KR100274175B1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR100274175B1
KR100274175B1 KR1019980031674A KR19980031674A KR100274175B1 KR 100274175 B1 KR100274175 B1 KR 100274175B1 KR 1019980031674 A KR1019980031674 A KR 1019980031674A KR 19980031674 A KR19980031674 A KR 19980031674A KR 100274175 B1 KR100274175 B1 KR 100274175B1
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KR
South Korea
Prior art keywords
wiring
drain region
film
type source
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980031674A
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English (en)
Korean (ko)
Other versions
KR19990044788A (ko
Inventor
요시유끼 이시가끼
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19990044788A publication Critical patent/KR19990044788A/ko
Application granted granted Critical
Publication of KR100274175B1 publication Critical patent/KR100274175B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019980031674A 1997-11-28 1998-08-04 반도체 장치 및 반도체 장치의 제조 방법 Expired - Fee Related KR100274175B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32812797A JP3807836B2 (ja) 1997-11-28 1997-11-28 半導体装置および半導体装置の製造方法
JP97-328127 1997-11-28

Publications (2)

Publication Number Publication Date
KR19990044788A KR19990044788A (ko) 1999-06-25
KR100274175B1 true KR100274175B1 (ko) 2001-02-01

Family

ID=18206798

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980031674A Expired - Fee Related KR100274175B1 (ko) 1997-11-28 1998-08-04 반도체 장치 및 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (2) US6097103A (enExample)
JP (1) JP3807836B2 (enExample)
KR (1) KR100274175B1 (enExample)
CN (1) CN1171314C (enExample)
DE (1) DE19833949A1 (enExample)
TW (1) TW380302B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811350A (en) 1996-08-22 1998-09-22 Micron Technology, Inc. Method of forming contact openings and an electronic component formed from the same and other methods
US6261948B1 (en) 1998-07-31 2001-07-17 Micron Technology, Inc. Method of forming contact openings
US6380023B2 (en) 1998-09-02 2002-04-30 Micron Technology, Inc. Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits
KR20000012252U (ko) * 1998-12-16 2000-07-05 전주범 압전소자를 사용한 커넥터
US6274409B1 (en) * 2000-01-18 2001-08-14 Agere Systems Guardian Corp. Method for making a semiconductor device
JP2002158359A (ja) * 2000-11-21 2002-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4570811B2 (ja) * 2001-04-27 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置
WO2003023847A2 (en) * 2001-09-13 2003-03-20 Koninklijke Philips Electronics N.V. Integrated circuit, portable device and method for manufacturing an integrated circuit
JP2004047529A (ja) * 2002-07-09 2004-02-12 Renesas Technology Corp 半導体記憶装置
US7078283B1 (en) * 2002-08-07 2006-07-18 Taiwan Semiconductor Manufacturing Company Process for providing ESD protection by using contact etch module
JP2004241473A (ja) * 2003-02-04 2004-08-26 Renesas Technology Corp 半導体記憶装置
US7365432B2 (en) * 2004-08-23 2008-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell structure
KR100555577B1 (ko) * 2004-10-26 2006-03-03 삼성전자주식회사 에스램 셀의 형성 방법
JP4531615B2 (ja) * 2005-02-03 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
CN100438074C (zh) * 2006-06-16 2008-11-26 广州南科集成电子有限公司 平面型单硅双金属层功率器件及制造方法
JP5386819B2 (ja) * 2007-12-14 2014-01-15 富士通セミコンダクター株式会社 半導体記憶装置
TWI373239B (en) * 2008-12-29 2012-09-21 Au Optronics Corp Amplitude shift keying demodulator and radio frequency identification system using the same
CN102130129B (zh) * 2010-01-20 2013-12-18 上海华虹Nec电子有限公司 Sram的版图结构及其制造方法
US9343381B2 (en) * 2013-05-22 2016-05-17 Infineon Technologies Ag Semiconductor component with integrated crack sensor and method for detecting a crack in a semiconductor component
US9666546B1 (en) * 2016-04-28 2017-05-30 Infineon Technologies Ag Multi-layer metal pads

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710897A (en) 1984-04-27 1987-12-01 Kabushiki Kaisha Toshiba Semiconductor memory device comprising six-transistor memory cells
US5340762A (en) 1985-04-01 1994-08-23 Fairchild Semiconductor Corporation Method of making small contactless RAM cell
US5294822A (en) * 1989-07-10 1994-03-15 Texas Instruments Incorporated Polycide local interconnect method and structure
JPH0541378A (ja) 1991-03-15 1993-02-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5204286A (en) 1991-10-15 1993-04-20 Micron Technology, Inc. Method of making self-aligned contacts and vertical interconnects to integrated circuits
JP3780003B2 (ja) 1993-06-15 2006-05-31 株式会社ルネサステクノロジ 半導体集積回路装置
US5460983A (en) * 1993-07-30 1995-10-24 Sgs-Thomson Microelectronics, Inc. Method for forming isolated intra-polycrystalline silicon structures
US5567972A (en) * 1993-11-05 1996-10-22 Oki Electric Industry Co., Ltd. Optical element mounted on a base having a capacitor imbedded therein
JPH07235645A (ja) * 1993-12-29 1995-09-05 Mitsubishi Electric Corp スタティック型半導体記憶装置およびその製造方法
JP2906971B2 (ja) 1993-12-30 1999-06-21 日本電気株式会社 半導体記憶装置の製造方法
US5589415A (en) 1995-06-07 1996-12-31 Sgs-Thomson Microelectronics, Inc. Method for forming a semiconductor structure with self-aligned contacts
US5607879A (en) * 1995-06-28 1997-03-04 Taiwan Semiconductor Manufacturing Company Ltd. Method for forming buried plug contacts on semiconductor integrated circuits
KR0165423B1 (ko) * 1995-07-24 1998-12-15 김광호 반도체 장치의 접속구조 및 그 제조방법
JPH0955440A (ja) * 1995-08-17 1997-02-25 Sony Corp 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
KR19990044788A (ko) 1999-06-25
TW380302B (en) 2000-01-21
CN1223471A (zh) 1999-07-21
DE19833949A1 (de) 1999-06-10
JP3807836B2 (ja) 2006-08-09
JPH11163166A (ja) 1999-06-18
US6097103A (en) 2000-08-01
US6242297B1 (en) 2001-06-05
CN1171314C (zh) 2004-10-13

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