KR0156012B1 - 에칭처리시의 표면 보호방법 - Google Patents

에칭처리시의 표면 보호방법 Download PDF

Info

Publication number
KR0156012B1
KR0156012B1 KR1019920020353A KR920020353A KR0156012B1 KR 0156012 B1 KR0156012 B1 KR 0156012B1 KR 1019920020353 A KR1019920020353 A KR 1019920020353A KR 920020353 A KR920020353 A KR 920020353A KR 0156012 B1 KR0156012 B1 KR 0156012B1
Authority
KR
South Korea
Prior art keywords
radiation
etching
adhesive tape
surface protection
radiation curable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019920020353A
Other languages
English (en)
Korean (ko)
Other versions
KR930011131A (ko
Inventor
신이치 이시와타
가즈시 이와모토
미치오 우에야마
이사무 노구치
Original Assignee
도모마쓰 겐고
후루까와 덴끼 고오교오 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도모마쓰 겐고, 후루까와 덴끼 고오교오 가부시끼 가이샤 filed Critical 도모마쓰 겐고
Publication of KR930011131A publication Critical patent/KR930011131A/ko
Application granted granted Critical
Publication of KR0156012B1 publication Critical patent/KR0156012B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

Landscapes

  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
KR1019920020353A 1991-11-01 1992-10-31 에칭처리시의 표면 보호방법 Expired - Lifetime KR0156012B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-313075 1991-11-01
JP31307591 1991-11-01

Publications (2)

Publication Number Publication Date
KR930011131A KR930011131A (ko) 1993-06-23
KR0156012B1 true KR0156012B1 (ko) 1998-12-01

Family

ID=18036894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920020353A Expired - Lifetime KR0156012B1 (ko) 1991-11-01 1992-10-31 에칭처리시의 표면 보호방법

Country Status (5)

Country Link
US (1) US5300172A (enExample)
EP (1) EP0539973A3 (enExample)
KR (1) KR0156012B1 (enExample)
MY (1) MY108386A (enExample)
TW (1) TW230830B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399239A (en) * 1992-12-18 1995-03-21 Ceridian Corporation Method of fabricating conductive structures on substrates
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
JP3417008B2 (ja) * 1993-11-04 2003-06-16 株式会社デンソー 半導体ウエハのエッチング方法
US5731243A (en) * 1995-09-05 1998-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cleaning residue on a semiconductor wafer bonding pad
EP0926732A3 (en) * 1997-12-10 2001-01-03 Nitto Denko Corporation Process for producing semiconductor device and pressure-sensitive adhesive sheet for surface protection
US6214717B1 (en) * 1998-11-16 2001-04-10 Taiwan Semiconductor Manufacturing Company Method for adding plasma treatment on bond pad to prevent bond pad staining problems
JP3763710B2 (ja) * 1999-09-29 2006-04-05 信越化学工業株式会社 防塵用カバーフィルム付きウエハ支持台及びその製造方法
DE19962431B4 (de) 1999-12-22 2005-10-20 Micronas Gmbh Verfahren zum Herstellen einer Halbleiteranordnung mit Haftzone für eine Passivierungsschicht
US6524881B1 (en) * 2000-08-25 2003-02-25 Micron Technology, Inc. Method and apparatus for marking a bare semiconductor die
KR100379824B1 (ko) * 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판
US7169685B2 (en) * 2002-02-25 2007-01-30 Micron Technology, Inc. Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive
US7201969B2 (en) 2002-03-27 2007-04-10 Mitsui Chemicals, Inc. Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film
WO2003101171A1 (en) * 2002-05-24 2003-12-04 Koninklijke Philips Electronics N.V. Method suitable for transferring a component supported by a carrier to a desired position on a substrate, and a device designed for this
US7316844B2 (en) * 2004-01-16 2008-01-08 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
JP2005303158A (ja) * 2004-04-15 2005-10-27 Nec Corp デバイスの形成方法
KR101188425B1 (ko) * 2005-08-24 2012-10-05 엘지디스플레이 주식회사 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법
US7695890B2 (en) 2005-09-09 2010-04-13 Brewer Science Inc. Negative photoresist for silicon KOH etch without silicon nitride
US7709178B2 (en) 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
US8192642B2 (en) 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
WO2021102610A1 (zh) * 2019-11-25 2021-06-03 邦弗特新材料股份有限公司 一种多涂层辐射固化预涂装膜及其制备方法
GB2603905B (en) * 2021-02-17 2023-12-13 Paragraf Ltd A method for the manufacture of an improved graphene substrate and applications therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1487201A (en) * 1974-12-20 1977-09-28 Lucas Electrical Ltd Method of manufacturing semi-conductor devices
US3960623A (en) * 1974-03-14 1976-06-01 General Electric Company Membrane mask for selective semiconductor etching
EP0191534B1 (en) * 1985-02-14 1990-05-23 Bando Chemical Industries, Ltd. A method for dicing a semiconductor wafer
JPS63164336A (ja) * 1986-12-26 1988-07-07 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
JPH03135048A (ja) * 1989-10-20 1991-06-10 Fujitsu Ltd 半導体装置の製造方法
CA2031776A1 (en) * 1989-12-08 1991-06-09 Masanori Nishiguchi Pickup method and the pickup apparatus for chip-type part
JP3181284B2 (ja) * 1990-01-12 2001-07-03 旭電化工業株式会社 エネルギー線反応性粘着剤組成物

