KR100237267B1 - 강유전체 메모리 장치 및 그 동작 제어 방법 - Google Patents

강유전체 메모리 장치 및 그 동작 제어 방법 Download PDF

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Publication number
KR100237267B1
KR100237267B1 KR1019960000022A KR19960000022A KR100237267B1 KR 100237267 B1 KR100237267 B1 KR 100237267B1 KR 1019960000022 A KR1019960000022 A KR 1019960000022A KR 19960000022 A KR19960000022 A KR 19960000022A KR 100237267 B1 KR100237267 B1 KR 100237267B1
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KR
South Korea
Prior art keywords
voltage
signal line
data signal
ferroelectric
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960000022A
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English (en)
Korean (ko)
Other versions
KR960030237A (ko
Inventor
토루 키루마
히로키 코이케
테쯔야 오쯔키
마사히데 다카다
Original Assignee
가네꼬 히사시
닛본 덴기 가부시키가이샤
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Publication date
Application filed by 가네꼬 히사시, 닛본 덴기 가부시키가이샤 filed Critical 가네꼬 히사시
Publication of KR960030237A publication Critical patent/KR960030237A/ko
Application granted granted Critical
Publication of KR100237267B1 publication Critical patent/KR100237267B1/ko
Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 닛본 덴기 가부시끼가이샤
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019960000022A 1995-01-04 1996-01-04 강유전체 메모리 장치 및 그 동작 제어 방법 Expired - Fee Related KR100237267B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-000063 1995-01-04
JP7000063A JP2748873B2 (ja) 1995-01-04 1995-01-04 強誘電体メモリ装置およびその動作制御方法

Publications (2)

Publication Number Publication Date
KR960030237A KR960030237A (ko) 1996-08-17
KR100237267B1 true KR100237267B1 (ko) 2000-01-15

Family

ID=11463743

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960000022A Expired - Fee Related KR100237267B1 (ko) 1995-01-04 1996-01-04 강유전체 메모리 장치 및 그 동작 제어 방법

Country Status (6)

Country Link
US (1) US5610852A (https=)
EP (1) EP0721190B1 (https=)
JP (1) JP2748873B2 (https=)
KR (1) KR100237267B1 (https=)
DE (1) DE69620654T2 (https=)
TW (1) TW305997B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100601928B1 (ko) * 1996-06-10 2006-10-04 삼성전자주식회사 강유전체랜덤액세서메모리의비휘발성유지장치및방법
JP2003078037A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体メモリ装置
US6954397B2 (en) * 2003-07-24 2005-10-11 Texas Instruments Incorporated Circuit for reducing standby leakage in a memory unit
JP4079910B2 (ja) * 2004-05-28 2008-04-23 富士通株式会社 強誘電体メモリ
US7164595B1 (en) * 2005-08-25 2007-01-16 Micron Technology, Inc. Device and method for using dynamic cell plate sensing in a DRAM memory cell
WO2007029320A1 (ja) * 2005-09-07 2007-03-15 Fujitsu Limited 強誘電体メモリ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100294A (ja) * 1981-12-11 1983-06-14 Toshiba Corp 差動形センス回路
JPS6282597A (ja) * 1985-10-08 1987-04-16 Fujitsu Ltd 半導体記憶装置
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
JPH0713877B2 (ja) * 1988-10-19 1995-02-15 株式会社東芝 半導体メモリ
KR930002470B1 (ko) * 1989-03-28 1993-04-02 가부시키가이샤 도시바 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법
US5400275A (en) * 1990-06-08 1995-03-21 Kabushiki Kaisha Toshiba Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected
US5031143A (en) * 1990-11-21 1991-07-09 National Semiconductor Corporation Preamplifier for ferroelectric memory device sense amplifier
US5357460A (en) * 1991-05-28 1994-10-18 Sharp Kabushiki Kaisha Semiconductor memory device having two transistors and at least one ferroelectric film capacitor
US5198706A (en) * 1991-10-15 1993-03-30 National Semiconductor Ferroelectric programming cell for configurable logic
US5309391A (en) * 1992-10-02 1994-05-03 National Semiconductor Corporation Symmetrical polarization enhancement in a ferroelectric memory cell
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
JP3191549B2 (ja) * 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置

Also Published As

Publication number Publication date
TW305997B (https=) 1997-05-21
EP0721190B1 (en) 2002-04-17
JPH08185693A (ja) 1996-07-16
KR960030237A (ko) 1996-08-17
US5610852A (en) 1997-03-11
EP0721190A2 (en) 1996-07-10
DE69620654D1 (de) 2002-05-23
DE69620654T2 (de) 2002-11-28
EP0721190A3 (en) 1999-01-20
JP2748873B2 (ja) 1998-05-13

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