google Patents
액정 표시 장치의 제조방법 Download PDFInfo
- Publication number
- KR100277184B1 KR100277184B1 KR1019980025768A KR19980025768A KR100277184B1 KR 100277184 B1 KR100277184 B1 KR 100277184B1 KR 1019980025768 A KR1019980025768 A KR 1019980025768A KR 19980025768 A KR19980025768 A KR 19980025768A KR 100277184 B1 KR100277184 B1 KR 100277184B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- film
- gate electrode
- layer
- electrode
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 16
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 238000002048 anodisation reaction Methods 0.000 claims abstract description 7
- 238000002161 passivation Methods 0.000 claims abstract description 6
- 238000007743 anodising Methods 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000011347 resin Substances 0.000 abstract description 12
- 229920005989 resin Polymers 0.000 abstract description 12
- 230000001681 protective effect Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 49
- 239000010407 anodic oxide Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (3)
- 유리 기판상에 게이트 전극용 금속막을 증착하는 단계;상기 금속막 상에 게이트 전극 한정용 포토레지스트 패턴을 형성한다음 노출된 금속막을 양극 산화하여, 게이트 전극 및 게이트 전극 양측에 평탄화용 양극 산화막을 형성하는 단계;상기 게이트 전극 및 양극 산화막 상부에 게이트 절연막을 형성하는 단계;상기 게이트 전극 및 게이트 전극 양측 양극 산화막 상부에 비정질 실리콘층을 형성하고, 게이트 전극 부분을 포함하도록 채널층을 형성하는 단계;상기 채널층 양측에 오믹 콘택층을 형성하는 단계;상기 오믹 콘택층이 형성된 게이트 절연막 상에 소오스, 드레인 전극용 금속막을 증착하는 단계;상기 금속막 상부에 소오스, 드레인 전극용 포토레지스트 패턴을 형성한다음, 노출된 금속막을 양극 산화하여, 소오스, 드레인 전극 및 소오스, 드레인 전극 양측에 평탄화용 양극 산화막을 형성하는 단계;상기 소오스, 드레인 전극 및 그 양측 양극 산화막 상부에 상기 드레인이 노출되도록 콘택홀이 구비된 보호막을 증착하는 단계; 및상기 보호막 상부에 콘택홀에 의하여 노출된 드레인 전극과 콘택되도록 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정 표시 장치의 제조방법.
- 제 1 항에 있어서, 상기 게이트 전극용 금속막과 상기 소오스, 드레인 전극용 금속막은 알루미늄 금속막인 것을 특징으로 하는 액정 표시 장치의 제조방법.
- 제 1 항 또는 제 2 항에 있어서, 상기 채널층을 형성하는 단계는, 상기 게이트 절연막 상부에 비정질 실리콘층을 형성하는 단계; 상기 비정질 실리콘층 상부에 포토레지스트막을 도포한다음, 게이트 전극을 마스크로 하여 후면 노광하여 포토레지스트 패턴을 형성하는 단계; 및 상기 포토레지스트 패턴을 마스크로 하여 비정질 실리콘층을 패터닝하여 채널층을 형성하는 단계를 포함하는 것을 특징으로 하는 액정 표시 장치의 제조방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980025768A KR100277184B1 (ko) | 1998-06-30 | 1998-06-30 | 액정 표시 장치의 제조방법 |
US09/342,610 US6204082B1 (en) | 1998-06-30 | 1999-06-29 | Method of manufacturing liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980025768A KR100277184B1 (ko) | 1998-06-30 | 1998-06-30 | 액정 표시 장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000004336A KR20000004336A (ko) | 2000-01-25 |
KR100277184B1 true KR100277184B1 (ko) | 2001-01-15 |
Family
ID=19542156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980025768A KR100277184B1 (ko) | 1998-06-30 | 1998-06-30 | 액정 표시 장치의 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6204082B1 (ko) |
KR (1) | KR100277184B1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100850585B1 (ko) * | 2002-04-11 | 2008-08-05 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시장치의 제조방법 |
JP4491375B2 (ja) * | 2005-04-26 | 2010-06-30 | 日本電気株式会社 | 液晶表示装置の製造方法 |
CN102253521B (zh) * | 2011-08-08 | 2013-11-06 | 信利半导体有限公司 | 一种液晶显示装置及制造方法 |
CN103456745B (zh) * | 2013-09-10 | 2016-09-07 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0563196A (ja) | 1991-09-04 | 1993-03-12 | Hitachi Ltd | 薄膜半導体装置及びその製造方法並び液晶表示装置 |
US5466618A (en) * | 1993-12-29 | 1995-11-14 | Goldstar Co., Ltd. | Method for fabricating a thin film transistor for a liquid crystal display |
JPH08139328A (ja) | 1994-11-11 | 1996-05-31 | Casio Comput Co Ltd | 半導体装置の製造方法 |
US5923050A (en) * | 1995-02-08 | 1999-07-13 | Samsung Electronics Co., Ltd. | Amorphous silicon TFT |
KR100193348B1 (ko) * | 1996-02-12 | 1999-07-01 | 구자홍 | 액정표시장치의 박막트랜지스터 제조방법 |
JPH09266315A (ja) | 1996-03-29 | 1997-10-07 | Toshiba Corp | 薄膜トランジスタ及び液晶表示装置 |
JPH1011029A (ja) | 1996-06-26 | 1998-01-16 | Nec Yonezawa Ltd | 階調制御用lcdコントローラのフレームメモリ制御方 法及びその装置 |
JPH1020337A (ja) | 1996-07-02 | 1998-01-23 | Hitachi Ltd | 半導体装置の製造方法 |
US6025605A (en) * | 1996-07-26 | 2000-02-15 | Lg Electronics Inc. | Aligned semiconductor structure |
JP3284899B2 (ja) | 1996-10-17 | 2002-05-20 | 松下電器産業株式会社 | 半導体素子及びその製造方法 |
US5913113A (en) * | 1997-02-24 | 1999-06-15 | Lg Electronics Inc. | Method for fabricating a thin film transistor of a liquid crystal display device |
US6011274A (en) * | 1997-10-20 | 2000-01-04 | Ois Optical Imaging Systems, Inc. | X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween |
-
1998
- 1998-06-30 KR KR1019980025768A patent/KR100277184B1/ko not_active IP Right Cessation
-
1999
- 1999-06-29 US US09/342,610 patent/US6204082B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6204082B1 (en) | 2001-03-20 |
KR20000004336A (ko) | 2000-01-25 |
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