JPWO2024053222A1 - - Google Patents
Info
- Publication number
- JPWO2024053222A1 JPWO2024053222A1 JP2024545458A JP2024545458A JPWO2024053222A1 JP WO2024053222 A1 JPWO2024053222 A1 JP WO2024053222A1 JP 2024545458 A JP2024545458 A JP 2024545458A JP 2024545458 A JP2024545458 A JP 2024545458A JP WO2024053222 A1 JPWO2024053222 A1 JP WO2024053222A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022143000 | 2022-09-08 | ||
| PCT/JP2023/024337 WO2024053222A1 (ja) | 2022-09-08 | 2023-06-30 | 半導体レーザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024053222A1 true JPWO2024053222A1 (https=) | 2024-03-14 |
| JPWO2024053222A5 JPWO2024053222A5 (https=) | 2025-05-21 |
Family
ID=90192350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024545458A Pending JPWO2024053222A1 (https=) | 2022-09-08 | 2023-06-30 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2024053222A1 (https=) |
| CN (1) | CN119836719A (https=) |
| WO (1) | WO2024053222A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005033021A (ja) * | 2003-07-04 | 2005-02-03 | Sumitomo Electric Ind Ltd | 半導体光素子及びその製造方法 |
| JP2006278661A (ja) * | 2005-03-29 | 2006-10-12 | Opnext Japan Inc | 光半導体素子及びその製造方法並びに光半導体装置 |
| JP2009177141A (ja) * | 2007-12-28 | 2009-08-06 | Mitsubishi Electric Corp | 半導体発光素子の製造方法 |
| JP5100407B2 (ja) * | 2008-01-17 | 2012-12-19 | シャープ株式会社 | 半導体発光素子およびそれを用いた半導体発光装置 |
| JP5189136B2 (ja) * | 2010-03-23 | 2013-04-24 | Ｎｔｔエレクトロニクス株式会社 | リッジ型半導体光素子及びリッジ型半導体光素子の製造方法 |
| JP5292443B2 (ja) * | 2011-07-25 | 2013-09-18 | 日本オクラロ株式会社 | 光半導体素子の製造方法 |
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2023
- 2023-06-30 JP JP2024545458A patent/JPWO2024053222A1/ja active Pending
- 2023-06-30 CN CN202380063818.5A patent/CN119836719A/zh active Pending
- 2023-06-30 WO PCT/JP2023/024337 patent/WO2024053222A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN119836719A (zh) | 2025-04-15 |
| WO2024053222A1 (ja) | 2024-03-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250117 |