KR0138609B1 - 체임버에의 가스공급방법 - Google Patents

체임버에의 가스공급방법

Info

Publication number
KR0138609B1
KR0138609B1 KR1019940025874A KR19940025874A KR0138609B1 KR 0138609 B1 KR0138609 B1 KR 0138609B1 KR 1019940025874 A KR1019940025874 A KR 1019940025874A KR 19940025874 A KR19940025874 A KR 19940025874A KR 0138609 B1 KR0138609 B1 KR 0138609B1
Authority
KR
South Korea
Prior art keywords
line
chamber
gas supply
pressure
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940025874A
Other languages
English (en)
Korean (ko)
Other versions
KR950012566A (ko
Inventor
유키오 미나미
노부카주 이케다
Original Assignee
키요하라 마사코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 키요하라 마사코 filed Critical 키요하라 마사코
Publication of KR950012566A publication Critical patent/KR950012566A/ko
Application granted granted Critical
Publication of KR0138609B1 publication Critical patent/KR0138609B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H10P95/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/008—Feed or outlet control devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87249—Multiple inlet with multiple outlet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining
    • Y10T137/87499—Fluid actuated or retarded

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Pipeline Systems (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Control Of Fluid Pressure (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019940025874A 1993-10-27 1994-10-10 체임버에의 가스공급방법 Expired - Fee Related KR0138609B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26868993A JP3332053B2 (ja) 1993-10-27 1993-10-27 チャンバーへのガス供給方法
JP93-268689 1993-10-27

Publications (2)

Publication Number Publication Date
KR950012566A KR950012566A (ko) 1995-05-16
KR0138609B1 true KR0138609B1 (ko) 1998-06-15

Family

ID=17462022

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940025874A Expired - Fee Related KR0138609B1 (ko) 1993-10-27 1994-10-10 체임버에의 가스공급방법

Country Status (8)

Country Link
US (1) US5488967A (enExample)
EP (1) EP0651432B1 (enExample)
JP (1) JP3332053B2 (enExample)
KR (1) KR0138609B1 (enExample)
CA (1) CA2134426C (enExample)
DE (1) DE69417682T2 (enExample)
SG (1) SG45144A1 (enExample)
TW (1) TW267235B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483434B1 (ko) * 1998-03-04 2005-08-31 삼성전자주식회사 반도체장치제조설비

