KR0165857B1 - 종형 열처리 장치 - Google Patents
종형 열처리 장치 Download PDFInfo
- Publication number
- KR0165857B1 KR0165857B1 KR1019920002283A KR920002283A KR0165857B1 KR 0165857 B1 KR0165857 B1 KR 0165857B1 KR 1019920002283 A KR1019920002283 A KR 1019920002283A KR 920002283 A KR920002283 A KR 920002283A KR 0165857 B1 KR0165857 B1 KR 0165857B1
- Authority
- KR
- South Korea
- Prior art keywords
- heat treatment
- clean gas
- air space
- exhaust
- vertical heat
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 86
- 238000007599 discharging Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000428 dust Substances 0.000 claims description 14
- 239000002516 radical scavenger Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000007664 blowing Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 86
- 235000012431 wafers Nutrition 0.000 description 70
- 238000012545 processing Methods 0.000 description 18
- 238000012546 transfer Methods 0.000 description 13
- 238000007689 inspection Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 230000003749 cleanliness Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 238000011068 loading method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000002341 toxic gas Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241000282472 Canis lupus familiaris Species 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ventilation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP91-103694 | 1991-02-26 | ||
JP03103694A JP3108460B2 (ja) | 1991-02-26 | 1991-02-26 | 縦型熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920017200A KR920017200A (ko) | 1992-09-26 |
KR0165857B1 true KR0165857B1 (ko) | 1999-02-01 |
Family
ID=14360891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920002283A KR0165857B1 (ko) | 1991-02-26 | 1992-02-15 | 종형 열처리 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5226812A (ja) |
JP (1) | JP3108460B2 (ja) |
KR (1) | KR0165857B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100598430B1 (ko) * | 2002-04-11 | 2006-07-10 | 에스펙 가부시키가이샤 | 필터발진 처리기능을 갖는 열처리장치 |
KR101108317B1 (ko) * | 2004-12-31 | 2012-01-25 | 엘지디스플레이 주식회사 | 열처리 장치 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05217929A (ja) * | 1992-01-31 | 1993-08-27 | Tokyo Electron Tohoku Kk | 酸化拡散処理装置 |
US5378145A (en) * | 1992-07-15 | 1995-01-03 | Tokyo Electron Kabushiki Kaisha | Treatment system and treatment apparatus |
JP3134137B2 (ja) * | 1993-01-13 | 2001-02-13 | 東京エレクトロン株式会社 | 縦型処理装置 |
TW273574B (ja) * | 1993-12-10 | 1996-04-01 | Tokyo Electron Co Ltd | |
JP3982844B2 (ja) * | 1995-01-12 | 2007-09-26 | 株式会社日立国際電気 | 半導体製造装置及び半導体の製造方法 |
US5662470A (en) * | 1995-03-31 | 1997-09-02 | Asm International N.V. | Vertical furnace |
KR100626386B1 (ko) * | 2004-09-20 | 2006-09-20 | 삼성전자주식회사 | 반도체 기판 제조에 사용되는 기판 처리 장치 및 기판처리 방법 |
US9460945B2 (en) * | 2006-11-06 | 2016-10-04 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus for semiconductor devices |
JP5144207B2 (ja) * | 2006-11-06 | 2013-02-13 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
KR101166659B1 (ko) | 2010-01-07 | 2012-07-18 | 장종래 | 내지를 감싸는 표지구조를 갖는 졸업 앨범 |
JP5770042B2 (ja) * | 2011-08-04 | 2015-08-26 | 東京エレクトロン株式会社 | 熱処理装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4610628A (en) * | 1983-12-28 | 1986-09-09 | Denkoh Co., Ltd. | Vertical furnace for heat-treating semiconductor |
KR960001161B1 (ko) * | 1987-09-29 | 1996-01-19 | 도오교오 에레구토론 사가미 가부시끼가이샤 | 열처리장치 |
US4981436A (en) * | 1988-08-08 | 1991-01-01 | Tel Sagami Limited | Vertical type heat-treatment apparatus |
-
1991
- 1991-02-26 JP JP03103694A patent/JP3108460B2/ja not_active Expired - Lifetime
-
1992
- 1992-02-04 US US07/831,066 patent/US5226812A/en not_active Expired - Lifetime
- 1992-02-15 KR KR1019920002283A patent/KR0165857B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100598430B1 (ko) * | 2002-04-11 | 2006-07-10 | 에스펙 가부시키가이샤 | 필터발진 처리기능을 갖는 열처리장치 |
KR101108317B1 (ko) * | 2004-12-31 | 2012-01-25 | 엘지디스플레이 주식회사 | 열처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR920017200A (ko) | 1992-09-26 |
JPH04269825A (ja) | 1992-09-25 |
JP3108460B2 (ja) | 2000-11-13 |
US5226812A (en) | 1993-07-13 |
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