KR0165112B1 - 반도체 웨이퍼의 다단 진공처리장치 및 방법 - Google Patents

반도체 웨이퍼의 다단 진공처리장치 및 방법 Download PDF

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Publication number
KR0165112B1
KR0165112B1 KR1019900007201A KR900007201A KR0165112B1 KR 0165112 B1 KR0165112 B1 KR 0165112B1 KR 1019900007201 A KR1019900007201 A KR 1019900007201A KR 900007201 A KR900007201 A KR 900007201A KR 0165112 B1 KR0165112 B1 KR 0165112B1
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KR
South Korea
Prior art keywords
chamber
vacuum
chambers
processing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019900007201A
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English (en)
Korean (ko)
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KR900019192A (ko
Inventor
테프맨 애비
그룬스 하워드
소메크 새손
메이단 단
Original Assignee
제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 제임스 조셉 드롱, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 제임스 조셉 드롱
Publication of KR900019192A publication Critical patent/KR900019192A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1019900007201A 1989-05-19 1990-05-19 반도체 웨이퍼의 다단 진공처리장치 및 방법 Expired - Lifetime KR0165112B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35500889A 1989-05-19 1989-05-19
US355,008 1989-05-19

Publications (2)

Publication Number Publication Date
KR900019192A KR900019192A (ko) 1990-12-24
KR0165112B1 true KR0165112B1 (ko) 1999-02-01

Family

ID=23395873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900007201A Expired - Lifetime KR0165112B1 (ko) 1989-05-19 1990-05-19 반도체 웨이퍼의 다단 진공처리장치 및 방법

Country Status (4)

Country Link
EP (2) EP0398365B1 (https=)
JP (1) JPH0793348B2 (https=)
KR (1) KR0165112B1 (https=)
DE (1) DE69028440T2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367455B1 (ko) * 2000-03-21 2003-01-14 일진나노텍 주식회사 탄소나노튜브 합성용 다중 진공챔버 플라즈마화학기상증착장치 및 이 장치를 이용한 탄소나노튜브 합성방법
WO2013116485A1 (en) * 2012-01-31 2013-08-08 Applied Materials, Inc. A rotary substrate processing system
KR101329664B1 (ko) * 2009-11-12 2013-11-15 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치 및 진공처리장치의 운전방법
KR20250000224U (ko) 2023-07-27 2025-02-04 유병만 리본 걸림에 의한 잼 방지 장치

