JPWO2023282000A5 - - Google Patents

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Publication number
JPWO2023282000A5
JPWO2023282000A5 JP2023533489A JP2023533489A JPWO2023282000A5 JP WO2023282000 A5 JPWO2023282000 A5 JP WO2023282000A5 JP 2023533489 A JP2023533489 A JP 2023533489A JP 2023533489 A JP2023533489 A JP 2023533489A JP WO2023282000 A5 JPWO2023282000 A5 JP WO2023282000A5
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JP
Japan
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section
main surface
areal density
silicon carbide
cross
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Pending
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JP2023533489A
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English (en)
Japanese (ja)
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JPWO2023282000A1 (https=
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Priority claimed from PCT/JP2022/023982 external-priority patent/WO2023282000A1/ja
Publication of JPWO2023282000A1 publication Critical patent/JPWO2023282000A1/ja
Publication of JPWO2023282000A5 publication Critical patent/JPWO2023282000A5/ja
Pending legal-status Critical Current

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JP2023533489A 2021-07-08 2022-06-15 Pending JPWO2023282000A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021113365 2021-07-08
PCT/JP2022/023982 WO2023282000A1 (ja) 2021-07-08 2022-06-15 炭化珪素単結晶および炭化珪素基板

Publications (2)

Publication Number Publication Date
JPWO2023282000A1 JPWO2023282000A1 (https=) 2023-01-12
JPWO2023282000A5 true JPWO2023282000A5 (https=) 2024-04-05

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ID=84801471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023533489A Pending JPWO2023282000A1 (https=) 2021-07-08 2022-06-15

Country Status (3)

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US (1) US12227876B2 (https=)
JP (1) JPWO2023282000A1 (https=)
WO (1) WO2023282000A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025134535A1 (ja) * 2023-12-19 2025-06-26 住友電気工業株式会社 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法、および炭化珪素半導体装置の製造方法
CN118516765A (zh) * 2024-04-29 2024-08-20 山东天岳先进科技股份有限公司 一种n型碳化硅衬底及碳化硅晶体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4110611B2 (ja) * 1998-03-12 2008-07-02 株式会社デンソー 単結晶製造装置
JP4924105B2 (ja) * 2007-03-06 2012-04-25 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
EP2752508A4 (en) 2011-08-29 2015-02-25 Nippon Steel & Sumitomo Metal Corp SILICON CARBIDE CRYSTAL WAFERS AND MANUFACTURING METHOD THEREFOR
JP6883409B2 (ja) * 2016-11-22 2021-06-09 昭和電工株式会社 ＳｉＣ単結晶成長方法、ＳｉＣ単結晶成長装置及びＳｉＣ単結晶インゴット

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