JPWO2024122541A5 - - Google Patents

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JPWO2024122541A5
JPWO2024122541A5 JP2024562945A JP2024562945A JPWO2024122541A5 JP WO2024122541 A5 JPWO2024122541 A5 JP WO2024122541A5 JP 2024562945 A JP2024562945 A JP 2024562945A JP 2024562945 A JP2024562945 A JP 2024562945A JP WO2024122541 A5 JPWO2024122541 A5 JP WO2024122541A5
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JP2024562945A
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JP7827170B2 (ja
JPWO2024122541A1 (https=
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Priority claimed from PCT/JP2023/043470 external-priority patent/WO2024122541A1/ja
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Publication of JPWO2024122541A5 publication Critical patent/JPWO2024122541A5/ja
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JP2024562945A 2022-12-08 2023-12-05 半導体装置および半導体装置の製造方法 Active JP7827170B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022196682 2022-12-08
JP2022196682 2022-12-08
PCT/JP2023/043470 WO2024122541A1 (ja) 2022-12-08 2023-12-05 半導体装置および半導体装置の製造方法

Publications (3)

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JPWO2024122541A1 JPWO2024122541A1 (https=) 2024-06-13
JPWO2024122541A5 true JPWO2024122541A5 (https=) 2025-03-10
JP7827170B2 JP7827170B2 (ja) 2026-03-10

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JP2024562945A Active JP7827170B2 (ja) 2022-12-08 2023-12-05 半導体装置および半導体装置の製造方法

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US (1) US20250126863A1 (https=)
JP (1) JP7827170B2 (https=)
CN (1) CN119452752A (https=)
DE (1) DE112023002227T5 (https=)
WO (1) WO2024122541A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4989797B2 (ja) * 2006-03-30 2012-08-01 新電元工業株式会社 Ｉｇｂｔの製造方法
JP5532758B2 (ja) * 2009-08-31 2014-06-25 富士電機株式会社 半導体装置の製造方法および半導体装置
US9887125B2 (en) * 2014-06-06 2018-02-06 Infineon Technologies Ag Method of manufacturing a semiconductor device comprising field stop zone
DE102017118975B4 (de) * 2017-08-18 2023-07-27 Infineon Technologies Ag Halbleitervorrichtung mit einem cz-halbleiterkörper und verfahren zum herstellen einer halbleitervorrichtung mit einem cz-halbleiterkörper
DE102018132236B4 (de) * 2018-12-14 2023-04-27 Infineon Technologies Ag Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
JP7251616B2 (ja) * 2019-04-26 2023-04-04 富士電機株式会社 半導体装置および製造方法
WO2021166980A1 (ja) * 2020-02-18 2021-08-26 富士電機株式会社 半導体装置

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