JPWO2024122541A1 - - Google Patents

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Publication number
JPWO2024122541A1
JPWO2024122541A1 JP2024562945A JP2024562945A JPWO2024122541A1 JP WO2024122541 A1 JPWO2024122541 A1 JP WO2024122541A1 JP 2024562945 A JP2024562945 A JP 2024562945A JP 2024562945 A JP2024562945 A JP 2024562945A JP WO2024122541 A1 JPWO2024122541 A1 JP WO2024122541A1
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JP
Japan
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JP2024562945A
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Japanese (ja)
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JP7827170B2 (ja
JPWO2024122541A5 (https=
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/161—IGBT having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/417—Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/418—Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the emitter side relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
JP2024562945A 2022-12-08 2023-12-05 半導体装置および半導体装置の製造方法 Active JP7827170B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022196682 2022-12-08
JP2022196682 2022-12-08
PCT/JP2023/043470 WO2024122541A1 (ja) 2022-12-08 2023-12-05 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2024122541A1 true JPWO2024122541A1 (https=) 2024-06-13
JPWO2024122541A5 JPWO2024122541A5 (https=) 2025-03-10
JP7827170B2 JP7827170B2 (ja) 2026-03-10

Family

ID=91379320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024562945A Active JP7827170B2 (ja) 2022-12-08 2023-12-05 半導体装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20250126863A1 (https=)
JP (1) JP7827170B2 (https=)
CN (1) CN119452752A (https=)
DE (1) DE112023002227T5 (https=)
WO (1) WO2024122541A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273647A (ja) * 2006-03-30 2007-10-18 Shindengen Electric Mfg Co Ltd Ｉｇｂｔの製造方法
JP2011054618A (ja) * 2009-08-31 2011-03-17 Fuji Electric Systems Co Ltd 半導体装置の製造方法および半導体装置
CN105280485A (zh) * 2014-06-06 2016-01-27 英飞凌科技股份有限公司 制造包括场停止区的半导体器件的方法
JP2019062189A (ja) * 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
US20200194550A1 (en) * 2018-12-14 2020-06-18 Infineon Technologies Ag Power Semiconductor Device
WO2020217683A1 (ja) * 2019-04-26 2020-10-29 富士電機株式会社 半導体装置および製造方法
WO2021166980A1 (ja) * 2020-02-18 2021-08-26 富士電機株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273647A (ja) * 2006-03-30 2007-10-18 Shindengen Electric Mfg Co Ltd Ｉｇｂｔの製造方法
JP2011054618A (ja) * 2009-08-31 2011-03-17 Fuji Electric Systems Co Ltd 半導体装置の製造方法および半導体装置
CN105280485A (zh) * 2014-06-06 2016-01-27 英飞凌科技股份有限公司 制造包括场停止区的半导体器件的方法
JP2019062189A (ja) * 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
US20200194550A1 (en) * 2018-12-14 2020-06-18 Infineon Technologies Ag Power Semiconductor Device
WO2020217683A1 (ja) * 2019-04-26 2020-10-29 富士電機株式会社 半導体装置および製造方法
WO2021166980A1 (ja) * 2020-02-18 2021-08-26 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JP7827170B2 (ja) 2026-03-10
US20250126863A1 (en) 2025-04-17
CN119452752A (zh) 2025-02-14
DE112023002227T5 (de) 2025-04-03
WO2024122541A1 (ja) 2024-06-13

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