JPWO2023170751A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2023170751A5 JPWO2023170751A5 JP2022550241A JP2022550241A JPWO2023170751A5 JP WO2023170751 A5 JPWO2023170751 A5 JP WO2023170751A5 JP 2022550241 A JP2022550241 A JP 2022550241A JP 2022550241 A JP2022550241 A JP 2022550241A JP WO2023170751 A5 JPWO2023170751 A5 JP WO2023170751A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- modified layer
- substrate
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/009757 WO2023170751A1 (ja) | 2022-03-07 | 2022-03-07 | 半導体装置の製造方法および半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023170751A1 JPWO2023170751A1 (https=) | 2023-09-14 |
| JPWO2023170751A5 true JPWO2023170751A5 (https=) | 2024-02-14 |
Family
ID=87936363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022550241A Pending JPWO2023170751A1 (https=) | 2022-03-07 | 2022-03-07 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023170751A1 (https=) |
| WO (1) | WO2023170751A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6376351A (ja) * | 1986-09-18 | 1988-04-06 | Nec Corp | 多層配線の形成方法 |
| US6166439A (en) * | 1997-12-30 | 2000-12-26 | Advanced Micro Devices, Inc. | Low dielectric constant material and method of application to isolate conductive lines |
| JP4016884B2 (ja) * | 2003-05-27 | 2007-12-05 | セイコーエプソン株式会社 | 電気光学パネルの製造方法、電気光学パネルの製造プログラム及び電気光学パネルの製造装置、並びに電子機器の製造方法 |
| JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2008300480A (ja) * | 2007-05-30 | 2008-12-11 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ、有機薄膜トランジスタシート及び有機薄膜トランジスタの製造方法 |
| JPWO2009044659A1 (ja) * | 2007-10-05 | 2011-02-03 | コニカミノルタホールディングス株式会社 | パターン形成方法 |
-
2022
- 2022-03-07 JP JP2022550241A patent/JPWO2023170751A1/ja active Pending
- 2022-03-07 WO PCT/JP2022/009757 patent/WO2023170751A1/ja not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7705431B1 (en) | Method of improving adhesion between two dielectric films | |
| JP2017501591A5 (https=) | ||
| CN1135607C (zh) | 半导体装置的制造方法 | |
| US20080191310A1 (en) | By-product removal for wafer bonding process | |
| JP2006344703A5 (https=) | ||
| JP2023531986A5 (https=) | ||
| JP2518435B2 (ja) | 多層配線形成法 | |
| CN110323181A (zh) | 一种半导体器件的制造方法 | |
| JP2003297918A5 (https=) | ||
| CN109036134A (zh) | 柔性显示基板及其制作方法、显示装置 | |
| CN1208832C (zh) | 半导体器件及其制造方法 | |
| JPWO2023170751A5 (https=) | ||
| CN104319260A (zh) | 铜互连线间空气隙的形成方法 | |
| JP3149739B2 (ja) | 多層配線形成法 | |
| CN102420148A (zh) | 一种基于聚酰亚胺基体的铝垫制备工艺 | |
| JPH06291202A (ja) | 半導体装置の製造方法 | |
| TWI659501B (zh) | 記憶體裝置及其製造方法 | |
| JP4068190B2 (ja) | 半導体装置の多層配線形成方法 | |
| CN104124150A (zh) | 半导体器件的形成方法 | |
| CN110148624A (zh) | 半导体器件及其形成方法 | |
| CN1205654C (zh) | 一种修复低介电常数材料层的方法 | |
| CN112086399A (zh) | 半导体结构及制备方法 | |
| US20240128084A1 (en) | Semiconductor device structure with patterns having coplanar bottom surfaces and method for preparing the same | |
| TW567581B (en) | A method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper | |
| JPS61289649A (ja) | 半導体装置の製造方法 |