JPWO2023157452A5 - - Google Patents
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- Publication number
- JPWO2023157452A5 JPWO2023157452A5 JP2024500984A JP2024500984A JPWO2023157452A5 JP WO2023157452 A5 JPWO2023157452 A5 JP WO2023157452A5 JP 2024500984 A JP2024500984 A JP 2024500984A JP 2024500984 A JP2024500984 A JP 2024500984A JP WO2023157452 A5 JPWO2023157452 A5 JP WO2023157452A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- field plate
- layer
- nitride semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022022919 | 2022-02-17 | ||
| PCT/JP2022/046702 WO2023157452A1 (ja) | 2022-02-17 | 2022-12-19 | 窒化物半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023157452A1 JPWO2023157452A1 (https=) | 2023-08-24 |
| JPWO2023157452A5 true JPWO2023157452A5 (https=) | 2024-10-23 |
Family
ID=87578042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024500984A Pending JPWO2023157452A1 (https=) | 2022-02-17 | 2022-12-19 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240405117A1 (https=) |
| JP (1) | JPWO2023157452A1 (https=) |
| CN (1) | CN118696416A (https=) |
| DE (1) | DE112022006355T5 (https=) |
| WO (1) | WO2023157452A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6014984B2 (ja) * | 2011-09-29 | 2016-10-26 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JP2013157407A (ja) * | 2012-01-27 | 2013-08-15 | Fujitsu Semiconductor Ltd | 化合物半導体装置及びその製造方法 |
| JP2016139718A (ja) * | 2015-01-28 | 2016-08-04 | 株式会社東芝 | 半導体装置 |
| JP7095982B2 (ja) * | 2017-12-07 | 2022-07-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
| US12550356B2 (en) * | 2019-04-15 | 2026-02-10 | Rohm Co. Ltd. | Nitride semiconductor device and method for manufacturing same |
| CN110071173B (zh) * | 2019-04-30 | 2023-04-18 | 英诺赛科（珠海）科技有限公司 | 半导体装置及其制造方法 |
| US12501644B2 (en) * | 2020-07-31 | 2025-12-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gallium nitride-based device with step-wise field plate and method making the same |
-
2022
- 2022-12-19 DE DE112022006355.6T patent/DE112022006355T5/de active Pending
- 2022-12-19 JP JP2024500984A patent/JPWO2023157452A1/ja active Pending
- 2022-12-19 CN CN202280091589.3A patent/CN118696416A/zh active Pending
- 2022-12-19 WO PCT/JP2022/046702 patent/WO2023157452A1/ja not_active Ceased
-
2024
- 2024-08-09 US US18/798,932 patent/US20240405117A1/en active Pending
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