KR100235568B1 - 자기 정렬된 이질 접합 바이폴라 트랜지스터 제조 방법 - Google Patents

자기 정렬된 이질 접합 바이폴라 트랜지스터 제조 방법 Download PDF

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Publication number
KR100235568B1
KR100235568B1 KR1019910014956A KR910014956A KR100235568B1 KR 100235568 B1 KR100235568 B1 KR 100235568B1 KR 1019910014956 A KR1019910014956 A KR 1019910014956A KR 910014956 A KR910014956 A KR 910014956A KR 100235568 B1 KR100235568 B1 KR 100235568B1
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KR
South Korea
Prior art keywords
layer
emitter
forming
base
insulator
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Application number
KR1019910014956A
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English (en)
Korean (ko)
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KR920005325A (ko
Inventor
바이락타로글루 부르한
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
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Application filed by 윌리엄 비. 켐플러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 비. 켐플러
Publication of KR920005325A publication Critical patent/KR920005325A/ko
Application granted granted Critical
Publication of KR100235568B1 publication Critical patent/KR100235568B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
KR1019910014956A 1990-08-31 1991-08-28 자기 정렬된 이질 접합 바이폴라 트랜지스터 제조 방법 KR100235568B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57654090A 1990-08-31 1990-08-31
US576,540 1990-08-31

Publications (2)

Publication Number Publication Date
KR920005325A KR920005325A (ko) 1992-03-28
KR100235568B1 true KR100235568B1 (ko) 1999-12-15

Family

ID=24304857

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014956A KR100235568B1 (ko) 1990-08-31 1991-08-28 자기 정렬된 이질 접합 바이폴라 트랜지스터 제조 방법

Country Status (5)

Country Link
US (1) US5344786A (de)
EP (1) EP0478923B1 (de)
JP (1) JPH04234130A (de)
KR (1) KR100235568B1 (de)
DE (1) DE69128123T2 (de)

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US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
US5700701A (en) * 1992-10-30 1997-12-23 Texas Instruments Incorporated Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors
US5266505A (en) * 1992-12-22 1993-11-30 International Business Machines Corporation Image reversal process for self-aligned implants in planar epitaxial-base bipolar transistors
US5822472A (en) * 1994-05-27 1998-10-13 Novartis Corporation Process for detecting evanescently excited luminescence
US5445976A (en) * 1994-08-09 1995-08-29 Texas Instruments Incorporated Method for producing bipolar transistor having reduced base-collector capacitance
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
US5736417A (en) * 1996-05-13 1998-04-07 Trw Inc. Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor
EP0810646A3 (de) * 1996-05-13 1998-01-14 Trw Inc. Verfahren zur Herstellung eines Heterobipolartransistors mit sehr hohem Verstärkungsfaktor
US5804487A (en) * 1996-07-10 1998-09-08 Trw Inc. Method of fabricating high βHBT devices
JP2001510636A (ja) * 1997-02-03 2001-07-31 ザ ウィタカー コーポレーション ヘテロジャンクションバイポーラトランジスタにおける不動化棚を製造する自己整合方法
TW483171B (en) * 2000-03-16 2002-04-11 Trw Inc Ultra high speed heterojunction bipolar transistor having a cantilevered base.
DE10104776A1 (de) * 2001-02-02 2002-08-22 Infineon Technologies Ag Bipolartransistor und Verfahren zu dessen Herstellung
DE102006007053B4 (de) * 2006-02-15 2008-08-14 Infineon Technologies Austria Ag Optimierte dielektrische Isolationsstrukturen und Verfahren zu deren Herstellung
US8092704B2 (en) * 2008-12-30 2012-01-10 Hitachi Global Storage Technologies Netherlands B.V. System, method and apparatus for fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications
CN104124155A (zh) * 2014-07-02 2014-10-29 中国电子科技集团公司第五十五研究所 一种磷化铟异质结晶体管侧墙保护发射极制作方法
CN104485281A (zh) * 2014-10-27 2015-04-01 中国电子科技集团公司第五十五研究所 磷化铟异质结晶体管发射区材料干湿法结合刻蚀制作方法

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US4272348A (en) * 1978-11-20 1981-06-09 International Business Machines Corporation Bubble device fabrication
JPS5616663A (en) * 1979-07-17 1981-02-17 Teikoku Piston Ring Co Ltd Member having formed cavitation resistant sprayed coat
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
US4672419A (en) * 1984-06-25 1987-06-09 Texas Instruments Incorporated Metal gate, interconnect and contact system for VLSI devices
US4674174A (en) * 1984-10-17 1987-06-23 Kabushiki Kaisha Toshiba Method for forming a conductor pattern using lift-off
JPS61147571A (ja) * 1984-12-21 1986-07-05 Toshiba Corp ヘテロ接合バイポ−ラトランジスタの製造方法
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JPS63114258A (ja) * 1986-10-31 1988-05-19 Sony Corp ヘテロ接合型バイポ−ラトランジスタ
JPS63124465A (ja) * 1986-11-13 1988-05-27 Nec Corp バイポ−ラトランジスタの製造方法
EP0281235B1 (de) * 1987-01-30 1993-07-14 Texas Instruments Incorporated Verfahren zum Herstellen eines bipolaren Transistors unter Verwendung von CMOS-Techniken
JPS63200567A (ja) * 1987-02-17 1988-08-18 Toshiba Corp ヘテロ接合バイポ−ラトランジスタおよびその製造方法
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Also Published As

Publication number Publication date
DE69128123T2 (de) 1998-03-05
EP0478923B1 (de) 1997-11-05
DE69128123D1 (de) 1997-12-11
EP0478923A3 (en) 1993-04-21
EP0478923A2 (de) 1992-04-08
KR920005325A (ko) 1992-03-28
US5344786A (en) 1994-09-06
JPH04234130A (ja) 1992-08-21

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