KR100212096B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR100212096B1
KR100212096B1 KR1019910017597A KR910017597A KR100212096B1 KR 100212096 B1 KR100212096 B1 KR 100212096B1 KR 1019910017597 A KR1019910017597 A KR 1019910017597A KR 910017597 A KR910017597 A KR 910017597A KR 100212096 B1 KR100212096 B1 KR 100212096B1
Authority
KR
South Korea
Prior art keywords
data line
signal
semiconductor memory
memory device
information
Prior art date
Application number
KR1019910017597A
Other languages
English (en)
Korean (ko)
Other versions
KR920008753A (ko
Inventor
다께시 사까따
가쯔따까 기무라
기요오 이또
Original Assignee
가나이 쓰도무
가부시끼가이샤 히다치 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쓰도무, 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가나이 쓰도무
Publication of KR920008753A publication Critical patent/KR920008753A/ko
Application granted granted Critical
Publication of KR100212096B1 publication Critical patent/KR100212096B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019910017597A 1990-10-11 1991-10-08 반도체기억장치 KR100212096B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27039890A JP3350045B2 (ja) 1990-10-11 1990-10-11 半導体記憶装置
JP90-270398 1990-10-11

Publications (2)

Publication Number Publication Date
KR920008753A KR920008753A (ko) 1992-05-28
KR100212096B1 true KR100212096B1 (ko) 1999-08-02

Family

ID=17485709

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017597A KR100212096B1 (ko) 1990-10-11 1991-10-08 반도체기억장치

Country Status (3)

Country Link
US (1) US5309393A (ja)
JP (1) JP3350045B2 (ja)
KR (1) KR100212096B1 (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5625602A (en) * 1991-11-18 1997-04-29 Kabushiki Kaisha Toshiba NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines
US5539612A (en) * 1992-09-08 1996-07-23 Texas Instruments Incorporated Intermediate structure for forming a storage capacitor
JP3154843B2 (ja) * 1992-11-26 2001-04-09 株式会社東芝 半導体記憶装置
KR950012731A (ko) * 1993-10-25 1995-05-16 사토 후미오 반도체기억장치 및 그 제조방법
US5717625A (en) * 1993-12-27 1998-02-10 Kabushiki Kaisha Toshiba Semiconductor memory device
JP3272888B2 (ja) * 1993-12-28 2002-04-08 株式会社東芝 半導体記憶装置
US5546204A (en) * 1994-05-26 1996-08-13 Honeywell Inc. TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon
US5541870A (en) * 1994-10-28 1996-07-30 Symetrix Corporation Ferroelectric memory and non-volatile memory cell for same
JP3397499B2 (ja) * 1994-12-12 2003-04-14 株式会社東芝 半導体記憶装置
DE19711998A1 (de) 1997-03-13 1998-09-17 Francotyp Postalia Gmbh Postverarbeitungssystem mit einer über Personalcomputer gesteuerten druckenden Maschinen-Basisstation
US5978282A (en) * 1997-04-03 1999-11-02 Texas Instruments Incorporated Low power line system and method
JP2000173269A (ja) * 1998-12-08 2000-06-23 Mitsubishi Electric Corp 半導体記憶装置
WO2001073846A1 (en) 2000-03-29 2001-10-04 Hitachi, Ltd. Semiconductor device
US6515914B2 (en) * 2001-03-21 2003-02-04 Micron Technology, Inc. Memory device and method having data path with multiple prefetch I/O configurations
US7065546B2 (en) * 2002-04-09 2006-06-20 Sony Electronics Inc. Method of performing quantization within a multimedia bitstream utilizing division-free instructions
US6760266B2 (en) * 2002-06-28 2004-07-06 Freescale Semiconductor, Inc. Sense amplifier and method for performing a read operation in a MRAM
JP2004030849A (ja) * 2002-06-28 2004-01-29 Fujitsu Ltd データの一部書き換え機能を有する半導体不揮発性メモリ
US6677633B2 (en) 2002-09-24 2004-01-13 Hitachi, Ltd. Semiconductor device
US6982911B2 (en) * 2004-03-18 2006-01-03 Infineon Technologies Ag Memory device with common row interface
KR100819100B1 (ko) * 2007-01-04 2008-04-03 삼성전자주식회사 반도체 메모리 장치에서의 데이터 라인 배치 구조 및 라인드라이빙 방법
US8341271B2 (en) * 2008-06-30 2012-12-25 Sibeam, Inc. Device discovery in a wireless communication system
US9264762B2 (en) * 2008-06-30 2016-02-16 Sibeam, Inc. Dispatch capability using a single physical interface
US20090327572A1 (en) * 2008-06-30 2009-12-31 In Sung Cho Exchanging information between components coupled with an a i2c bus via separate banks
US9531986B2 (en) * 2008-06-30 2016-12-27 Sibeam, Inc. Bitmap device identification in a wireless communication system
US20090327547A1 (en) * 2008-06-30 2009-12-31 In Sung Cho I2c bus compatible with hdmi
US8116333B2 (en) * 2008-06-30 2012-02-14 Sibeam, Inc. Connection control in a wireless communication system
JP6298657B2 (ja) * 2013-03-07 2018-03-20 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4648074A (en) * 1984-06-29 1987-03-03 Rca Corporation Reference circuit with semiconductor memory array
US4648073A (en) * 1984-12-31 1987-03-03 International Business Machines Corporation Sequential shared access lines memory cells
US4717261A (en) * 1985-01-16 1988-01-05 Casio Computer Co., Ltd. Recording/reproducing apparatus including synthesized voice converter
US4939690A (en) * 1987-12-28 1990-07-03 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
US4996669A (en) * 1989-03-08 1991-02-26 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND memory cell structure

Also Published As

Publication number Publication date
JP3350045B2 (ja) 2002-11-25
US5309393A (en) 1994-05-03
JPH04147490A (ja) 1992-05-20
KR920008753A (ko) 1992-05-28

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