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5259881A (en) * 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
JP2644912B2 (ja) 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
USRE39756E1 (en) 1990-08-29 2007-08-07 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
USRE39823E1 (en) 1990-08-29 2007-09-11 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
JP2595132B2 (ja) * 1990-11-26 1997-03-26 株式会社日立製作所 真空処理装置
US5643366A (en) * 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
KR100382292B1 (ko) * 1995-02-15 2003-07-22 가부시끼가이샤 히다치 세이사꾸쇼 반도체장치의제조방법및반도체제조장치
JP3769802B2 (ja) * 1996-02-09 2006-04-26 株式会社日立製作所 半導体装置の製造方法
DE19628102A1 (de) 1996-07-12 1998-01-15 Bayerische Motoren Werke Ag Vakuumbeschichtungsanlage mit einer Beschichtungskammer und zumindest einer Quellenkammer
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US6213704B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
US6206176B1 (en) 1998-05-20 2001-03-27 Applied Komatsu Technology, Inc. Substrate transfer shuttle having a magnetic drive
US6176668B1 (en) 1998-05-20 2001-01-23 Applied Komatsu Technology, Inc. In-situ substrate transfer shuttle
US6215897B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Automated substrate processing system
US7077159B1 (en) * 1998-12-23 2006-07-18 Applied Materials, Inc. Processing apparatus having integrated pumping system
DE19922167A1 (de) * 1999-05-12 2000-11-16 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6440261B1 (en) * 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
US6298685B1 (en) 1999-11-03 2001-10-09 Applied Materials, Inc. Consecutive deposition system
US6949143B1 (en) 1999-12-15 2005-09-27 Applied Materials, Inc. Dual substrate loadlock process equipment
EP1126508A3 (en) * 2000-02-16 2005-03-30 Applied Materials, Inc. Processing apparatus having integrated pumping system
EP1319243A2 (en) 2000-09-15 2003-06-18 Applied Materials, Inc. Double dual slot load lock for process equipment
KR100375135B1 (ko) * 2000-10-13 2003-03-08 주식회사 에버테크 웨이퍼 프로세스 방법
KR20020071393A (ko) * 2001-03-06 2002-09-12 주식회사 아이피에스 자동연속 웨이퍼가공시스템 및 그를 이용한 웨이퍼가공방법
KR20020072449A (ko) * 2001-03-10 2002-09-16 주식회사 아이피에스 자동연속 웨이퍼가공시스템 및 그를 이용한 웨이퍼가공방법
KR20020076039A (ko) * 2001-03-27 2002-10-09 주식회사 아이피에스 자동연속 웨이퍼가공시스템 및 그를 이용한 웨이퍼가공방법
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
JP2002324829A (ja) * 2001-07-13 2002-11-08 Tokyo Electron Ltd 処理システム
JP4821074B2 (ja) * 2001-08-31 2011-11-24 東京エレクトロン株式会社 処理システム
US7316966B2 (en) 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
JP4222068B2 (ja) 2003-03-10 2009-02-12 東京エレクトロン株式会社 被処理体の搬送装置
JP3609077B1 (ja) * 2003-07-09 2005-01-12 東京エレクトロン株式会社 高圧熱処理装置
US7207766B2 (en) 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7497414B2 (en) 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
US20060045668A1 (en) * 2004-07-19 2006-03-02 Grabowski Al W System for handling of wafers within a process tool
US7845891B2 (en) 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
JP2009062604A (ja) * 2007-09-10 2009-03-26 Tokyo Electron Ltd 真空処理システムおよび基板搬送方法
KR100866094B1 (ko) * 2008-04-28 2008-10-30 주식회사 싸이맥스 독립적으로 구동하는 적층식 이중 아암 로봇
GB2514974A (en) * 2012-03-30 2014-12-10 Canon Anelva Corp Plasma processing apparatus and substrate processing system
CN104752152B (zh) * 2013-12-29 2018-07-06 北京北方华创微电子装备有限公司 一种沟槽刻蚀方法及刻蚀装置
CN107942918B (zh) * 2017-12-22 2023-04-18 大连华锐重工集团股份有限公司 自适应式干式真空机械泵电控系统及控制方法
JP7391869B2 (ja) 2018-05-15 2023-12-05 エヴァテック・アーゲー 基板真空処理装置及び方法
CN109161867B (zh) * 2018-10-11 2023-08-08 中国科学技术大学 可分离式真空互联系统
US11637030B2 (en) 2019-06-18 2023-04-25 Kla Corporation Multi-stage, multi-zone substrate positioning systems

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8332394D0 (en) * 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
CA1287594C (en) * 1986-04-04 1991-08-13 Miroslav Eror Method and apparatus for handling and processing wafer like materials
US4715764A (en) * 1986-04-28 1987-12-29 Varian Associates, Inc. Gate valve for wafer processing system
GB8709064D0 (en) * 1986-04-28 1987-05-20 Varian Associates Wafer handling arm
WO1987007309A1 (en) * 1986-05-19 1987-12-03 Novellus Systems, Inc. Deposition apparatus with automatic cleaning means and method of use
EP0272141B1 (en) * 1986-12-19 1994-03-02 Applied Materials, Inc. Multiple chamber integrated process system
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
JPS63303059A (ja) * 1987-05-30 1988-12-09 Tokuda Seisakusho Ltd 真空処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367455B1 (ko) * 2000-03-21 2003-01-14 일진나노텍 주식회사 탄소나노튜브 합성용 다중 진공챔버 플라즈마화학기상증착장치 및 이 장치를 이용한 탄소나노튜브 합성방법
KR101329664B1 (ko) * 2009-11-12 2013-11-15 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치 및 진공처리장치의 운전방법
KR101350872B1 (ko) * 2009-11-12 2014-01-13 가부시키가이샤 히다치 하이테크놀로지즈 반도체 피처리 기판의 진공처리시스템 및 반도체 피처리 기판의 진공처리방법
WO2013116485A1 (en) * 2012-01-31 2013-08-08 Applied Materials, Inc. A rotary substrate processing system
KR20250000224U (ko) 2023-07-27 2025-02-04 유병만 리본 걸림에 의한 잼 방지 장치

Also Published As

Publication number Publication date
EP0398365A2 (en) 1990-11-22
EP0684630A3 (https=) 1996-01-03
JPH0793348B2 (ja) 1995-10-09
DE69028440D1 (de) 1996-10-17
EP0398365A3 (en) 1991-06-12
KR900019192A (ko) 1990-12-24
EP0398365B1 (en) 1996-09-11
JPH0319252A (ja) 1991-01-28
DE69028440T2 (de) 1997-02-20
EP0684630A2 (en) 1995-11-29

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