JPWO2023189491A5 - - Google Patents

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Publication number
JPWO2023189491A5
JPWO2023189491A5 JP2024511699A JP2024511699A JPWO2023189491A5 JP WO2023189491 A5 JPWO2023189491 A5 JP WO2023189491A5 JP 2024511699 A JP2024511699 A JP 2024511699A JP 2024511699 A JP2024511699 A JP 2024511699A JP WO2023189491 A5 JPWO2023189491 A5 JP WO2023189491A5
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JP
Japan
Prior art keywords
layer
metal oxide
semiconductor device
oxide layer
secondary ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511699A
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English (en)
Japanese (ja)
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JPWO2023189491A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/009646 external-priority patent/WO2023189491A1/ja
Publication of JPWO2023189491A1 publication Critical patent/JPWO2023189491A1/ja
Publication of JPWO2023189491A5 publication Critical patent/JPWO2023189491A5/ja
Pending legal-status Critical Current

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JP2024511699A 2022-03-30 2023-03-13 Pending JPWO2023189491A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022057459 2022-03-30
PCT/JP2023/009646 WO2023189491A1 (ja) 2022-03-30 2023-03-13 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023189491A1 JPWO2023189491A1 (https=) 2023-10-05
JPWO2023189491A5 true JPWO2023189491A5 (https=) 2026-03-17

Family

ID=88200908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511699A Pending JPWO2023189491A1 (https=) 2022-03-30 2023-03-13

Country Status (4)

Country Link
US (1) US20250022966A1 (https=)
JP (1) JPWO2023189491A1 (https=)
CN (1) CN118872073A (https=)
WO (1) WO2023189491A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299614A (ja) * 2001-03-30 2002-10-11 Toshiba Corp Ｍｉｓ型電界効果トランジスタ及びその製造方法及び半導体記憶装置及びその製造方法
JP2002299613A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 縦型電界効果トランジスタ及び半導体装置の製造方法
US8552425B2 (en) * 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162104A1 (en) * 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6053490B2 (ja) * 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10700212B2 (en) * 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

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