KR100214111B1 - 전자 장치 위에 패턴화된 도막을 형성시키는 방법 - Google Patents

전자 장치 위에 패턴화된 도막을 형성시키는 방법 Download PDF

Info

Publication number
KR100214111B1
KR100214111B1 KR1019920006718A KR920006718A KR100214111B1 KR 100214111 B1 KR100214111 B1 KR 100214111B1 KR 1019920006718 A KR1019920006718 A KR 1019920006718A KR 920006718 A KR920006718 A KR 920006718A KR 100214111 B1 KR100214111 B1 KR 100214111B1
Authority
KR
South Korea
Prior art keywords
coating
support
initiator
hydrogen silsesquioxane
silsesquioxane resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920006718A
Other languages
English (en)
Korean (ko)
Other versions
KR920020259A (ko
Inventor
앤드류 할루스카 로렌
윈톤 마이클 케이트
Original Assignee
맥켈러 로버트 루이스
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 맥켈러 로버트 루이스, 다우 코닝 코포레이션 filed Critical 맥켈러 로버트 루이스
Publication of KR920020259A publication Critical patent/KR920020259A/ko
Application granted granted Critical
Publication of KR100214111B1 publication Critical patent/KR100214111B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
KR1019920006718A 1991-04-22 1992-04-22 전자 장치 위에 패턴화된 도막을 형성시키는 방법 Expired - Fee Related KR100214111B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7/688,418 1991-04-22
US07/688,418 US5238787A (en) 1991-04-22 1991-04-22 Photodelineable coatings from hydrogen silsesquioxane resin
US07/688,418 1991-04-22

Publications (2)

Publication Number Publication Date
KR920020259A KR920020259A (ko) 1992-11-20
KR100214111B1 true KR100214111B1 (ko) 1999-08-02

Family

ID=24764345

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920006718A Expired - Fee Related KR100214111B1 (ko) 1991-04-22 1992-04-22 전자 장치 위에 패턴화된 도막을 형성시키는 방법

Country Status (7)

Country Link
US (2) US5238787A (cg-RX-API-DMAC7.html)
EP (1) EP0510872B1 (cg-RX-API-DMAC7.html)
JP (1) JP2997124B2 (cg-RX-API-DMAC7.html)
KR (1) KR100214111B1 (cg-RX-API-DMAC7.html)
CA (1) CA2064971A1 (cg-RX-API-DMAC7.html)
DE (1) DE69222461T2 (cg-RX-API-DMAC7.html)
TW (1) TW223153B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102155966B1 (ko) 2019-09-04 2020-09-14 성인식 농작물 지지대

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693455A (en) * 1994-09-02 1997-12-02 Motorola, Inc. Method for creating a pattern having step features in a photopolymer using a thermal mask
US5631120A (en) * 1994-09-02 1997-05-20 Motorola, Inc. Method of forming a pattern with step features in a photopolymer
JP3499032B2 (ja) * 1995-02-02 2004-02-23 ダウ コーニング アジア株式会社 放射線硬化性組成物、その硬化方法及びパターン形成方法
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US5733698A (en) * 1996-09-30 1998-03-31 Minnesota Mining And Manufacturing Company Release layer for photoreceptors
EP0857705B1 (en) * 1997-02-07 2002-07-31 Dow Corning Corporation Method of producing coatings on electronic substrates
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
EP0881668A3 (en) 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Deposition of an electrically insulating thin film with a low dielectric constant
US5958630A (en) * 1997-12-30 1999-09-28 Kabushiki Kaisha Toshiba Phase shifting mask and method of manufacturing the same
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
DE19815978B4 (de) * 1998-04-09 2004-01-08 Forschungszentrum Karlsruhe Gmbh Verfahren zur Herstellung von Klein- und Mikroteilen aus Keramik
GB9812425D0 (en) 1998-06-10 1998-08-05 Dow Corning Electroless metal disposition on silyl hyride functional resin
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6335152B1 (en) * 2000-05-01 2002-01-01 Advanced Micro Devices, Inc. Use of RTA furnace for photoresist baking
WO2003036387A2 (en) * 2001-10-19 2003-05-01 Koninklijke Philips Electronics N.V. Method of forming a pattern of sub-micron broad features
FR2872503B1 (fr) * 2004-07-05 2006-09-22 Commissariat Energie Atomique Procede de fabrication d'une ebauche de biopuce, ebauche et biopuce
JP4881313B2 (ja) * 2004-11-02 2012-02-22 ダウ・コーニング・コーポレイション レジスト組成物及びレジスト画像の形成方法
US20090206328A1 (en) * 2005-01-05 2009-08-20 Kimihiro Matsukawa Silicon-Containing Photosensitive Composition, Method for Forming Thin Film Pattern Using Same, Protective Film for Electronic Device, Gate Insulating Film And Thin Film Transistor
JP4925084B2 (ja) * 2005-09-14 2012-04-25 独立行政法人日本原子力研究開発機構 ケイ素系混合高分子材料による炭化ケイ素（ＳｉＣ）薄膜の合成法
EP2116900A4 (en) * 2007-03-01 2012-06-27 Asahi Glass Co Ltd PROCESSED SUBSTRATES WITH WATER-REPELLENT AREAS IN PATTERNS, MANUFACTURING PROCESS THEREFOR AND PROCESS FOR PRODUCING MEMBERS WITH PATTERNS PRODUCED FROM FUNCTIONAL MATERIALS
US8323866B2 (en) * 2008-07-08 2012-12-04 Massachusetts Institute Of Technology Inorganic resist sensitizer
US8158338B2 (en) * 2008-07-08 2012-04-17 Massachusetts Institute Of Technology Resist sensitizer
FI129480B (en) * 2018-08-10 2022-03-15 Pibond Oy Silanol-containing organic-inorganic hybrid coatings for high resolution patterning