Also Published As

Publication number Publication date
MY108386A (en) 1996-09-30
US5300172A (en) 1994-04-05
EP0539973A2 (en) 1993-05-05
TW230830B (enExample) 1994-09-21
EP0539973A3 (en) 1995-07-12
KR930011131A (ko) 1993-06-23

Similar Documents

Publication Publication Date Title
KR0156012B1 (ko) 에칭처리시의 표면 보호방법
EP0999250B1 (en) Pressure sensitive adhesive sheet for use in semiconductor wafer working
US5955512A (en) Pressure sensitive adhesive composition and sheet having layer thereof
US5637395A (en) Thin adhesive sheet for working semiconductor wafers
CN1173000C (zh) 用于粘合晶片的压敏粘合剂片
KR100537971B1 (ko) 베이스재료및그를사용하는접착테이프
US6793762B1 (en) Method of using a pressure sensitive adhesive sheet
KR101029235B1 (ko) 다이싱용 점착 시트 및 다이싱 방법
EP0157508A2 (en) Thin adhesive sheet for use in working semiconductor wafers
GB2312214A (en) Energy beam curable pressure sensitive adhesive composition and use thereof
KR20000017531A (ko) 양면점착시트 및 그 사용 방법
CN101955737A (zh) 表面保护片
JP2023043724A (ja) 半導体加工用テープ、及び半導体チップの製造方法
CN1394930A (zh) 抗静电切割带
JP5566774B2 (ja) 放射線硬化性半導体ウエハ表面保護用粘着テープ
JP3495388B2 (ja) 半導体ウエハダイシング用粘着テープ
JPH09298173A (ja) ウエハ保護用粘着シート
JPH0366772A (ja) 放射線硬化性粘着テープ
JP3265656B2 (ja) エッチング処理時の表面保護方法
JPH01249878A (ja) 半導体ウエハ固定用放射線硬化性粘着テープ
KR100323949B1 (ko) 자외선 경화형 점착제 조성물 및 반도체 웨이퍼 가공용점착시트
JPH0630353B2 (ja) 半導体ウエハの保護方法
JP3481307B2 (ja) 半導体ウエハ表面保護用粘着テープ
JP7781872B2 (ja) バックグラインド用粘着性フィルムおよび電子装置の製造方法
JP2662033B2 (ja) 放射線硬化性粘着テープ

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

FPAY Annual fee payment

Payment date: 20120629

Year of fee payment: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

EXPY Expiration of term
PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20121101

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000