JPWO2023282000A1 - - Google Patents
Info
- Publication number
- JPWO2023282000A1 JPWO2023282000A1 JP2023533489A JP2023533489A JPWO2023282000A1 JP WO2023282000 A1 JPWO2023282000 A1 JP WO2023282000A1 JP 2023533489 A JP2023533489 A JP 2023533489A JP 2023533489 A JP2023533489 A JP 2023533489A JP WO2023282000 A1 JPWO2023282000 A1 JP WO2023282000A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021113365 | 2021-07-08 | ||
| PCT/JP2022/023982 WO2023282000A1 (ja) | 2021-07-08 | 2022-06-15 | 炭化珪素単結晶および炭化珪素基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023282000A1 true JPWO2023282000A1 (https=) | 2023-01-12 |
| JPWO2023282000A5 JPWO2023282000A5 (https=) | 2024-04-05 |
Family
ID=84801471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023533489A Pending JPWO2023282000A1 (https=) | 2021-07-08 | 2022-06-15 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12227876B2 (https=) |
| JP (1) | JPWO2023282000A1 (https=) |
| WO (1) | WO2023282000A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025134535A1 (ja) * | 2023-12-19 | 2025-06-26 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法、および炭化珪素半導体装置の製造方法 |
| CN118516765A (zh) * | 2024-04-29 | 2024-08-20 | 山东天岳先进科技股份有限公司 | 一种n型碳化硅衬底及碳化硅晶体 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4110611B2 (ja) * | 1998-03-12 | 2008-07-02 | 株式会社デンソー | 単結晶製造装置 |
| JP4924105B2 (ja) * | 2007-03-06 | 2012-04-25 | 株式会社デンソー | 炭化珪素単結晶の製造装置および製造方法 |
| EP2752508A4 (en) | 2011-08-29 | 2015-02-25 | Nippon Steel & Sumitomo Metal Corp | SILICON CARBIDE CRYSTAL WAFERS AND MANUFACTURING METHOD THEREFOR |
| JP6883409B2 (ja) * | 2016-11-22 | 2021-06-09 | 昭和電工株式会社 | ＳｉＣ単結晶成長方法、ＳｉＣ単結晶成長装置及びＳｉＣ単結晶インゴット |
-
2022
- 2022-06-15 WO PCT/JP2022/023982 patent/WO2023282000A1/ja not_active Ceased
- 2022-06-15 US US18/575,557 patent/US12227876B2/en active Active
- 2022-06-15 JP JP2023533489A patent/JPWO2023282000A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023282000A1 (ja) | 2023-01-12 |
| US12227876B2 (en) | 2025-02-18 |
| US20240309555A1 (en) | 2024-09-19 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231219 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250609 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20260325 |