JPWO2022107727A5 - - Google Patents
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- Publication number
- JPWO2022107727A5 JPWO2022107727A5 JP2022563745A JP2022563745A JPWO2022107727A5 JP WO2022107727 A5 JPWO2022107727 A5 JP WO2022107727A5 JP 2022563745 A JP2022563745 A JP 2022563745A JP 2022563745 A JP2022563745 A JP 2022563745A JP WO2022107727 A5 JPWO2022107727 A5 JP WO2022107727A5
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- low
- peak
- hydrogen
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000001257 hydrogen Substances 0.000 claims description 51
- 229910052739 hydrogen Inorganic materials 0.000 claims description 51
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024005569A JP7722483B2 (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020190971 | 2020-11-17 | ||
| JP2020190971 | 2020-11-17 | ||
| PCT/JP2021/041952 WO2022107727A1 (ja) | 2020-11-17 | 2021-11-15 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024005569A Division JP7722483B2 (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022107727A1 JPWO2022107727A1 (https=) | 2022-05-27 |
| JPWO2022107727A5 true JPWO2022107727A5 (https=) | 2023-01-25 |
| JP7424512B2 JP7424512B2 (ja) | 2024-01-30 |
Family
ID=81708900
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022563745A Active JP7424512B2 (ja) | 2020-11-17 | 2021-11-15 | 半導体装置 |
| JP2024005569A Active JP7722483B2 (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024005569A Active JP7722483B2 (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12543355B2 (https=) |
| JP (2) | JP7424512B2 (https=) |
| CN (1) | CN115443541A (https=) |
| DE (1) | DE112021001364B4 (https=) |
| WO (1) | WO2022107727A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7410900B2 (ja) * | 2021-03-17 | 2024-01-10 | 株式会社東芝 | 半導体装置 |
| JP7796611B2 (ja) * | 2022-08-23 | 2026-01-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、および電力変換装置 |
| DE112023002207T5 (de) * | 2022-12-13 | 2025-03-13 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5104314B2 (ja) | 2005-11-14 | 2012-12-19 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| DE102011113549B4 (de) | 2011-09-15 | 2019-10-17 | Infineon Technologies Ag | Ein Halbleiterbauelement mit einer Feldstoppzone in einem Halbleiterkörper und ein Verfahren zur Herstellung einer Feldstoppzone in einem Halbleiterkörper |
| EP2793266B1 (en) | 2011-12-15 | 2020-11-11 | Fuji Electric Co., Ltd. | Method for manufacturing a semiconductor device |
| EP2913854B1 (en) * | 2012-10-23 | 2020-05-27 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing same |
| CN104969360B (zh) | 2013-03-25 | 2018-04-20 | 富士电机株式会社 | 半导体装置 |
| US10211325B2 (en) | 2014-01-28 | 2019-02-19 | Infineon Technologies Ag | Semiconductor device including undulated profile of net doping in a drift zone |
| US9312135B2 (en) | 2014-03-19 | 2016-04-12 | Infineon Technologies Ag | Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects |
| DE102014116666B4 (de) * | 2014-11-14 | 2022-04-21 | Infineon Technologies Ag | Ein Verfahren zum Bilden eines Halbleiterbauelements |
| DE102015107085B4 (de) | 2015-05-06 | 2025-04-10 | Infineon Technologies Ag | Verfahren zum Herstellen von Halbleitervorrichtungen und sauerstoffkorrelierte thermische Donatoren enthaltende Halbleitervorrichtung |
| CN112490281B (zh) | 2015-06-17 | 2025-02-25 | 富士电机株式会社 | 半导体装置 |
| WO2016204227A1 (ja) | 2015-06-17 | 2016-12-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE102015109661A1 (de) | 2015-06-17 | 2016-12-22 | Infineon Technologies Ag | Verfahren zum Bilden eines Halbleiterbauelements und Halbleiterbauelement |
| DE112016001611B4 (de) | 2015-09-16 | 2022-06-30 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
| JP6937864B2 (ja) * | 2016-12-27 | 2021-09-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP7045005B2 (ja) * | 2017-05-19 | 2022-03-31 | 学校法人東北学院 | 半導体装置 |
| WO2019181852A1 (ja) * | 2018-03-19 | 2019-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE112019001123B4 (de) * | 2018-10-18 | 2024-03-28 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren davon |
| DE112019001738B4 (de) * | 2018-11-16 | 2024-10-10 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren |
| CN112219263B (zh) * | 2018-11-16 | 2024-09-27 | 富士电机株式会社 | 半导体装置及制造方法 |
| DE102018132236B4 (de) | 2018-12-14 | 2023-04-27 | Infineon Technologies Ag | Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung |
| CN118676194A (zh) | 2018-12-28 | 2024-09-20 | 富士电机株式会社 | 半导体装置 |
| JP7243744B2 (ja) * | 2019-01-18 | 2023-03-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6981582B2 (ja) * | 2019-12-17 | 2021-12-15 | 富士電機株式会社 | 半導体装置 |
-
2021
- 2021-11-15 WO PCT/JP2021/041952 patent/WO2022107727A1/ja not_active Ceased
- 2021-11-15 DE DE112021001364.5T patent/DE112021001364B4/de active Active
- 2021-11-15 CN CN202180030568.6A patent/CN115443541A/zh active Pending
- 2021-11-15 JP JP2022563745A patent/JP7424512B2/ja active Active
-
2022
- 2022-10-20 US US17/970,496 patent/US12543355B2/en active Active
-
2024
- 2024-01-17 JP JP2024005569A patent/JP7722483B2/ja active Active
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