JPWO2024053222A5 - - Google Patents

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Publication number
JPWO2024053222A5
JPWO2024053222A5 JP2024545458A JP2024545458A JPWO2024053222A5 JP WO2024053222 A5 JPWO2024053222 A5 JP WO2024053222A5 JP 2024545458 A JP2024545458 A JP 2024545458A JP 2024545458 A JP2024545458 A JP 2024545458A JP WO2024053222 A5 JPWO2024053222 A5 JP WO2024053222A5
Authority
JP
Japan
Prior art keywords
contact electrode
semiconductor laser
insulating film
ridge
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024545458A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024053222A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/024337 external-priority patent/WO2024053222A1/ja
Publication of JPWO2024053222A1 publication Critical patent/JPWO2024053222A1/ja
Publication of JPWO2024053222A5 publication Critical patent/JPWO2024053222A5/ja
Pending legal-status Critical Current

Links

JP2024545458A 2022-09-08 2023-06-30 Pending JPWO2024053222A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022143000 2022-09-08
PCT/JP2023/024337 WO2024053222A1 (ja) 2022-09-08 2023-06-30 半導体レーザ素子

Publications (2)

Publication Number Publication Date
JPWO2024053222A1 JPWO2024053222A1 (https=) 2024-03-14
JPWO2024053222A5 true JPWO2024053222A5 (https=) 2025-05-21

Family

ID=90192350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024545458A Pending JPWO2024053222A1 (https=) 2022-09-08 2023-06-30

Country Status (3)

Country Link
JP (1) JPWO2024053222A1 (https=)
CN (1) CN119836719A (https=)
WO (1) WO2024053222A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033021A (ja) * 2003-07-04 2005-02-03 Sumitomo Electric Ind Ltd 半導体光素子及びその製造方法
JP2006278661A (ja) * 2005-03-29 2006-10-12 Opnext Japan Inc 光半導体素子及びその製造方法並びに光半導体装置
JP2009177141A (ja) * 2007-12-28 2009-08-06 Mitsubishi Electric Corp 半導体発光素子の製造方法
JP5100407B2 (ja) * 2008-01-17 2012-12-19 シャープ株式会社 半導体発光素子およびそれを用いた半導体発光装置
JP5189136B2 (ja) * 2010-03-23 2013-04-24 Ｎｔｔエレクトロニクス株式会社 リッジ型半導体光素子及びリッジ型半導体光素子の製造方法
JP5292443B2 (ja) * 2011-07-25 2013-09-18 日本オクラロ株式会社 光半導体素子の製造方法

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