CN119836719A - 半导体激光元件 - Google Patents

半导体激光元件 Download PDF

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Publication number
CN119836719A
CN119836719A CN202380063818.5A CN202380063818A CN119836719A CN 119836719 A CN119836719 A CN 119836719A CN 202380063818 A CN202380063818 A CN 202380063818A CN 119836719 A CN119836719 A CN 119836719A
Authority
CN
China
Prior art keywords
semiconductor laser
contact electrode
insulating film
layer
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380063818.5A
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English (en)
Chinese (zh)
Inventor
村上雄马
光井靖智
西川学
林茂生
井上升
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN119836719A publication Critical patent/CN119836719A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202380063818.5A 2022-09-08 2023-06-30 半导体激光元件 Pending CN119836719A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022143000 2022-09-08
JP2022-143000 2022-09-08
PCT/JP2023/024337 WO2024053222A1 (ja) 2022-09-08 2023-06-30 半導体レーザ素子

Publications (1)

Publication Number Publication Date
CN119836719A true CN119836719A (zh) 2025-04-15

Family

ID=90192350

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380063818.5A Pending CN119836719A (zh) 2022-09-08 2023-06-30 半导体激光元件

Country Status (3)

Country Link
JP (1) JPWO2024053222A1 (https=)
CN (1) CN119836719A (https=)
WO (1) WO2024053222A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033021A (ja) * 2003-07-04 2005-02-03 Sumitomo Electric Ind Ltd 半導体光素子及びその製造方法
JP2006278661A (ja) * 2005-03-29 2006-10-12 Opnext Japan Inc 光半導体素子及びその製造方法並びに光半導体装置
JP2009177141A (ja) * 2007-12-28 2009-08-06 Mitsubishi Electric Corp 半導体発光素子の製造方法
JP5100407B2 (ja) * 2008-01-17 2012-12-19 シャープ株式会社 半導体発光素子およびそれを用いた半導体発光装置
JP5189136B2 (ja) * 2010-03-23 2013-04-24 Ｎｔｔエレクトロニクス株式会社 リッジ型半導体光素子及びリッジ型半導体光素子の製造方法
JP5292443B2 (ja) * 2011-07-25 2013-09-18 日本オクラロ株式会社 光半導体素子の製造方法

Also Published As

Publication number Publication date
JPWO2024053222A1 (https=) 2024-03-14
WO2024053222A1 (ja) 2024-03-14

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