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
FR2507608A1 (fr) * 1981-06-15 1982-12-17 Rhone Poulenc Spec Chim Compositions organopolysiloxaniques liquides photopolymerisables pour enduction de materiaux
US4693960A (en) * 1985-03-29 1987-09-15 International Business Machines Corporation Photolithographic etching process using organosilicon polymer composition
FR2597110A1 (fr) * 1986-04-14 1987-10-16 Rhone Poulenc Multi Tech Composition organopolysiloxane, potentiellement reticulable et utilisable notamment en microlithographie, et son procede d'application
EP0255303B1 (en) * 1986-07-25 1989-10-11 Oki Electric Industry Company, Limited Negative resist material, method for its manufacture and method for using it
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
US4889901A (en) * 1988-11-16 1989-12-26 Desoto, Inc. Ultraviolet-curable blends of acrylated polyurethanes and silsesquioxane oligomers having improved adhesion to glass
US5063297A (en) * 1989-06-08 1991-11-05 Minnesota Mining And Manufacturing Company Apparatus for detecting fluorescence of a luminescent material
US4999397A (en) * 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5110711A (en) * 1989-10-10 1992-05-05 International Business Machines Corporation Method for forming a pattern
US5098816A (en) * 1989-10-10 1992-03-24 International Business Machines Corporation Method for forming a pattern of a photoresist
US5021398A (en) * 1989-10-26 1991-06-04 Amp Incorporated Method of forming patterned oxide superconducting films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102155966B1 (ko) 2019-09-04 2020-09-14 성인식 농작물 지지대

Also Published As

Publication number Publication date
EP0510872B1 (en) 1997-10-01
US5348839A (en) 1994-09-20
KR920020259A (ko) 1992-11-20
TW223153B (cg-RX-API-DMAC7.html) 1994-05-01
DE69222461T2 (de) 1998-04-09
JP2997124B2 (ja) 2000-01-11
EP0510872A1 (en) 1992-10-28
JPH05204161A (ja) 1993-08-13
CA2064971A1 (en) 1992-10-23
DE69222461D1 (de) 1997-11-06
US5238787A (en) 1993-08-24

Similar Documents

Publication Publication Date Title
EP0510872B1 (en) Photodelineable coatings from hydrogen silsesquioxane resin
JP3317998B2 (ja) シリカ前駆物質での下地のコーティング方法
US4615782A (en) Intermediate layer material of three-layer resist system and method of forming resist pattern
EP0114229B1 (en) Method of forming a lift-off mask with improved oxygen barrier layer
KR100454618B1 (ko) 전자비임에의한수소실세스퀴옥산수지의경화법
EP1846479B1 (en) Siloxane resin coating
US6764812B1 (en) Plasma deposited selective wetting material
JPH05106054A (ja) 超小形電子デバイスおよび基材用コーテイング
EP1825330B1 (en) Method for forming anti-reflective coating
WO2012176291A1 (ja) シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
JPH09176516A (ja) 電子保護コーティングの形成方法
WO2011158119A2 (ja) シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
US5366852A (en) Methods for treating photoresists
JPH06322318A (ja) セラミック塗料及びその塗膜形成方法
JPH06148887A (ja) 感光性樹脂組成物
US4596761A (en) Graft polymerized SiO2 lithographic masks
KR19980071143A (ko) 전자 기판상의 피복물 형성방법
WO1985002030A1 (en) GRAFT POLYMERIZED SiO2 LITHOGRAPHIC MASKS
JPH045658A (ja) ３層レジスト中間層用材料およびパターン形成方法
US6416938B1 (en) Photosensitive organosilicon films
JPH08215637A (ja) 基材上に不溶性コーティングを形成する方法
CA2010030C (en) Method for transferring patterns on silicone ladder type resin and etching solution used in such method
US4863834A (en) Silicon-containing polymers as resists
JPH10229079A (ja) 基材上にコーティングを形成する方法
JP3563138B2 (ja) 感光性樹脂組成物を用いたパターン形成方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U11-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

Fee payment year number: 4

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20030514

Year of fee payment: 5

PR1001 Payment of annual fee

Fee payment year number: 5

St.27 status event code: A-4-4-U10-U11-oth-PR1001

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Not in force date: 20040519

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20040519

St.27 status event code: N-4-6-H10-H13-oth-PC1903

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000