JPWO2024043134A5 - - Google Patents
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- JPWO2024043134A5 JPWO2024043134A5 JP2024542763A JP2024542763A JPWO2024043134A5 JP WO2024043134 A5 JPWO2024043134 A5 JP WO2024043134A5 JP 2024542763 A JP2024542763 A JP 2024542763A JP 2024542763 A JP2024542763 A JP 2024542763A JP WO2024043134 A5 JPWO2024043134 A5 JP WO2024043134A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- raw material
- carrier gas
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022135279 | 2022-08-26 | ||
| PCT/JP2023/029452 WO2024043134A1 (ja) | 2022-08-26 | 2023-08-14 | 成膜方法、成膜装置、サセプター、及びα－酸化ガリウム膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024043134A1 JPWO2024043134A1 (https=) | 2024-02-29 |
| JPWO2024043134A5 true JPWO2024043134A5 (https=) | 2025-04-30 |
Family
ID=90013193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024542763A Pending JPWO2024043134A1 (https=) | 2022-08-26 | 2023-08-14 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20260055504A1 (https=) |
| EP (1) | EP4579715A1 (https=) |
| JP (1) | JPWO2024043134A1 (https=) |
| KR (1) | KR20250057789A (https=) |
| CN (1) | CN119768894A (https=) |
| TW (1) | TW202442926A (https=) |
| WO (1) | WO2024043134A1 (https=) |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4909494B2 (ja) * | 2003-12-26 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体製造装置および半導体装置の製造方法 |
| JP5793732B2 (ja) | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| JP6867637B2 (ja) | 2014-06-27 | 2021-04-28 | 株式会社Flosfia | サセプタ |
| WO2016051559A1 (ja) | 2014-10-01 | 2016-04-07 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
| KR101765682B1 (ko) | 2014-11-03 | 2017-08-23 | 전북대학교산학협력단 | 신규 하이드로젠퍼옥사이드를 활성화하는 항산화 화합물 및 이를 이용한 약학 조성물 |
| JP6478103B2 (ja) | 2015-01-29 | 2019-03-06 | 株式会社Flosfia | 成膜装置および成膜方法 |
| JP7130962B2 (ja) * | 2018-01-11 | 2022-09-06 | 株式会社デンソー | 成膜方法及び成膜装置 |
| JP7105703B2 (ja) * | 2019-01-08 | 2022-07-25 | 信越化学工業株式会社 | 酸化物半導体膜、積層体及び酸化物半導体膜の製造方法 |
| JP7159449B2 (ja) * | 2019-03-28 | 2022-10-24 | 日本碍子株式会社 | 下地基板及びその製造方法 |
| JP6784871B1 (ja) * | 2019-04-24 | 2020-11-11 | 日本碍子株式会社 | 半導体膜 |
| JP7212890B2 (ja) * | 2019-06-05 | 2023-01-26 | 株式会社デンソー | 酸化物膜の成膜方法、半導体装置の製造方法、及び、酸化物膜の成膜装置 |
| JP7045014B2 (ja) * | 2019-08-28 | 2022-03-31 | 信越化学工業株式会社 | 積層構造体の製造方法 |
| JP7170617B2 (ja) * | 2019-10-24 | 2022-11-14 | 信越化学工業株式会社 | ガリウム前駆体の製造方法およびこれを用いた積層体の製造方法 |
| JP6994694B2 (ja) * | 2020-02-27 | 2022-01-14 | 信越化学工業株式会社 | 成膜用霧化装置及びこれを用いた成膜装置 |
| JP7737685B2 (ja) * | 2020-12-12 | 2025-09-11 | 高知県公立大学法人 | Ｇａ２Ｏ３薄膜の製造方法 |
| TWM633935U (zh) * | 2021-04-07 | 2022-11-11 | 日商信越化學工業股份有限公司 | 積層體的製造系統、積層體以及半導體裝置 |
-
2023
- 2023-08-14 CN CN202380061363.3A patent/CN119768894A/zh active Pending
- 2023-08-14 WO PCT/JP2023/029452 patent/WO2024043134A1/ja not_active Ceased
- 2023-08-14 JP JP2024542763A patent/JPWO2024043134A1/ja active Pending
- 2023-08-14 KR KR1020257005527A patent/KR20250057789A/ko active Pending
- 2023-08-14 EP EP23857247.3A patent/EP4579715A1/en active Pending
- 2023-08-14 US US19/102,895 patent/US20260055504A1/en active Pending
- 2023-08-23 TW TW112131627A patent/TW202442926A/zh unknown
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