JPWO2023218809A5 - - Google Patents

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Publication number
JPWO2023218809A5
JPWO2023218809A5 JP2024520296A JP2024520296A JPWO2023218809A5 JP WO2023218809 A5 JPWO2023218809 A5 JP WO2023218809A5 JP 2024520296 A JP2024520296 A JP 2024520296A JP 2024520296 A JP2024520296 A JP 2024520296A JP WO2023218809 A5 JPWO2023218809 A5 JP WO2023218809A5
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JP
Japan
Prior art keywords
silicon carbide
carbide substrate
less
substrate according
areal density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024520296A
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English (en)
Japanese (ja)
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JPWO2023218809A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/014085 external-priority patent/WO2023218809A1/ja
Publication of JPWO2023218809A1 publication Critical patent/JPWO2023218809A1/ja
Publication of JPWO2023218809A5 publication Critical patent/JPWO2023218809A5/ja
Pending legal-status Critical Current

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JP2024520296A 2022-05-11 2023-04-05 Pending JPWO2023218809A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022078328 2022-05-11
PCT/JP2023/014085 WO2023218809A1 (ja) 2022-05-11 2023-04-05 炭化珪素基板、炭化珪素エピタキシャル基板、炭化珪素基板の製造方法および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2023218809A1 JPWO2023218809A1 (https=) 2023-11-16
JPWO2023218809A5 true JPWO2023218809A5 (https=) 2025-01-22

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ID=88730044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024520296A Pending JPWO2023218809A1 (https=) 2022-05-11 2023-04-05

Country Status (2)

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JP (1) JPWO2023218809A1 (https=)
WO (1) WO2023218809A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103782370A (zh) * 2011-09-05 2014-05-07 旭硝子株式会社 研磨剂及研磨方法
JPWO2013088928A1 (ja) * 2011-12-14 2015-04-27 旭硝子株式会社 洗浄剤、および炭化ケイ素単結晶基板の製造方法
JP6493690B2 (ja) * 2016-08-31 2019-04-03 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法
JP7135531B2 (ja) * 2018-07-20 2022-09-13 株式会社デンソー 炭化珪素半導体装置の製造方法
WO2020235205A1 (ja) * 2019-05-17 2020-11-26 住友電気工業株式会社 炭化珪素基板

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