JPWO2023233766A5 - - Google Patents
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- Publication number
- JPWO2023233766A5 JPWO2023233766A5 JP2024524187A JP2024524187A JPWO2023233766A5 JP WO2023233766 A5 JPWO2023233766 A5 JP WO2023233766A5 JP 2024524187 A JP2024524187 A JP 2024524187A JP 2024524187 A JP2024524187 A JP 2024524187A JP WO2023233766 A5 JPWO2023233766 A5 JP WO2023233766A5
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- barrier layer
- layer
- forming
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000002131 composite material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910002601 GaN Inorganic materials 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022087382 | 2022-05-30 | ||
| PCT/JP2023/010900 WO2023233766A1 (ja) | 2022-05-30 | 2023-03-20 | 半導体装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023233766A1 JPWO2023233766A1 (https=) | 2023-12-07 |
| JPWO2023233766A5 true JPWO2023233766A5 (https=) | 2024-09-05 |
Family
ID=89026057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024524187A Pending JPWO2023233766A1 (https=) | 2022-05-30 | 2023-03-20 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250359126A1 (https=) |
| JP (1) | JPWO2023233766A1 (https=) |
| CN (1) | CN119213571A (https=) |
| WO (1) | WO2023233766A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2926897B2 (ja) * | 1990-05-30 | 1999-07-28 | ソニー株式会社 | 半導体装置の製造方法 |
| JPH09326370A (ja) * | 1996-06-05 | 1997-12-16 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP4606552B2 (ja) * | 2000-06-27 | 2011-01-05 | 富士通株式会社 | 半導体装置 |
| JP2013004747A (ja) * | 2011-06-16 | 2013-01-07 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP6524888B2 (ja) * | 2015-10-30 | 2019-06-05 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP6953886B2 (ja) * | 2017-08-10 | 2021-10-27 | 富士通株式会社 | 半導体装置、電源装置、増幅器及び半導体装置の製造方法 |
| US20220157980A1 (en) * | 2019-03-20 | 2022-05-19 | Panasonic Corporation | Nitride semiconductor device |
| WO2021024502A1 (ja) * | 2019-08-06 | 2021-02-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP7571390B2 (ja) * | 2020-05-07 | 2024-10-23 | 富士通株式会社 | 半導体装置 |
-
2023
- 2023-03-20 CN CN202380041010.7A patent/CN119213571A/zh active Pending
- 2023-03-20 WO PCT/JP2023/010900 patent/WO2023233766A1/ja not_active Ceased
- 2023-03-20 US US18/868,177 patent/US20250359126A1/en active Pending
- 2023-03-20 JP JP2024524187A patent/JPWO2023233766A1/ja active Pending
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