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TW342429B (en) * 1995-07-14 1998-10-11 Tadahiro Omi Fluid control system and valve used in it
US5865205A (en) * 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
US6228773B1 (en) 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
US6050132A (en) * 1998-06-15 2000-04-18 Capria; Michael Method and apparatus for hyperbaric chamber gas discharge and pressure management
US6082414A (en) * 1998-12-03 2000-07-04 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for replacing an attachment on a vacuum chamber
JP2000271471A (ja) 1999-03-24 2000-10-03 Nippon M K S Kk 液体ソース供給システム及びその洗浄方法、気化器
JP3579763B2 (ja) 1999-07-01 2004-10-20 日本酸素株式会社 ガス供給装置及び方法
FR2797997B1 (fr) * 1999-08-26 2002-04-05 Cit Alcatel Procede et dispositif pour le traitement de substrat sous vide par plasma
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
US6223770B1 (en) * 1999-09-29 2001-05-01 Lsi Logic Corporation Vacuum valve interface
US6129108A (en) * 1999-12-03 2000-10-10 United Semiconductor Corp Fluid delivering system
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
KR100683441B1 (ko) * 2001-10-15 2007-02-20 마이크론 테크놀로지 인코포레이티드 원자층 증착 장치 및 방법
KR100760291B1 (ko) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
KR100863782B1 (ko) * 2002-03-08 2008-10-16 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
WO2004010482A1 (en) * 2002-07-19 2004-01-29 Axcelis Technologies, Inc. Dual chamber vacuum processing system
CN100458629C (zh) * 2002-11-08 2009-02-04 东京毅力科创株式会社 流体处理装置及流体处理方法
GB0322602D0 (en) * 2003-09-26 2003-10-29 Boc Group Inc Vent-run gas switching systems
US20050145181A1 (en) * 2003-12-31 2005-07-07 Dickinson Colin J. Method and apparatus for high speed atomic layer deposition
JP4553265B2 (ja) * 2007-03-23 2010-09-29 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US20090035946A1 (en) * 2007-07-31 2009-02-05 Asm International N.V. In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
MX2010008012A (es) 2008-01-23 2010-10-04 Deka Products Lp Cassete de bomba y métodos para uso en sistema de tratamiento médico mediante el uso una pluralidad de lineas de fluido.
US11975128B2 (en) 2008-01-23 2024-05-07 Deka Products Limited Partnership Medical treatment system and methods using a plurality of fluid lines
US11833281B2 (en) 2008-01-23 2023-12-05 Deka Products Limited Partnership Pump cassette and methods for use in medical treatment system using a plurality of fluid lines
US20090242046A1 (en) * 2008-03-31 2009-10-01 Benjamin Riordon Valve module
US8383525B2 (en) * 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
MX381117B (es) 2010-07-07 2025-03-12 Deka Products Lp Sistema de tratamiento medico y metodos que utilizan una pluralidad de lineas de fluido
US9188990B2 (en) * 2011-10-05 2015-11-17 Horiba Stec, Co., Ltd. Fluid mechanism, support member constituting fluid mechanism and fluid control system
CN103090187B (zh) * 2011-10-27 2014-12-10 河南省电力勘测设计院 一种安全高效无人值守的电厂高压供氢系统及其实施方法
JP6267491B2 (ja) * 2013-11-08 2018-01-24 株式会社堀場エステック 流体切換装置
EP3151877B1 (en) * 2014-06-05 2020-04-15 DEKA Products Limited Partnership System for calculating a change in fluid volume in a pumping chamber
CN108060410B (zh) * 2017-12-15 2023-08-18 浙江晶盛机电股份有限公司 用于平板式pecvd的进气管道保护结构
MX2020010294A (es) 2018-03-30 2020-10-28 Deka Products Lp Casetes de bombeo de liquido y colector de distribucion de presion asociado y metodos relacionados.
CN108458250B (zh) * 2018-04-16 2024-01-30 谢东波 一种可调节流体流量的联动管及系统
CN110764543B (zh) * 2018-07-26 2023-06-30 中国石油天然气股份有限公司 仪表分析器真空度的保持装置及方法
JP7626381B2 (ja) * 2019-02-28 2025-02-04 株式会社堀場エステック 流量算出システム、流量算出システム用プログラム、流量算出方法、及び、流量算出装置
JP7296854B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 ガス供給方法及び基板処理装置
CN110925598B (zh) * 2019-12-11 2020-10-09 广州广钢气体能源股份有限公司 一种电子气阀门切换系统及切换方法
US12517530B2 (en) 2023-08-21 2026-01-06 Applied Materials, Inc. Fast switching gas circuits and processing chambers, and related methods and apparatus, for gas stabilization

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KR100483434B1 (ko) * 1998-03-04 2005-08-31 삼성전자주식회사 반도체장치제조설비

Also Published As

Publication number Publication date
EP0651432B1 (en) 1999-04-07
DE69417682T2 (de) 2000-01-05
JPH07122498A (ja) 1995-05-12
US5488967A (en) 1996-02-06
JP3332053B2 (ja) 2002-10-07
TW267235B (enExample) 1996-01-01
SG45144A1 (en) 1998-01-16
EP0651432A1 (en) 1995-05-03
CA2134426A1 (en) 1995-04-28
KR950012566A (ko) 1995-05-16
DE69417682D1 (de) 1999-05-12
CA2134426C (en) 1998-03-31

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