CN118872073A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN118872073A
CN118872073A CN202380021604.1A CN202380021604A CN118872073A CN 118872073 A CN118872073 A CN 118872073A CN 202380021604 A CN202380021604 A CN 202380021604A CN 118872073 A CN118872073 A CN 118872073A
Authority
CN
China
Prior art keywords
layer
oxide semiconductor
semiconductor layer
oxide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380021604.1A
Other languages
English (en)
Chinese (zh)
Inventor
渡壁创
津吹将志
佐佐木俊成
田丸尊也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Publication of CN118872073A publication Critical patent/CN118872073A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
CN202380021604.1A 2022-03-30 2023-03-13 半导体装置 Pending CN118872073A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-057459 2022-03-30
JP2022057459 2022-03-30
PCT/JP2023/009646 WO2023189491A1 (ja) 2022-03-30 2023-03-13 半導体装置

Publications (1)

Publication Number Publication Date
CN118872073A true CN118872073A (zh) 2024-10-29

Family

ID=88200908

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380021604.1A Pending CN118872073A (zh) 2022-03-30 2023-03-13 半导体装置

Country Status (4)

Country Link
US (1) US20250022966A1 (https=)
JP (1) JPWO2023189491A1 (https=)
CN (1) CN118872073A (https=)
WO (1) WO2023189491A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299614A (ja) * 2001-03-30 2002-10-11 Toshiba Corp Ｍｉｓ型電界効果トランジスタ及びその製造方法及び半導体記憶装置及びその製造方法
JP2002299613A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 縦型電界効果トランジスタ及び半導体装置の製造方法
US8552425B2 (en) * 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162104A1 (en) * 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6053490B2 (ja) * 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10700212B2 (en) * 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

Also Published As

Publication number Publication date
US20250022966A1 (en) 2025-01-16
JPWO2023189491A1 (https=) 2023-10-05
WO2023189491A1 (ja) 2023-10-05

Similar Documents

Publication Publication Date Title
KR20240164399A (ko) 반도체 장치
CN118872073A (zh) 半导体装置
KR102874155B1 (ko) 반도체 장치의 제조 방법
KR102870475B1 (ko) 반도체 장치
KR102947178B1 (ko) 반도체 장치
US20250015189A1 (en) Semiconductor device
CN118661268A (zh) 半导体装置
US12610624B2 (en) Method for manufacturing semiconductor device
KR102733354B1 (ko) 반도체 장치의 제조 방법
CN118715618A (zh) 半导体装置
KR102955752B1 (ko) 반도체 장치 및 그 제조 방법
KR102898869B1 (ko) 반도체 장치
CN118872076A (zh) 半导体装置及半导体装置的制造方法
CN118891736A (zh) 半导体装置
CN120753018A (zh) 半导体装置
JPWO2023189487A5 (https=)
KR20250047631A (ko) 반도체 장치 및 그 제조 방법
CN117410316A (zh) 半导体器件

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20250626

Address after: Tokyo, Japan

Applicant after: JAPAN DISPLAY Inc.

Country or region after: Japan

Applicant after: IDEMITSU KOSAN Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: JAPAN DISPLAY Inc.

Country or region before: Japan