KR100228254B1 - 산화확산처리장치 - Google Patents

산화확산처리장치 Download PDF

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Publication number
KR100228254B1
KR100228254B1 KR1019930001172A KR930001172A KR100228254B1 KR 100228254 B1 KR100228254 B1 KR 100228254B1 KR 1019930001172 A KR1019930001172 A KR 1019930001172A KR 930001172 A KR930001172 A KR 930001172A KR 100228254 B1 KR100228254 B1 KR 100228254B1
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KR
South Korea
Prior art keywords
processing
gas
container
oxidation diffusion
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930001172A
Other languages
English (en)
Korean (ko)
Other versions
KR930016142A (ko
Inventor
신고 와다나베
신이찌 진다떼
Original Assignee
이노우에 다께시
도꾜 일렉트론 사가미 가부시키가이샤
다니구찌 이찌로오
미쓰비시 덴키 가부시키가이샤
기타오카 다카시
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이노우에 다께시, 도꾜 일렉트론 사가미 가부시키가이샤, 다니구찌 이찌로오, 미쓰비시 덴키 가부시키가이샤, 기타오카 다카시 filed Critical 이노우에 다께시
Publication of KR930016142A publication Critical patent/KR930016142A/ko
Application granted granted Critical
Publication of KR100228254B1 publication Critical patent/KR100228254B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
KR1019930001172A 1992-01-31 1993-01-29 산화확산처리장치 Expired - Fee Related KR100228254B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP92-40747 1992-01-31
JP92-407470 1992-01-31
JP4040747A JPH05217929A (ja) 1992-01-31 1992-01-31 酸化拡散処理装置

Publications (2)

Publication Number Publication Date
KR930016142A KR930016142A (ko) 1993-08-26
KR100228254B1 true KR100228254B1 (ko) 1999-11-01

Family

ID=12589230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930001172A Expired - Fee Related KR100228254B1 (ko) 1992-01-31 1993-01-29 산화확산처리장치

Country Status (4)

Country Link
US (1) US5330352A (https=)
JP (1) JPH05217929A (https=)
KR (1) KR100228254B1 (https=)
TW (1) TW284908B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662469A (en) * 1991-12-13 1997-09-02 Tokyo Electron Tohoku Kabushiki Kaisha Heat treatment method
US5429498A (en) * 1991-12-13 1995-07-04 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
DE69221152T2 (de) * 1992-05-15 1998-02-19 Shinetsu Quartz Prod Vertikale wärmebehandlungsvorrichtung und wärmeisolationsmaterial
US5445521A (en) * 1993-05-31 1995-08-29 Tokyo Electron Kabushiki Kaisha Heat treating method and device
US5417803A (en) * 1993-09-29 1995-05-23 Intel Corporation Method for making Si/SiC composite material
KR0161417B1 (ko) * 1995-07-11 1999-02-01 김광호 가스흐름이 개선된 종형확산로
JP3471144B2 (ja) * 1995-09-06 2003-11-25 東京エレクトロン株式会社 縦型熱処理装置及びその断熱構造体並びに遮熱板
US5605454A (en) * 1995-10-12 1997-02-25 Vlsi Technology, Inc. Four port tube to extend the life of quartz tubes used for the well drive process
FR2747402B1 (fr) * 1996-04-15 1998-05-22 Sgs Thomson Microelectronics Four a diffusion
DE19626355A1 (de) * 1996-06-18 1998-01-15 Joern Rohde Golfschlägerschaft
DE29611438U1 (de) * 1996-06-18 1996-09-05 Rohde, Jörn, 10707 Berlin Golfschlägerschaft
JP3270730B2 (ja) * 1997-03-21 2002-04-02 株式会社日立国際電気 基板処理装置及び基板処理方法
JP3396431B2 (ja) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置
JP3644880B2 (ja) * 2000-06-20 2005-05-11 東京エレクトロン株式会社 縦型熱処理装置
JP4633269B2 (ja) * 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US7128570B2 (en) * 2004-01-21 2006-10-31 Asm International N.V. Method and apparatus for purging seals in a thermal reactor
JP4508893B2 (ja) * 2004-02-02 2010-07-21 エーエスエム インターナショナル エヌ．ヴェー． 半導体処理方法、半導体処理システム及び反応チャンバにガスを供給する方法
US7351057B2 (en) * 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
WO2008016143A1 (fr) * 2006-08-04 2008-02-07 Hitachi Kokusai Electric Inc. Appareil de traitement de substrat et procédé de fabrication d'un dispositif semi-conducteur
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
KR102678733B1 (ko) * 2015-12-04 2024-06-26 어플라이드 머티어리얼스, 인코포레이티드 Hdp-cvd 챔버 아킹을 방지하기 위한 첨단 코팅 방법 및 재료들
US10490431B2 (en) * 2017-03-10 2019-11-26 Yield Engineering Systems, Inc. Combination vacuum and over-pressure process chamber and methods related thereto
KR20230042572A (ko) * 2021-09-21 2023-03-28 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 세정하는 방법
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815144B2 (ja) * 1986-04-18 1996-02-14 株式会社日立製作所 縦型処理装置
KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
US4943235A (en) * 1987-11-27 1990-07-24 Tel Sagami Limited Heat-treating apparatus
JP2654996B2 (ja) * 1988-08-17 1997-09-17 東京エレクトロン株式会社 縦型熱処理装置
KR0147044B1 (ko) * 1990-01-23 1998-11-02 카자마 젠쥬 배기 시스템을 가지는 열처리장치
JPH03249178A (ja) * 1990-02-27 1991-11-07 Ulvac B T U Kk Ｃｖｄ装置
JP3007432B2 (ja) * 1991-02-19 2000-02-07 東京エレクトロン株式会社 熱処理装置
JP3108460B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置
JP3108459B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置

Also Published As

Publication number Publication date
US5330352A (en) 1994-07-19
JPH05217929A (ja) 1993-08-27
TW284908B (https=) 1996-09-01
KR930016142A (ko) 1993-08-26

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